3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range

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1 DS = 30 R DS(ON), I = 38mΩ R DS(ON), I = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability SOT-23 N - Channel 3 Simple Drive Requirement Small Package Outline Surface Mount Device 1 2 Ordering Information Device Marking Shipping N /Tape&Reel Maximum Ratings and Thermal Characteristics (T A = 25 o C unless otherwise noted) Symbol Parameter Limit Unit DS Drain-Source oltage 30 GS Gate-Source oltage ± 20 I D Continuous Drain Current 6.9 I Pulsed Drain Current 1) DM 30 TA = 25 o C 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range -55 to 150 o C R θjc Junction-to-Case Thermal Resistance 24 R Junction-to-Ambient Thermal Resistance (PCB mounted) 2) θja 62.5 Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in 2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing A W o C/W

2 ELECTRICAL CHARACTERISTICS Symbol Parameter Test Condition Min Typ Max Unit Static B DSS Drain-Source Breakdown oltage GS = 0, I D = 250uA 30 R DS(on) Drain-Source On-State Resistance GS = 4.5, I D = 5A R DS(on) Drain-Source On-State Resistance GS = 10, I D = 8.5A GS(th) Gate Threshold oltage DS = GS, I D = 250uA I DSS Zero Gate oltage Drain Current DS = 24, GS = 0 1 ua I GSS Gate Body Leakage GS = ± 20, DS = na g fs Forward Transconductance DS = 5, I D = 6.9A 15.4 S mω Dynamic 3) Q g Total Gate Charge DS = 15, I D = 8.5A Q gs Gate-Source Charge 4.2 GS = 10 Q gd Gate-Drain Charge 3.1 t d(on) Turn-On Delay Time 9 t r Turn-On Rise Time DD = 15, R L = 15Ω I D = 1A, GEN = t d(off) Turn-Off Delay Time R G = 6Ω 30 t f Turn-Off Fall Time 5 C iss Input Capacitance 610 C oss Output Capacitance DS = 15, GS = 0 f = 1.0 MHz 100 C rss Reverse Transfer Capacitance 77 Source-Drain Diode I S Max. Diode Forward Current 3 A SD Diode Forward oltage I S = 1A, GS = Note: Pulse test: pulse width <= 300us, duty cycle<= 2% nc ns pf

3 TYPICAL ELECTRICAL CHARACTERISTICS Id DRAIN CURRENT(A) Id, DRAIN CURRENT(A) gs, GATE-TO-SOURCE OLTAGE() ds,drain-to-source OLTAGE() Figure 1. Transfer Characteristics Figure 2. On Region Characteristics Rds(on)-On-Resistance(Ω) Id-Drain Current(A) Rds(on)-On-Resistance(Ω) Id=5A gs-gate-to-source oltage() Figure 3. On Resistance versus Drain Current Figure 4. On-Resistance vs. Gate-to-Source oltage

4 SOT (1.60).047(1.20).122(3.10).106(2.70).006(0.15)MIN..110(2.80).086(2.10).080(2.04).070(1.78).008(0.20).003(0.08).004(0.10)MAX..020(0.50).012(0.30).055(1.40).035(0.89) Dimensions in inches and (millimeters) inches mm

5 Ordering Information: Device PN Packing G (1) WS Tape&Reel: 3 Kpcs/Reel Note: (1) RoHS product for packing code suffix G ;Halogen free product for packing code suffix H ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. WILLAS products are not designed, intended or authorized for use in medical, life saving implant or other applications intended for life sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures.

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