CMT9435G P-CHANNEL ENHANCEMENT MODE MOSFET

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1 GENERAL DESCRIPTION FEATURES V DS =-30V, ID=-5.3A Advanced trench process technology R DS(ON), V I -5.3A = 60mΩ High Density Cell Design For Ultra Low On-Resistance R DS(ON), V I -4.2A = 90mΩ Fully Characterized Avalanche Voltage and Current Improved Shoot Through FOM APPLICATIONS Power Management in Notebook Portable Equipment Battery Powered System DC/DC Converter Load Switch DSC LCD Display inverter PIN CONFIGURATION SYMBOL 8-PIN SOP (S08) Top View P-Channel MOSFET ORDERING INFORMATION Part Number Package SOP-8 *Note: G : Suffix for Pb Free Product 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 1

2 ABSOLUTE MAXIMUM RATINGS (TA=25 unless otherwise noted) Rating Symbol Value Unit Drain-Source Voltage V DS -30 V Gate-Source Voltage V GS ±20 V Continuous Drain Current I D -5.3 A Pulsed Drain Current I DM -20 A Maximum Power Dissipation T A = P D T A =75 W Operating Junction Temperature Range T J -55 to150 Storage Temperature Range T STG -55 to 150 Junction-to-Ambient Thermal Resistance (PCB mount) R qja 50 /W Junction-to-Case Thermal Resistance R qjc 30 /W Note : 1. Repetitive Rating : Pulse width limited by the Maximum junction temperation 2. 1-in 2 2oz Cu PCB board 3. Guaranteed by design ; not subject to production testing 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 2

3 ELECTRICAL CHARACTERISTICS Unless otherwise specified, T J = 25. C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units Static BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA V RDS(ON) Drain-Source On-State Resistance VGS=-10V, ID=-5.3A mω RDS(ON) Drain-Source On-State Resistance VGS=-4.5V, ID=-4.2A mω V GS(th) Gate Threshold Voltage V DS =V GS, I D =-250uA V g fs Forward Transconductance V DS =10V, I D =6A S I DSS Zero Gate Voltage Drain Current V DS =-24V, V GS =0V ua I GSS Gate-Body Leakage V GS =±20V, V DS =0V - - ±100 na Dynamic Q g Total Gate Charge I D =-5.3A nc Q gs Gate-Source Charge V DS =-15V nc Q gd Gate-Drain Charge V GS =-10V nc t d(on) Turn-On Delay Time V DD =-15V ns t r Turn-On Rise Time I D =-1A ns t d(off) Turn-Off Delay Time R G =6Ω,V GEN =-10V ns t f Turn-Off Fall Time R L =15Ω ns C iss Input Capacitance V GS =0V pf C oss Output Capacitance V DS =-15V pf C rss Reverse Transfer Capacitance f=1.0mhz pf Source-Drain Diode Is Max. Diode Forward Current A V SD Diode Forward Voltage I S =-5.3A, V GS =0V, V Notes: 1.Pulse test : Pulse width <300us, duty cycle <2%. 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 3

4 TYPICAL CHARACTERISTICS 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 4

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6 PACKAGE DIMENSION 8-PIN SOP (S08) 2007/02/05 Rev1.0 Champion Microelectronic Corporation Page 6

7 IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan 7F-6, No.32, Sec. 1, Chenggong Rd., Nangang District, Taipei City 115, Taiwan T E L : T E L : FAX: FAX: /02/05 Rev1.0 Champion Microelectronic Corporation Page 7