2N65 650V N-Channel Power MOSFET

Transcription

1 R S E M I C O N D U C T O R FEATURES RDS(ON)< 4. ID= 1A Fast switching capability Lead free in compliance with EU RoHS directive. Improved dv/ dt capability, high ruggedness MECHANICAL DATA Case:TO-22,ITO-22, TO- 251, TO- 252, TO- 262,TO-263 Package Ordering Information Part No. Package Packing -TU TO-22 5pcs / Tube F-TU ITO-22 5pcs / Tube E-TU TO-262 5pcs / Tube D-TU TO-263 5pcs / Tube D-TR TO-263 8pcs / 13" Reel N-TU TO pcs / Tube M-TU TO pcs / Tube M-TR TO Kpcs / 13" Reel PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 65 V GS =1V 2 TO-22AB TO-262 E Pin Definition: 1. Gate 2. Drain 3. Source ITO-22AB F TO-251 N Block Diagram G TO-263 D 2 TO-252 M D 1 3 ABSOLUTE MAXIMUM RATINGS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage V DSS 65 V S Gate-Source Voltage V GSS 3 V Continuous Drain Current I D 2. A Pulsed Drain Current (Note 2) I DM 8. A Avalanche Energy 115 mj EAS TO-22/TO-263/ TO Power Dissipation ITO P D W TO- 251/ TO Junction Temperature T J +15 C Storage Temperature T STG -55 ~ +15 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature 3. L=3mH, I AS= 2. 7A, VDD= 5V, RG= 25 Ω,Starting TJ= 25 C JINAN JINGHENG ELECTRONICS CO., LTD

2 THERMAL DATA PARAMETER SYMBOL RATING UNIT TO-22/ITO Junction to Ambient TO-26 2/ TO-263 θ JA C/W TO-2 51/ TO Junction to Case TO-22/TO-263/ TO ITO-22 θ JC 55. TO-2 51/ TO C/W ELECTRICAL CHARACTERISTICS (T C =25 C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT OFF CHARACTERISTICS Drain-Source Breakdown Voltage BV DSS VGS= V, ID= 25μA 65 V Drain-Source Leakage Current I DSS VDS=, VGS= V 1 μa Gate- Source Leakage Current Forward VG= 3V, VDS= V 1 na I GSS Reverse VGS=- 3V, VDS= V -1 na ON CHARACTERISTICS Gate Threshold Voltage V GS(TH) VDS= VGS, ID= 25μA V Static Drain-Source On-State Resistance R DS(ON) VGS= 1V, ID= 1. A Ω DYNAMIC CHARACTERISTICS Input Capacitance C ISS 3 pf Output Capacitance C OSS VDS= 25V, VGS= V, f= 1MHz 45 pf Reverse Transfer Capacitance C RSS 2 pf SWITCHING CHARACTERISTICS Turn-On Delay Time t D(ON) 1 ns Turn-On Rise Time t R VDD= 3V, ID= 2A, 25 ns Turn-Off Delay Time t D(OFF) RG= 25Ω( Note1, 2) 2 ns Turn-Off Fall Time t F 25 ns Total Gate Charge Q G 57. nc VDS= 48V, ID= 2. 4A, Gate-Source Charge Q GS VGS= 1V( Note1, 2) 18. nc Gate-Drain Charge Q GD 2 nc DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage V SD VGS= V, IS= 2. A 1.4 V Maximum Continuous Drain-Source Diode Forward Current Maximum Pulsed Drain-Source Diode Forward Current IS 2. A I SM 8. A Reverse Recovery Time t rr VGS= V, IS= 2A 357 ns Reverse Recovery Charge Q RR dif/ dt= 1A/μ s( Note 1) 2 μc Notes: 1. Pulse Test: Pulse width 3μS, Duty cycle 2%. 2. Essentially independent of operating temperature. JINAN JINGHENG ELECTRONICS CO., LTD

3 TEST CIRCUITS AND WAVEFORMS D.U.T. + V DS L R G Driver V DD V GS Same Type as D.U.T. * dv/dt controlled by R G * SD controlled by pulse period * D.U.T.-D vice Under Test Peak Diode Recovery dv/dt Test Circuit V GS (Driver) P.W. Period D= P. W. Period VGS=1V I FM, Body Diode Forward Current I SD (D.U.T.) di/dt I RM Body Diode Reverse Current Body Diode Recovery dv/dt V DS (D.U.T.) V DD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms JINAN JINGHENG ELECTRONICS CO., LTD

4 TEST CIRCUITS AND WAVEFORMS(Cont.) Switching Test Circuit Switching Waveforms Gate Charge Test Circuit Gate Charge Waveform BV DSS I AS V DD I D(t) V DS(t) Unclamped Inductive Switching Test Circuit t p Time Unclamped Inductive Switching Waveforms JINAN JINGHENG ELECTRONICS CO., LTD

5 TYPICAL CHARACTERISTICS 3 Drain Current vs. Drain-Source Breakdown Voltage 3 Drain Current vs. Gate Threshold Voltage Drain Current, ID ( μa ) Drain Current, ID ( μa ) Drain-Source Breakdown Voltage, BV DSS (V) Gate Threshold Voltage, V TH (V) Drain-Source On-State Resistance Characteristics Drain current vs. Source to Drain Voltage Drain Current, ID (A) VGS= 1V, ID= 1A Drain Current, ID (A) Drain to Source Voltage, VDS Source to Drain Voltage, VSD JINAN JINGHENG ELECTRONICS CO., LTD

6 TO-22AB.622(15. 8).583(14. 8).416(1.57).377(9.57).163(4.14).139(3.54) DIA.116(2.94).1(2.54).283(7.2).228(5. 8).192(4.87).168(4.27).58(1.47).42(1.7) PIN.159(4.5).116(2. 95).62(1.57).38(. 97).44(1. 11).2(.51).56(14.22).5(12. 7).115(2.92).8(2.3).18(2.74).92(2.34).28(5.28).192(4.88).25(.64).12(.3) ITO-22AB.61(15.5).571(14.5).413(1.5).374(9.5).15(3.8).126(3.2) DIA.114(2.9).98(2.5).287(7.3).248(6.3).191(4.84).167(4.25).13(3.31).99(2.52) PIN.177(4.5).13(3.3).59(1.5).35(. 9).67(1.7).59(1.5).551(14.).512(13.).11(2.8).12(2.6).35(.9).12(.3).18(2.75).93(2.35).29(.73).19(.47) TO (1.67).38(9.65).245(6.22) MIN.19(4.83).16(4.6).58(1.47).42(1.7).362(9.2).32(8.13) 1 K 2.639(16.22).56(14.22).66(1.68).36(.92).53(1.34).47(1.2).95(2.41).83(2.1).4(1.1).24(.61).131(3.32).83(2.1).134(3.4).15(2.67).18(.46).12(.3) Dimensions in inches and (millimeters) JINAN JINGHENG ELECTRONICS CO., LTD

7 TO-252 (DPAK).268(6.8).244(6.2).218(5.53).2(5.1).14( 2.65).85(2.15). 24(. 61).17(.42).5(1.27).248(6.3).22(5.6) 1 K 2.285(7. 25).27(6. 85).35(.88).13(3. 3). 94(2. 4). 84(2. 14).114(2. 9). 34(. 86). 18(. 46).39(1. ) MIN..24(.61).17(.42) Dimensions in inches and (milimeters) TO (2.4).268(6.8).87(2.2).252(6.4).218(5.53).24(.61).22(5.13).16(.41).248(6.3).232(5.9).285(7.25).27(6.85).52(1.31).28(.71).33(.85).18(.45).171(4.35).156(3.95).24(.61).16(.41).94(2.39).86(2.19) Dimensions in inches and (milimeters) TO (1.84).57(1.44).416(1.57).377(9.57).192(4.87).168(4.27).58(1.47).42(1.7).439(11.14).399(1.14).62(1.57).38(.97).156(3.95).116(2.95).18(.46).12(.3).528(13.4).44(1.11).2(.51).5(12.7).115(2.92).8(2.3).18(2.74).92(2.34) Dimensions in inches and (milimeters) JINAN JINGHENG ELECTRONICS CO., LTD