N-Channel Enhancement Mode Field Effect Transistor

Transcription

1 PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage V GS ±2 V Continuous Drain Current T C = 25 C 8 T C = C Pulsed Drain Current I DM 25 Avalanche Current I AR 4 Avalanche Energy L =.55mH E AS 4 Repetitive Avalanche Energy 2 L =.mh E AR 2 Power Dissipation I D 55 T C = 25 C 92 T C = C Operating Junction & Storage Temperature Range T j, T stg -55 to 5 Lead Temperature ( / 6 from case for sec.) T L 275 THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc.65 Junction-to-Ambient R θja 62.5 C / W Case-to-Heatsink R θcs.5 Pulse width limited by maximum junction temperature. 2 Duty cycle % P D 76 A mj W C ELECTRICAL CHARACTERISTICS (T C = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS MIN TYP MAX UNIT STATIC Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25μA 75 V Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25μA Gate-Body Leakage I GSS V DS = V, V GS = ±2V ±25 na Zero Gate Voltage Drain Current I DSS V DS = 6V, V GS = V μa V DS = 6V, V GS = V, T J = 25 C

2 On-State Drain Current I D(ON) V DS = V, V GS = V 8 A Drain-Source On-State Resistance R DS(ON) V GS = V, I D = 8A mω Forward Transconductance g fs V DS = 5V, I D = 8A 5 S DYNAMIC Input Capacitance C iss 4645 Output Capacitance C oss V GS = V, V DS = 25V, f = MHz 78 Reverse Transfer Capacitance C rss Total Gate Charge 2 Q g 95 Gate-Source Charge 2 Q gs V DS =6V, V GS = V, 42 Gate-Drain Charge 2 Q gd 5 I D = 8A 67 Turn-On Delay Time 2 t d(on) 8 Rise Time 2 t r V DD = 4V, 5 Turn-Off Delay Time 2 t d(off) I D 4A, V GS = V, R GS = 2.5Ω 7 pf nc ns Fall Time 2 t f 25 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T C = 25 C) Continuous Current I S 8 Pulsed Current 3 I SM 25 Forward Voltage V SD I F = 4A, V GS = V.3 V Reverse Recovery Time t rr 2 ns Peak Reverse Recovery Current I RM(REC) I F = I S, dl F /dt = A / μs 2 A Reverse Recovery Charge Q rr 4 nc Pulse test : Pulse Width 3 μsec, Duty Cycle 2%. 2 Independent of operating temperature. 3 Pulse width limited by maximum junction temperature. A REMARK: THE PRODUCT MARKED WITH, DATE CODE or LOT # Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name. 2

3 Typical Output Characteristics 8.V 7.V V 6.V 5.5V 5.V Typical Transfer Characteristics VDS= 25V TJ=25 C RDS(ON), Normalized Drain-to-Source On Resistance ID= 4A VGS= V TJ, Junction Temperature( C) Normalized On-Resistance Vs.Temperature Typical Gate Charge Vs. Gate-to-Source Voltage 2 ID= 4A C, Capacitance(pF) VGS, Gate-to-Source Voltage(V) Capacitance-Characteristics VGS= V, f= MHZ Ciss Coss Crss Typical Source-Drain Diode Forward Voltage VGS, Gate-to-Source Voltage(V) VDS= 37V 6V QG, Total Gate Charge (nc) ISD, Rrverse Drain Current(A) TJ=5 C TJ=25 C VGS= V VSD, Source-to-Drain Voltage(V) 3

4 Maximum Safe Operating Area Tc=25 C RθJC=.65 C/W Sing Pulse OPERATION IN THIS AREA LIMTED BY RDS(on) μsec msec msec r(t), Normalized Effctive Transient Thermal Resistance. D= SINGLE PULSE Transient Thermal Respence Curre Notes:.RθJC(t)=r(t)*R 2.RθJC=.65 C/W 3.Tj+Tc=P*RθJC(t) 4.Duty Cycle, D=t/t2 P (PK).... t, Rectangular Pulse Duration(sec) t t2 4

5 (3-Lead) MECHANICAL DATA Dimension mm Min. Typ. Max. Dimension mm Min. Typ. Max. A H B I C 2 J D K E L F M G N 7 5