T C =25 unless otherwise specified. A I DM Pulsed Drain Current, V [2] Figure 6 P D. 270 mj dv/dt Peak Diode Recovery dv/dt [3] 4.

Transcription

1 400V N-Channel MOSFET General Features Low ON Resistance Low Gate Charge (typical 8.6nC) Fast Switching 00% Avalanche Tested RoHS Compliant/Lead Free BV DSS R DS(ON) (Max.) I D 400V.0Ω 5.5A Applications High Efficiency SMPS Adaptor/Charger Active PFC LCD Panel Power Ordering Information Part Number Package Marking FTP06N40 TO-220 FTP06N40 FTA06N40 TO-220F FTA06N40 Absolute Maximum Ratings T C =25 unless otherwise specified Symbol Parameter FTP06N40 FTA06N40 Unit V DSS Drain-to-Source Voltage [] 400 V I D Continuous Drain Current * I Continuous Drain Current Figure 3 A I DM Pulsed Drain Current, V [2] Figure 6 P D Power Dissipation W Derating Factor above W/ V GS Gate-to-Source Voltage ±30 V E AS Single Pulse Avalanche Energy L=8mH, I D =5.5A 270 mj dv/dt Peak Diode Recovery dv/dt [3] 4.5 V/ns T L Soldering Temperature 300 Distance of.6mm from case for 0 seconds T J and T STG Operating and Storage Temperature Range -55 to 50 *Drain Current limited by Maximum Junction Temperature. Caution: Stresses greater than those listed in the Absolute Maximum Ratings may cause permanent damage to the device. Thermal Characteristics Symbol Parameter FTP06N40 FTA06N40 Unit R θjc Thermal Resistance, Junction-to-Case R θja Thermal Resistance, Junction-to-Ambient /W /

2 Electrical Characteristics OFF Characteristics BV DSS T C =25 unless otherwise specified Symbol Parameter Min. Typ. Max. Unit Test Conditions Drain-to-Source Breakdown Voltage V V GS =0V, I D =250µA BV DSS / T J I DSS I GSS Breakdown Voltage Temperature Coefficient Drain-to-Source Leakage Current Gate-to-Source Leakage Current V/ Reference to 25, I D =250µA V DS =400V, V GS =0V µa V DS =320V, V GS =0V, T C = V GS =+30V na V GS =-30V ON Characteristics Symbol Parameter Min. Typ. Max. Unit Test Conditions T C =25 unless otherwise specified R DS(ON) Static Drain-to-Source On-Resistance Ω V GS =0V, I D =3.3A [4] V GS(TH) Gate Threshold Voltage V V DS = V GS, I D =250µA gfs Forward Transconductance S V DS =5V, I D =5.5A [4] Dynamic Characteristics Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions C ISS Input Capacitance C OSS Output Capacitance C RSS Reverse Transfer Capacitance Q G Total Gate Charge Q GS Gate-to-Source Charge Q GD Gate-to-Drain (Miller) Charge Resistive Switching Characteristics pf nc V GS =0V V DS =25V f=.0mh Z Figure 4 V DD =200V I D =5.5A Figure 5 Essentially independent of operating temperature Symbol Parameter Min. Typ. Max. Unit Test Conditions t d(on) Turn-on Delay Time t rise Rise Time t d(off) Turn-off Delay Time t fall Fall Time ns V DD =200V I D =5.5A V GS =0V R G =20Ω 2/

3 Source-Drain Diode Characteristics T C =25 unless otherwise specified Symbol Parameter Min Typ. Max. Units Test Conditions I SD Continuous Source Current (Body A Diode) Integral P-N diode in I SM Maximum Pulsed Current(Body MOSFET A Diode) V SD Diode Forward Voltage V I S =5.5A, V GS =0V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge nc V GS =0V I F =5.5A,di/dt=00A/µs NOTE: [] T J =+25 to +50 [2] Repetitive rating, pulse width limited by maximum junction temperature. [3] I SD =5.5A, di/dt 00A/µs, V DD BV DSS, T J =+50 [4] Pulse width 380µs; duty cycle 2%. 3/

4 ZθJC, Thermal Impedance(Normalized) Figure. Maximum Effective Thermal Impedance, Junction-to-Case 50% 20% 0% 5% 2% % single pulse E-06.0E-05.0E-04.0E-03.0E-02.0E-0 t P, Rectangular Pulse Duration(s).0E+00.0E+0 PD, Power Dissipation (W) Figure 2. Maximum Power Dissipation vs. Case Temperature T C, Case Temperature ( ) ID, Drain Current (A) Figure 3. Maximum Continuous Drain Current vs Case Temperature T C, Case Temperature ( ) ID, Drain Current(A) Figure 4. Typical Output Characteristics VGS=5V VGS=0 V VGS=6.5V VGS=5.5V VGS=5.0V VGS=4.5V VGS=4.0V V DS, Drain-to-Source Voltage(V) RDS(ON), Drain-to-Source ON Resistance(Ohm) Figure 5. Typical Drain-to-Source ON Resistance vs. Gate Voltage and Drain Current ID=2.75A ID=5.5A V GS, Gate-to-Source Voltage(V) 4/

5 IDM, Peak Current(A) 00 0 Figure 6. Maximum Peak Current Capability Transconductance may limit current in this region t P, Pulse Width(s) Figure 7. Typical Transfer Characteristics 00 Figure 8. Unclamped Inductive Switching Capability 6-55 ID, Drain-to-Source Current (A) IAS, Avalanche Current(A) 0 Starting TJ=50 Starting TJ= V GS, Gate-to-Source Voltage,(V) 0..E-06.E-05.E-04.E-03.E-02.E-0 t AV, Time in Avalanche(s) RDS(ON), Drain-to-Source ON Resistance(Ohm) Figure 9. Typical Drain-to-Source ON Resistance VGS=0V VGS=20V I D, Drain Current(A) RDS(ON), Drain-to-Source Resistance (Normalized) Figure 0. Typical Drain-to-Source On Resistance vs. Junction Temperature T J, Junction Temperature ( ) 5/

6 .20 Figure.Typical Breakdown Voltage vs. Junction Temperature.3 Figure 2.Typical Threshold Voltage vs. Junction Temperature BVDSS, Drain-to-Source Breakdown Voltage (Normalized) VGS(TH) Threshold Voltage (Normalized) T J, Junction Temperature ( ) T J, Junction Temperature ( ) 00 Figure 3. Maximum Forward Safe Operation Area 0000 Figure 4. Typical Capacitance vs. Drain-to-Source Voltage ID, Drain Current(A) 0 Operating in this area may be limited by RDS(ON) 0us 00us ms 0ms DC C, Capacitance(pF) CISS COSS CRSS V DS, Drain-to-Source Voltage(V) V DS, Drain Voltage(V) VGS. Gate-to-Source Voltage(V) Figure 5. Typical Gate Charge vs. Gate-to-Source Voltage ISD, Reverse Drain Current(A) Figure 6. Typical Body Diode Transfer Characteristics Q G, Gate Charge(nC) VSD, Source-to-Drain Voltage(V) 6/

7 Test Circuit 7/

8 8/

9 Package Dimensions 9/

10 0/

11 Published by ARK Microelectronics Co., Ltd. No.9, East Zijing Road, High-tek District, Chengdu, P. R. China All Rights Reserved. Disclaimers ARK Microelectronics Co., Ltd. reserves the right to make change without notice in order to improve reliability, function or design and to discontinue any product or service without notice. Customers should obtain the latest relevant information before orders and should verify that such information is current and complete. All products are sold subject to ARK Microelectronics Co., Ltd s terms and conditions supplied at the time of order acknowledgement. ARK Microelectronics Co., Ltd. warrants performance of its hardware products to the specifications at the time of sale, Testing, reliability and quality control are used to the extent ARK Microelectronics Co., Ltd deems necessary to support this warrantee. Except where agreed upon by contractual agreement, testing of all parameters of each product is not necessary performed. ARK Microelectronics Co., Ltd. does not assume any liability arising from the use of any product or circuit designs described herein. Customers are responsible for their products and applications using ARK Microelectronics Co., Ltd s components. To minimize risk, customers must provide adequate design and operating safeguards. ARK Microelectronics Co., Ltd. does not warrant or convey any license either expressed or implied under its patent rights, nor the rights of others. Reproduction of information in ARK Microelectronics Co., Ltd s data sheets or data books is permissible only if reproduction is without modification or alteration. Reproduction of this information with any alteration is an unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for such altered documentation. Resale of ARK Microelectronics Co., Ltd s products with statements different from or beyond the parameters stated by ARK Microelectronics Co., Ltd. for the product or service voids all express or implied warrantees for the associated ARK Microelectronics Co., Ltd s product or service and is unfair and deceptive business practice. ARK Microelectronics Co., Ltd is not responsible or liable for any such statements. Life Support Policy: ARK Microelectronics Co., Ltd s products are not authorized for use as critical components in life devices or systems without the expressed written approval of ARK Microelectronics Co., Ltd. As used herein:. Life support devices or systems are devices or systems which: a. are intended for surgical implant into the human body, b. support or sustain life, c. whose failure to perform when properly used in accordance with instructions for used provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. /