Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

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1 General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOT23-3S Pin Configuration D D S G G S BVDSS RDSON ID 20V 19m 6.7A Features 20V, 6.7A, RDS(ON)=19mΩ@VGS=4.5V Improved dv/dt capability Fast switching Green Device Available Suit for 1.8V Gate Drive Applications Applications Notebook Load Switch Hend-Held Instruments Absolute Maximum Ratings Tc=25 unless otherwise noted Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V I D Drain Current Continuous (T C =25 ) 6.7 A Drain Current Continuous (T C =100 ) 4.2 A I DM Drain Current Pulsed A P D Power Dissipation (T C =25 ) 1.56 W Power Dissipation Derate above W/ T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction to ambient /W 1

2 Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage V GS =0V, I D =250uA V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D =1mA V/ I DSS V DS =20V, V GS =0V, T J = ua Drain-Source Leakage Current V DS =16V, V GS =0V, T J = ua I GSS Gate-Source Leakage Current V GS =±10V, V DS =0V ±100 na On Characteristics V GS =4.5V, I D =4A R DS(ON) V GS(th) Static Drain-Source On-Resistance V GS =2.5V, I D =3A m V GS =1.8V, I D =2A Gate Threshold Voltage V V GS =V DS, I D =250uA V GS(th) V GS(th) Temperature Coefficient mv/ gfs Forward Transconductance V DS =10V, I S =4A S Dynamic and switching Characteristics Q g Total Gate Charge 2, Q gs Gate-Source Charge 2, 3 V DS=10V, V GS=4.5V, I D =4A Q gd Gate-Drain Charge 2, T d(on) Turn-On Delay Time 2, T r Rise Time 2, 3 V DD=10V, V GS=4.5V, R G = T d(off) Turn-Off Delay Time 2, 3 I D =1A T f Fall Time 2, C iss Input Capacitance C oss Output Capacitance V DS =10V, V GS =0V, F=1MHz C rss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current V G =V D =0V, Force Current A I SM Pulsed Source Current A V SD Diode Forward Voltage V GS =0V, I S =1A, T J = V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. Essentially independent of operating temperature. 2

3 ID, Continuous Drain Current (A) Normalized On Resistance (m ) T C, Case Temperature ( ) Fig.1 Continuous Drain Current vs. T C T J, Junction Temperature ( ) Fig.2 Normalized RDSON vs. T J Normalized Gate Threshold Voltage (V) VGS, Gate to Source Voltage (V) T J, Junction Temperature ( ) Fig.3 Normalized V th vs. T J Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJA) ID, Continuous Drain Current (A) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance V DS, Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area 3

4 Fig.7 Switching Time Waveform Fig.8 Gate Charge Waveform 4

5 SOT23-3S PACKAGE INFORMATION Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A A b c D E E e TYP TYP. e L REF REF. L θ