SSF6014D 60V N-Channel MOSFET
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- Barnaby Stephens
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1 Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology Ideal for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 C operating temperature Description The SSF6014D utilizes the latest processing techniques to achieve high cell density, low onresistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in power switching applications and a wide variety of other applications. Absolute Maximum Rating Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V1 60 I T C = 100 C Continuous Drain Current, V 10V1 42 A I DM Pulsed Drain Current2 240 P C = 25 C Power Dissipation3 115 W Linear Derating Factor 0.74 W/ C V DS Drain-Source Voltage 60 V V GS Gate-to-Source Voltage ± 20 V E AS Single Pulse Avalanche L=0.3mH 235 mj I AS Avalanche L=0.3mH 39 A T J,T STG Operating Junction and Storage Temperature Range -55 to C 1/7
2 Thermal Resistance SSF6014D Symbol Characteristics Typ. Max. Units R θjc Junction-to-Case C/W R θja Junction-to-Ambient 4 62 C/W Electrical Characteristics (T A =25 C unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 60 V V GS = 0V, I D = 250μA R DS(on) Static Drain-to-Source On-resistance mω V GS =10V,I D = 30A V GS(th) I DSS I GSS Gate Threshold Voltage V DS = V GS, I D = 250μA V 2.0 T J = 125 C Drain-to-Source Leakage Current 2 V DS = 60V,V GS = 0V μa 10 T J = 150 C Gate-to-Source Forward Leakage 100 V GS =20V na -100 V GS = -20V Q g Total Gate Charge 45 I D = 30A, Q gs Gate-to-Source Charge 4 nc V DS =30V, Q gd Gate-to-Drain("Miller") Charge 15 V GS = 10V t d(on) Turn-on Delay Time 14.6 V GS =10V, V DS =30V, t r Rise Time 14.2 ns R L =15Ω, t d(off) Turn-Off Delay Time 40 R GEN =2.5Ω t f Fall TIme 7.3 C iss Input Capacitance 1480 V GS = 0V C oss Output Capacitance 190 pf V DS = 25V C rss Reverse Transfer Capacitance 135 ƒ = 1MHz Source-Drain Ratings and Characteristics I S I SM Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol 60 A (Body Diode) showing the Pulsed Source Current integral reverse 240 A (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.3 V I S =30A, V GS =0V t rr Reverse Recovery Time 33 ns T J = 25 C, I F =60A, Q rr Reverse Recovery Charge 61 nc di/dt = 100A/μs 2/7
3 Test Circuits and Waveforms E AS Test Circuit Gate Charge Test Circuit Switching Time Test Circuit Switching Waveforms Notes 1The maximum current rating is limited by bond-wires. 2Repetitive rating; pulse width limited by max. junction temperature. 3The power dissipation P D is based on max. junction temperature, using junction-to-case thermal resistance. 4The value of R θja is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25 C 3/7
4 Typical Electrical and Thermal Characteristics ID- Drain Source Current (A) V DS Drain to Source Voltage (V) Figure 1. Transfer Characteristic Figure 2. Capacitance vs Drain to Source Voltage Figure 3. On Resistance vs. Junction Temperature Figure 4. Breakdown Voltage vs. Junction Temperature 4/7
5 Figure 5.Gate to Source Voltage vs Gate Charge Figure 6. Source-Drain Diode Forward Voltage ID- Drain Current (A) Figure 7. Safe Operation Area Figure 8. Max Drain Current vs. Junction Temperature Figure 9. Transient Thermal Impedance Curve 5/7
6 Mechanical Data SSF6014D TO252/DPAK PACKAGE OUTLINE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min Nom Max Min Nom Max A A B B C D D1 D2 E (REF) (REF) (REF) (REF) E (REF) (REF) e H F K V (REF) 8 0 (REF) (REF) 8 0 (REF) 6/7
7 Ordering and Marking Information Device Marking: SSF6014D Package (Available) DPAK Operating Temperature Range C : -55 to 175 ºC Devices per Unit Option 1 Package Type Tube Tubes/ Inner Boxes/ TO Option 2 Package Type Tape Tapes/ Inner Boxes/ TO Option 3 Package Type Tape Tapes/ Inner Boxes/ TO Reliability Test Program Test Item Conditions Duration Sample Size High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) T j =125 C to % of Max V DSS /V CES /V R T j =150 C or % of Max V GSS 168 hours 500 hours 1000 hours 168 hours 500 hours 1000 hours 3 lots x 77 devices 3 lots x 77 devices 7/7 Doc.USSSF6014Dx2.2
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