N- & P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 N- & annel Enhancement Mode P2OAG TSOP- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 2V mω.a annel -2V 5mΩ -2.5A G D G D D S D2 5 2 G : GATE D : DRAIN S : SOURCE S S G S2 G2 ABSOLUTE MAXIMUM RATINGS (T A = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel annel UNITS Drain-Source Voltage V DS 2-2 V Gate-Source Voltage V GS ± ± V Continuous Drain Current T A = 25 C T A = 7 C I D A Pulsed Drain Current I DM 5-5 Avalanche Current I AS Avalanche Energy L =.mh E AS.5 7. mj Power Dissipation T A = 25 C. T A = 7 C Junction & Storage Temperature Range T j, T stg -55 to 5 C P D.72 W THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Ambient t s R θja Junction-to-Ambient Steady-State R θja 5 C / W Junction-to-Lead Steady-State R θjc 8 Pulse width limited by maximum junction temperature. ELECTRICAL CHARACTERISTICS (T J = 25 C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS V GS = V, I D = 25µA V GS = V, I D = -25µA 2-2 V REV. Dec-22-29

2 N- & annel Enhancement Mode P2OAG TSOP- Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25µA V DS = V GS, I D = -25µA Gate-Body Leakage I GSS V DS = V, V GS = ±V V DS = V, V GS = ±V ± ± na V DS = V, V GS = V V DS = -V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = 55 C µa V DS = -V, V GS = V, T J = 55 C - On-State Drain Current I D(ON) V DS = 5V, V GS = V V DS =-5V, V GS = -V 5-5 A V GS =.8V, I D = 2A 9 V GS = -.8V, I D = -A 7 Drain-Source On-State resistance R DS(ON) V GS = 2.5V, I D = A V GS = -2.5V, I D = -2A mω V GS =.5V, I D =.A 7 V GS = -.5V, I D = -.A 85 5 Forward Transconductance g fs V DS = V, I D =.A V DS = -V, I D = -.A S DYNAMIC Input Capacitance C iss annel V GS = V, V DS = 5V, 2 5 Output Capacitance C oss f = MHz annel 8 pf Reverse Transfer Capacitance C rss V GS = V, V DS = -5V, f = MHz Gate Resistance Rg VGS = V, VDS = V, f = MHz.5. Ω REV. 2 Dec-22-29

3 N- & annel Enhancement Mode P2OAG TSOP- Total Gate Charge 2 Q g annel V DS =.5V (BR)DSS, V GS =.5V Gate-Source Charge 2 Q gs I D =.A annel.5 nc Gate-Drain Charge 2 Q gd V DS =.5V (BR)DSS, V GS =.5V I D = -.A.. Turn-On Delay Time 2 t d(on) annel Rise Time 2 t r V DS = 5V I D.A, V GS = V, R GEN = Ω 7 Turn-Off Delay Time 2 t d(off) annel V DS = -5V, R L = Ω ns Fall Time 2 t f I D -.A, V GS = -V, R GEN = Ω 22 SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = 25 C) Continuous Current I S A Forward Voltage V SD I F =.A, V GS = V I F = -.A, V GS = V V Reverse Recovery Time t rr I F =.A, dl F /dt = A / µs I F = -.A, dl F /dt = A / µs 25 ns Reverse Recovery Charge Q rr 8 nc Pulse test : Pulse Width µsec, Duty Cycle 2%. 2 Independent of operating temperature. REMARK: THE PRODUCT MARKED WITH 52YWW, DATE CODE or LOT # 52YWW 2 Marking Description: 5 N+P MOSFET 2 - Serial Number Y - Year W - Week REV. Dec-22-29

4 N- & annel Enhancement Mode P2OAG TSOP- TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL ID, Drain-To-Source Current(A) 9 VGS=V VGS=9V VGS=8V VGS=7V VGS=V VGS=5V VGS=.5V VGS=V 2. Output Characteristics VGS =2V VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature ID, Drain-To-Source Current(A) 5.E+2 Transfer Characteristics VGS, Gate-To-Source Voltage(V) Capacitance Characteristic VGS=.5V ID=.A TJ, Junction Temperature( C) On-Resistance VS Drain Current VGS =.8V VGS = 2.5V VGS =.5V 9 ID, Drain-To-Source Current C, Capacitance(pF).E+2.E+2 2.E+2.E+2.E Ciss Coss Crss VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source ID =.A 2 8 VGS, Gate-To-Source Voltage(V) REV. Dec-22-29

5 N- & annel Enhancement Mode P2OAG TSOP- Gate charge Characteristics.E+2 Source-Drain Diode Forward Voltage VGS, Gate-To-Source Voltage(V) 8 ID=.A VDS=V Qg, Total Gate Charge Safe Operating Area IS, Source Current(A).E+.E+.E-.E-2.E-.E-.E-5. T J =5 C VSD, Source-To-Drain Voltage(V) T J =25 C Single Pulse Maximum Power Dissipation ID, Drain Current(A). Operation in This Area is Limited by RDS(ON) NOTE :.VGS= V 2.TA=25 C.E+.RθJA = 5 C/W.Single Pulse ms ms ms S S DC.. VDS, Drain-To-Source Voltage(V) Power(W) Transient Thermal Response Curve 5 SINGLE PULSE RθJA = 5 C/W TA=25 C.... Single Pulse Time(s) r(t), Normalized Effective Transient Thermal Resistance.E+.E-.E-2 Duty Cycle= single Pluse Note.Duty cycle, D= t / t2 2.RthJA = 5 /W.T J-T A = P*RthJA(t).RthJA(t) = r(t)*rthja.e-.e-.e-2.e-.e+.e+.e+2.e+ T, Square Wave Pulse Duration[sec] REV. 5 Dec-22-29

6 N- & annel Enhancement Mode P2OAG TSOP- TYPICAL PERFORMANCE CHARACTERISTICS P-CHANNEL -ID, Drain-To-Source Current(A) 9 VGS=V VGS=9V VGS=8V VGS=7V VGS=V VGS=5V VGS=.5V -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature 2. Output Characteristics VGS =V VGS =2V ID, Drain-To-Source Current(A) 5.E+2 Transfer Characteristics VGS, Gate-To-Source Voltage(V) Capacitance Characteristic VGS=-.5V ID=-.A TJ, Junction Temperature( C) On-Resistance VS Drain Current VGS = -.8V VGS = -2.5V VGS = -.5V 9 -ID, Drain-To-Source Current C, Capacitance(pF).E+2.E+2 2.E+2.E+2.E Ciss Coss Crss VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source ID = -.A 2 8 -VGS, Gate-To-Source Voltage(V) REV. Dec-22-29

7 N- & annel Enhancement Mode P2OAG TSOP- Gate charge Characteristics Source-Drain Diode Forward Voltage.E+2 -VGS, Gate-To-Source Voltage(V) -ID, Drain Current(A) 8 2 ID=-.A VDS=-V 2 5. Operation in This Area is Limited by R DS(ON) NOTE :.V GS= V 2.T A=25 C.R θja = 5 C/W.Single Pulse.E+ Qg, Total Gate Charge Safe Operating Area ms ms ms S S DC.. -VDS, Drain-To-Source Voltage(V) -IS, Source Current(A) Power(W).E+.E+.E-.E-2.E-.E-.E Transient Thermal Response Curve 5 T J =5 C -VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation SINGLE PULSE RθJA = 5 C/W TA=25 C.... Single Pulse Time(s) T J =25 C r(t), Normalized Effective Transient Thermal Resistance.E+.E- Duty Cycle= single Pluse.E-2.E-.E-.E-2.E-.E+.E+.E+2.E+ T, Square Wave Pulse Duration[sec] Note.Duty cycle, D= t / t2 2.RthJA = 5 /W.TJ-TA = P*RthJA(t).RthJA(t) = r(t)*rthja REV. 7 Dec-22-29

8 N- & annel Enhancement Mode P2OAG TSOP- TSOP- MECHANICAL DATA Dimension mm Min. Typ. Max. Dimension mm Min. Typ. Max. A.95 H.8..2 B I.. C.5..7 J D K E.7.2 L F.5 M G...5 N H C B A.95 I D E G F.8.55 REV. 8 Dec-22-29