Device Marking Device Device Package Reel Size Tape width Quantity EZ TO
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1 N-Channel Trench Power MOSFET General Description The EZ8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R DS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Features V DS =85V; I D =92A@ V GS =10V; R DS(ON) V GS =10V Special Designed for E-Bike Controller Application Ultra Low On-Resistance High UIS and UIS 100% Test To-220 Top View Schematic Diagram Application 64V E-Bike Controller Applications Hard Switched and High Frequency Circuits Uninterruptible Power Supply V DS = 85 V I D = 92A R DS(ON) = 6.5 mω Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity EZ TO Table 1. Absolute Maximum Ratings (TA=25 ) Symbol Parameter Value Unit VDS Drain-Source Voltage (VGS=0V) 85 V VGS Gate-Source Voltage (VDS=0V) ±25 V I D (DC) Drain Current (DC) at Tc=25 92 A I D (DC) Drain Current (DC) at Tc= A I DM (pluse) Drain Current-Continuous@ Current-Pulsed (Note 1) 368 A dv/dt Peak Diode Recovery Voltage 30 V/ns P D Maximum Power Dissipation(Tc=25 ) 139 W Derating Factor 0.93 W/ EAS Single Pulse Avalanche Energy (Note 2) 625 mj T J,T STG Operating Junction and Storage Temperature Range -55 To 175 Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition:t J=25,VDD=40V,VBGB=10V,RG=25Ω - 1 -
2 Table 2. Thermal Characteristic Symbol Parameter Value Unit R JC Thermal Resistance,Junction-to-Case 1.08 /W Table 3. Electrical Characteristics (TA=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV DSS Drain-Source Breakdown Voltage V GS=0V I D=250μA 85 V I DSS Zero Gate Voltage Drain Current(Tc=25 ) V DS=76V,V GS=0V 1 μa I DSS Zero Gate Voltage Drain Current(Tc=125 ) V DS=76V,V GS=0V 10 μa I GSS Gate-Body Leakage Current V GS=±20V,V DS=0V ±100 na V GS(th) Gate Threshold Voltage V DS=V GS,I D=250μA V R DS(ON) Drain-Source On-State Resistance V GS=10V, I D=40A mω Dynamic Characteristics g FS Forward Transconductance V DS=10V,I D=15A 20 S Ciss Input Capacitance 5053 PF C oss Output Capacitance V DS=25V,V GS=0V, f=1.0mhz 442 PF Reverse Transfer Capacitance 145 PF C rss Q g Total Gate Charge 106 nc Q gs Gate-Source Charge V DS=50V,I D=40A, 19 nc V GS=10V Q gd Switching Times Gate-Drain Charge 47.9 nc t d(on) Turn-on Delay Time 15 ns t r Turn-on Rise Time V DD=30V,I D=40A,R L=15Ω 18 ns t d(off) Turn-Off Delay Time V GS=10V,R G=2.5Ω 31 ns t f Turn-Off Fall Time 38 ns Source-Drain Diode Characteristics I SD Source-drain Current(Body Diode) 92 A I SDM Pulsed Source-Drain Current(Body Diode) 368 A V SD Forward On Voltage (Note 1) T J=25,I SD=40A,V GS=0V V Q rr Reverse Recovery Charge (Note 1) di/dt=100a/μs 113 nc t rr Reverse Recovery Time (Note 1) T J=25,I F=75A 56 ns t on Forward Turn-on Time Intrinsic turn-on time is negligible(turn-on is dominated by L S+L D) Notes 1.Pulse Test: Pulse Width 300μs, Duty Cycle 1.5%, RG=25Ω, Starting T J=25-2 -
3 Test Circuit 1) E AS Test Circuits 2) Gate Charge Test Circuit: 3) Switch Time Test Circuit: - 3 -
4 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS (Curves) Figure1. Output Characteristics Figure2. Transfer Characteristics ID-Drain Current (A) ID-Drain Current (A) V DS Drain-Source Voltage (V) V GS Gate-Source Voltage (V) RDS(ON) On-Resistance (mω) Figure3. Rdson Vs Drain Current Normalized On-Resistance 3.0 Figure4. Rdson Vs Junction Temperature I D- Drain Current (A) T J -Junction Temperature( ) Figure5. Gate Charge Figure6. Source- Drain Diode Forward VGS Gate-Source Voltage (V) IS - Source Current (A) Qg Gate Charge (nc) VSD Source-Drain Voltage (V) - 4 -
5 Figure7. Capacitance vs Vds Figure8. Safe Operation Area C Capacitance (pf) ID-Drain Current(A) V DS Drain-Source Voltage (V) Figure9. BVDSS vs Junction Temperature V DS Drain-Source Voltage (V) Figure10. VGS(th) vs Junction Temperature Normalized BVDSS T J-Junction Temperature( ) T J-Junction Temperature( ) Figure11. Normalized Maximum Transient Thermal Impedance R(t), Normalized Effective Transient Thermal Impedance Square Wave Pluse Duration(sec) - 5 -
6 TO-220 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max A A b b c c D E E e TYP TYP. e F H h L L V REF REF. Φ
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http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON) and low gate charge.this device is suitable for use as
More informationRM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information
RM1216 P-Channel Enhancement Mode Power MOSFET Description The RM1216 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages.this device is suitable
More informationDual N-Channel Enhancement Mode Field PD1503YVS Effect Transistor
Dual N-Channel Enhancement Mode Field PDYVS PRODUCT SUMMARY V (BR)DSS R DS(ON) I D V.mΩ 9A V mω A 7 4 G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless Otherwise Noted) PARAMETERS/TEST
More informationDevice Marking Device Device Package Reel Size Tape width Quantity A2SHB HM2302A SOT-23 Ø180mm 8 mm 3000 units. Parameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM2302A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device
More informationNCE3415Y. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationSMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25
SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6003 NCE6003Y SOT-23-3L Ø180mm 8 mm 3000 units
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low
More informationTO-220F. 1. Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 4N60 SW4N60 TO-220 TUBE 2 SW F 4N60 SW4N60 TO-220F TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 2.2 Ω)@V GS =0V Gate Charge (Typ 30nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 TO-220F 2 3 TO-220 BS : 600V I D : 4.0A R DS(ON) : 2.2ohm
More informationPFP15T140 / PFB15T140
FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationP-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2
Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
More informationMDF7N60 N-Channel MOSFET 600V, 7 A, 1.1Ω
General Description MDF7N is suitable device for SMPS, high Speed switching and general purpose applications. MDF7N N-Channel MOSFET V, 7 A,.Ω Features = V = 7.A @ = V R DS(ON).Ω @ = V Applications Power
More informationSymbol Parameter Value Units V DSS Drain to Source Voltage 400 V. Total Power Dissipation ) 40 W Derating Factor above 25 0.
400V N-Channel MOSFET Features RDS(ON) (Max 1.00Ω) @ VGS=10V Gate Charge : 18.0 nc (Typical) Improved dv/dt capability / Fast switching 100% EAS Tested BVDSS RDS(ON) MAX ID 400V 1.00Ω 6A TO-220F PKG General
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