N- & P-Channel Enhancement Mode Field Effect Transistor

Transcription

1 N- & annel Enhancement Mode P8NDG TO-- PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel V 8mΩ A annel -V 8mΩ -A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T A = C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL annel annel UNITS Drain-Source Voltage V DS - V Gate-Source Voltage V GS ± ± V Continuous Drain Current T C = C - T C = C I D 3 - Pulsed Drain Current I DM - Avalanche Current I AS - Avalanche Energy L=.mH E AS mj Power Dissipation T C = C T C = C Junction & Storage Temperature Range T j, T stg - to C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc C / W Junction-to-Ambient R θja C / W Pulse width limited by maximum junction temperature. P D 8 A W ELECTRICAL CHARACTERISTICS (T J = C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC LIMITS MIN TYP MAX UNIT Drain-Source Breakdown Voltage Gate Threshold Voltage V (BR)DSS V GS(th) V GS = V, I D = µa V GS = V, I D = -µa V DS = V GS, I D = µa V DS = V GS, I D = -µa V Gate-Body Leakage I GSS V DS = V, V GS = ±V V DS = V, V GS = ±V ± ± na REV. Nov--

2 N- & annel Enhancement Mode P8NDG TO-- V DS = 3V, V GS = V V DS = -3V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = 3V, V GS = V, T J = C µa V DS = -3V, V GS = V, T J = C - On-State Drain Current I D(ON) V DS = V, V GS = V V DS =-V, V GS = -V - A V GS = V, I D = A 3 9 Drain-Source On-State Resistance R DS(ON) V GS = -V, I D = -.A V GS = V, I D = 7A mω V GS = -V, I D = -.A 33 8 Forward Transconductance g fs V DS = V, I D = 7A V DS = -V, I D = -.A S DYNAMIC Input Capacitance C iss annel Output Capacitance C oss V GS = V, V DS = V, f = MHz annel 8 9 pf Reverse Transfer Capacitance C rss V GS = V, V DS = -V, f = MHz 3 8 Total Gate Charge Q g annel V DS =.V (BR)DSS, V GS = V, 7 8 Gate-Source Charge Q gs I D = 7A annel nc Gate-Drain Charge Q gd V DS =.V (BR)DSS, V GS = -V, I D = -.A REV. Nov--

3 N- & annel Enhancement Mode P8NDG TO-- Turn-On Delay Time t d(on) annel Rise Time t r V DS = V I D A, V GS = V, R GEN = Ω Turn-Off Delay Time t d(off) annel ns Fall Time t f V DS = -V I D -A, V GS = -V, R GEN = Ω SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T J = C) Forward Voltage V SD I F = 7A, V GS = V I F = -.A, V GS = V - V Continuous Current I S - A Reverse Recovery Time t rr I F = 7A, dl F /dt = A / µs I F = -.A, dl F /dt = A / µs 3 ns Reverse Recovery Charge Q rr 3 nc Pulse test : Pulse Width 3 µsec, Duty Cycle %. Independent of operating temperature. REV. Nov-- 3

4 N- & annel Enhancement Mode P8NDG TO-- TYPICAL PERFORMANCE CHARACTERISTICS N-CHANNEL 3.8 Output Characteristics V G S = V V G S =. V V G S = V V G S = 3 V 3 VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature 3 T J= C T J= C T J= - C E+3 Transfer Characteristics VGS, Gate-To-Source Voltage(V) Capacitance Characteristic RDS(ON)ON-Resistance(OHM) VGS=V ID=7A TJ, Junction Temperature( C) On-Resistance VS Drain Current C, Capacitance(pF) 8.E+ Ciss.E+.E+.E+ Coss Crss.E+ 3 VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance( mohm) 7 VGS =.V VGS = V 3 ID, Drain-To-Source Current(A) RDS(ON)ON-Resistance(mOHM) 8 ID = 7A 8 VGS, Gate-To-Source Voltage(V) REV. Nov--

5 N- & annel Enhancement Mode P8NDG TO-- Gate charge Characteristics Source-Drain Diode Forward Voltage.E+3 VGS, Gate-To-Source Voltage(V) 8 ID=7A VDS=V 8 Qg, Total Gate Charge(nC) Safe Operating Area IS, Source Current(A).E+.E+ TJ = C.E+ TJ = C.E-.E-.E-3.E VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation ID, Drain Current(A) Operation in This Area is Limited by RDS(ON) NOTE :.VGS= V.TC= C 3.RθJC = C/W.Single Pulse.E+ us ms ms.. VDS, Drain-To-Source Voltage(V) DC Power(W) 8 Transient Thermal Response Curve SINGLE PULSE RθJC = C/W TC= C.... Single Pulse Time(s) r(t), Normalized Effective Transient Thermal Resistance.E+.E- Duty Cycle= single Pluse Note.Duty cycle, D= t / t.rthjc = o C/W 3.TJ-TC = P*RthJC(t).RthJC(t) = r(t)*rthjc.e-.e-.e-3.e-.e-.e+ T, Square Wave Pulse Duration[sec] REV. Nov--

6 N- & annel Enhancement Mode P8NDG TO-- TYPICAL PERFORMANCE CHARACTERISTICS P-CHANNEL 3. Output Characteristics V G S = - V V G S = -7 V V G S = -. V V G S = - V V G S = -3 V 3 -VDS, Drain-To-Source Voltage(V) On-Resistance VS Temperature.E+3 Transfer Characteristics 3 T J= C T J= C T J= - C VGS, Gate-To-Source Voltage(V) Capacitance Characteristic.. RDS(ON)ON-Resistance(OHM) VGS=-V ID=-.A TJ, Junction Temperature( C) On-Resistance VS Drain Current C, Capacitance(pF) 8.E+.E+.E+.E+.E+ Ciss Coss Crss 3 -VDS, Drain-To-Source Voltage(V) On-Resistance VS Gate-To-Source RDS(ON)ON-Resistance(mOHM) VGS =.V VGS = V RDS(ON)ON-Resistance(mOHM) 9 3 -ID, Drain-To-Source Current(A) ID = -.A 8 -VGS, Gate-To-Source Voltage(V) REV. Nov--

7 N- & annel Enhancement Mode P8NDG TO-- Gate charge Characteristics Source-Drain Diode Forward Voltage.E+3 VGS, Gate-To-Source Voltage(V) 8 ID= -.A VDS= -V 8 Qg, Total Gate Charge(nC) Safe Operating Area IS, Source Current(A).E+.E+ TJ = C.E+ TJ = C.E-.E-.E-3.E VSD, Source-To-Drain Voltage(V) Single Pulse Maximum Power Dissipation ID, Drain Current(A) Operation in This Area is Limited by R DS(ON) NOTE :.V GS= V.T C= C 3.R θjc = C/W.Single Pulse.E+ us ms ms.. -VDS, Drain-To-Source Voltage(V) Transient Thermal Response Curve DC Power(W) 8 SINGLE PULSE RθJC = C/W TC= C.... Single Pulse Time(s) r(t), Normalized Effective Transient Thermal Resistance.E+.E- Duty Cycle= single Pluse Note.Duty cycle, D= t / t.rthjc = o C/W 3.TJ-TC = P*RthJC(t).RthJC(t) = r(t)*rthjc.e-.e-.e-3.e-.e-.e+ T, Square Wave Pulse Duration[sec] REV. 7 Nov--