N-Channel Super Junction Power MOSFET

Transcription

1 RM21N650T7 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry s AC-DC SMPS requirements for PFC, AC/DC power V jmax 650 V R DS(ON) MAX 180 mω I D 21 A conversion, and industrial power applications. Features New technology for high voltage device Low on-resistance and low conduction losses Small package Ultra Low Gate Charge cause lower driving requirements 100% Avalanche Tested ROHS compliant Application Power factor correctionpfc Switched mode power supplies(smps) Uninterruptible Power SupplyUPS Schematic diagram Package Marking And Ordering Information Device Device Package Marking RM21N650T7 TO N650 Table 1. Absolute Maximum Ratings (T C =25) Parameter Symbol RM21N650T7 Unit Drain-Source Voltage (VGS=0V VDS 650 V Gate-Source Voltage (VDS=0V) VGS 30 V Continuous Drain Current at Tc=25 C I D (DC) 21 A Continuous Drain Current at Tc=100 C I D (DC) 13.2 A Pulsed drain current (Note 1) I DM (pluse) 63 A Maximum Power Dissipation(Tc=25) Derate above 25 C P D Single pulse avalanche energy (Note 2) EAS 690 mj Avalanche current (Note 1) I AR 7 A Repetitive Avalanche energy t AR limited by T jmax (Note 1) E AR 1 mj W W/ C REV:O15

2 Parameter Symbol RM21N650T7 Unit Drain Source voltage slope, V DS 480 V, dv/dt 50 V/ns Reverse diode dv/dtv DS 480 V,I SD <I D dv/dt 15 V/ns Operating Junction and Storage Temperature Range T J,T STG C * limited by maximum junction temperature Table 2. Thermal Characteristic Parameter Symbol RM21N650T7 Unit Thermal ResistanceJunction-to-CaseMaximum R thjc 0.62 C /W Thermal ResistanceJunction-to-Ambient Maximum R thja 62.5 C /W Table 3. Electrical Characteristics (TA=25unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit On/off states Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250μA 600 V Zero Gate Voltage Drain Current(Tc=25) I DSS V DS =600V,V GS =0V μa Zero Gate Voltage Drain Current(Tc=125) I DSS V DS =600V,V GS =0V 100 μa Gate-Body Leakage Current I GSS V GS =±30V,V DS =0V ±100 na Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =10.5A mω Dynamic Characteristics Forward Transconductance g FS V DS = 20V, I D = 10.5A 17.5 S Input Capacitance C lss 1950 PF V DS =50V,V GS =0V, Output Capacitance C oss 150 PF F=1.0MHz Reverse Transfer Capacitance 5 PF C rss Total Gate Charge Q g V DS =480V,I D =21A, nc Gate-Source Charge Q gs V GS =10V 9 nc Gate-Drain Charge 18 nc Q gd Intrinsic gate resistance R G f = 1 MHz open drain 1 Ω Switching times Turn-on Delay Time t d(on) 11 ns Turn-on Rise Time t r V DD =380V,I D =11A, 6 ns Turn-Off Delay Time t d(off) R G =4Ω,V GS =10V ns Turn-Off Fall Time Source- Drain Diode Characteristics t f ns Source-drain current(body Diode) I SD T C =25 C 21 A Pulsed Source-drain current(body Diode) 63 A I SDM Forward on voltage V SD Tj=25 C,I SD =21A,V GS =0V V Reverse Recovery Time t rr 310 ns Reverse Recovery Charge Q rr Tj=25 C,I F =21A,di/dt=100A/μs 5 uc Peak Reverse Recovery Current Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2. Tj=25,VDD=50V,VG=10V, R G =25Ω I rrm 28 A

3 RATING AND CHARACTERISTICS CURVES (RM21N650T7) Figure1. Safe operating area Figure3. Source-Drain Diode Forward Voltage Figure4. Output characteristics Figure5. Transfer characteristics Figure6. Static drain-source on resistance Figure7. R DS(ON) vs Junction Temperature

4 RATING AND CHARACTERISTICS CURVES (RM21N650T7) Figure8. BV DSS vs Junction Temperature Figure9. Maximum I D vs Junction Temperature Figure10. Gate charge waveforms Figure11. Capacitance Figure12. Transient Thermal Impedance

5 Testcircuit 1Gate charge test circuit & Waveform 2Switch Time Test Circuit 3Unclamped Inductive Switching Test Circuit & Waveforms

6 TO-247 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A b b b c c D E REF REF E REF REF L L L e TYP TYP H REF REF

7 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.