HCS90R1K5R 900V N-Channel Super Junction MOSFET

Transcription

1 HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Motor Control & LED Lighting Power DC-DC Converters Key Parameters Parameter Value Unit j,max 950 V I D 4. A R DS(on), max.5 Ω Qg, Typ 6.5 nc Package & Internal Circuit G D S TO-0F April 08 Absolute Maximum Ratings T J =5 unless otherwise specified Symbol Parameter Value Units S Drain-Source Voltage 900 V Gate-Source Voltage ±30 V I D Drain Current Continuous (T C = 5 ) 4. * A Drain Current Continuous (T C = 00 ).65 * A I DM Drain Current Pulsed (Note ) * A E AS Single Pulsed Avalanche Energy (Note ) 46 mj dv/dt MOSFET dv/dt ruggedness, =0 640V 50 V/ns dv/dt Reverse diode dv/dt, =0 640V, I DS I D 5 V/ns P D Power Dissipation (T C = 5 ) 6 W T J, T STG Operating and Storage Temperature Range -55 to +50 T L Maximum lead temperature for soldering purposes, /8 from case for 5 seconds * Drain current limited by maximum junction temperature Thermal Resistance Characteristics 300 Symbol Parameter Typ. Max. Units R θjc Junction-to-Case R θja Junction-to-Ambient /W SEMIHOW REV.A0, April 08

2 Electrical Characteristics T J =5 C unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units On Characteristics Gate Threshold Voltage =, I D = 50 μa V R DS(ON) Off Characteristics BS Drain-Source Breakdown Voltage = 0 V, I D = 50 μa V I DSS Static Drain-Source On-Resistance Zero Gate Voltage Drain Current = 900 V, = 0 V μa = 900 V, T J = μa I GSS Gate-Body Leakage Current = 30 V, = 0 V ±00 na Dynamic Characteristics = 0 V, I D = A Ω C iss Input Capacitance pf C oss Output Capacitance = 00 V, = 0 V, f =.0 MHz pf C rss Reverse Transfer Capacitance pf Switching Characteristics t d(on) Turn-On Time ns t r Turn-On Rise Time = 450 V, I D = A, ns t d(off) Turn-Off Delay Time R G = 5 Ω ns t f Turn-Off Fall Time ns Q g Total Gate Charge nc Q gs Gate-Source Charge = 70 V, I D = A = 0 V nc Q gd Gate-Drain Charge nc Source-Drain Diode Maximum Ratings and Characteristics I S Continuous Source-Drain Diode Forward Current I SM Pulsed Source-Drain Diode Forward Current V SD Source-Drain Diode Forward Voltage I S = A, = 0 V V trr Reverse Recovery Time I S = A, = 0 V ns Qrr Reverse Recovery Charge di F /dt = 00 A/μs μc Notes ;. Repetitive Rating : Pulse width limited by maximum junction temperature. I AS =A, =50V, R G =5Ω, Starting T J =5 C 3. Pulse Test : Pulse Width 300μs, Duty Cycle % A SEMIHOW REV.A0, April 08

3 Typical Characteristics I D, Drain Current [A] R DS(ON) [Ω] , Drain-Source Voltage [V] Figure. On Region Characteristics 0.0 0V 9.0 0V 8V V 7.0 6V 5.5V 5V I D, Drain Current [A] I F [A] E+0 E+0 E+00 E-0 E-0 E , Gate-Source Voltage [V] Figure. Transfer Characteristics = 0 V. 300us Pulse Test..0. = 0 V. T J = I D [A] E-04 E V SD [V]. = 0 V. 300us Pulse Test Figure 3. On Resistance Variation vs Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature 000 Capacitances [pf] Ciss Coss Crss Drain-Source Voltage [V]. = 0 V. f = MHz [V] Q G [nc] 450V 70V 80V. I D = A Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics SEMIHOW REV.A0, April 08

4 Typical Characteristics (continued) I D [A] B VDSS (Normalized) = 0 V. I D = 50 ua T J [ ] Figure 7. Breakdown Voltage Variation vs Temperature DC 0ms ms 00us 0us R DS(on) (Normalized) I D [A] = 0 V. I D = A T J [ ] Figure 8. On-Resistance Variation vs Temperature 0.0. T C = 5. T J(MAX) = Single Pulse [V] Figure 9. Maximum Safe Operating Area T C [ ] Figure 0. Maximum Drain Current vs Case Temperature Z θjc [K/W] single pulse E t P [S] Figure. Transient Thermal Response Curve SEMIHOW REV.A0, April 08

5 V 00nF 3mA 50KΩ 300nF Fig. Gate Charge Test Circuit & Waveform Same Type as Fig 3. Resistive Switching Test Circuit & Waveforms R L 0V Q gs 90% Q g Q gd Charge R G ( 0.5 rated ) 0V V in 0% t d(on) t r t d(off) tf t on t off Fig 4. Unclamped Inductive Switching Test Circuit & Waveforms L E AS = ---- L L I AS BS BS -- I D BS I AS R G I D (t) 0V (t) t p Time SEMIHOW REV.A0, April 08

6 Fig 5. Peak Diode Recovery dv/dt Test Circuit & Waveforms R G I S Driver + _ Same Type as L dv/dt controlled by RG I S controlled by pulse period ( Driver ) D = Gate Pulse Width Gate Pulse Period 0V I FM, Body Diode Forward Current I S ( ) di/dt I RM Body Diode Reverse Current ( ) Body Diode Recovery dv/dt V f Body Diode Forward Voltage Drop SEMIHOW REV.A0, April 08

7 Package Dimension 5.87± ±0.0.47max.54typ.54typ 0.6±0.0 TO-0F φ3.8± ±0.0.4± ± ± ±0.0.54± ± ±0.0 Pin hole.76± ±0.0 φ3.8± ±0.0.54± ± ± ±0.0.4± ±0.0 TO-0F-FM(Full Mold).76±0.0.47max 9.75±0.0.54typ.54typ 0.80± ±0.0 SEMIHOW REV.A0, April 08