TO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
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1 N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested Gate 2. Drain 3. Source General Description This power MOSFET is produced with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics. This power MOSFET is usually used at high efficient DC to DC converter block and SMPS. It s typical application is TV and monitor. BS : 200V I D : 8A R DS(ON) : 0.8ohm 2 3 Order Codes Item Sales Type Marking Package Packaging SW P 640 TUBE 2 SW W 640 TUBE Absolute maximum ratings Symbol Parameter Value S Drain to Source Voltage 200 V I D Continuous Drain Current (@T C =25 o C) 8* A Continuous Drain Current (@T C =00 o C).4* A I DM Drain current pulsed (note ) 72 A V GS Gate to Source Voltage ± 30 V E AS Single pulsed Avalanche Energy (note 2) mj E AR Repetitive Avalanche Energy (note ) mj dv/dt Peak diode Recovery dv/dt (note 3) V/ns P D Total power dissipation (@T C =25 o C) W Derating Factor above 25 o C.9.96 W/ o C T STG, T J Operating Junction Temperature & Storage Temperature -55 ~ + 50 o C T L Maximum Lead Temperature for soldering purpose, /8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol Parameter Unit 300 o C Value R thjc Thermal resistance, Junction to case o R thcs Thermal resistance, Case to Sink o R thja Thermal resistance, Junction to ambient o Unit Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan Rev. 2.0 /5
2 Electrical characteristic ( T C = 25 o C unless otherwise specified ) Symbol Parameter Test conditions Min. Typ. Max. Unit Off characteristics BS Drain to source breakdown voltage V GS =0V, I D =250uA V ΔBS Breakdown voltage temperature / ΔT J coefficient I D =250uA, referenced to 25 o C V/ o C I DSS I GSS Drain to source leakage current =200V, V GS =0V - - ua =60V, T C =25 o C ua Gate to source leakage current, forward V GS =30V, =0V na Gate to source leakage current, reverse V GS =-30V, =0V na On characteristics V GS(TH) Gate threshold voltage =V GS, I D =250uA V R DS(ON) Drain to source on state resistance V GS =0V, I D = 9A Ω Gfs Forward Transconductance VDS = 40 V, ID = 9A S Dynamic characteristics C iss Input capacitance C oss Output capacitance V GS =0V, =25V, f=mhz pf C rss Reverse transfer capacitance t d(on) Turn on delay time tr Rising time =00V, I D =8A, R G =25Ω (note 4,5) t d(off) Turn off delay time ns t f Fall time Q g Total gate charge Q gs Gate-source charge =60V, V GS =0V, I D =8A (note 4,5) nc Q gd Gate-drain charge Source to drain diode ratings characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit I S Continuous source current Integral reverse p-n Junction A I SM Pulsed source current diode in the MOSFET A V SD Diode forward voltage drop. I S =8A, V GS =0V V T rr Reverse recovery time I S =8A, V GS =0V, ns Q rr Breakdown voltage charge di F /dt=00a/us uc. Notes. Repeatitive rating : pulse width limited by junction temperature. 2. L = 3.7mH, I AS = 8A, = 50V, R G =25Ω, Starting T J = 25 o C 3. I SD 8A, di/dt = 00A/us, BS, Staring T J =25 o C 4. Pulse Test : Pulse Width 300us, duty cycle 2% 5. Essentially independent of operating temperature. Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan Rev /5
3 BVDSS, (Normalized Drain-Source Breakdown Voltage RDSON, (Normalized Drain-Source ON resistance Vgs, Gate Source Voltage(V) SAMWIN Fig.. On-state characteristics Fig. 2. On-resistance variation vs. drain current and gate voltage VGS=0V Notes:. 250μs Pulse Test 2. T=25 3. VGS 2~0V Step=V VGS=20V Fig. 3. Gate charge characteristics Fig. 4. On state current vs. diode forward voltage VDS=60V Qg, Total Gate Charge (nc) Fig 5. Breakdown Voltage Variation vs. Junction Temperature Fig. 6. On resistance variation vs. junction temperature TJ Junction Temperture ( ) TJ Junction Temperture ( ) Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan Rev /5
4 Fig. 7. Maximum safe operating area Fig. 8. Transient thermal response curve Fig. 9. Gate charge test circuit & waveform Same type as 0V V GS Q G Q GS Q GD V GS 2mA Charge nc Fig. 0. Switching time test circuit & waveform R L 90% R GS V IN 0% 0% 0V IN t d(on) t r t d(off) t f t ON t OFF Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan Rev /5
5 Fig.. Unclamped Inductive switching test circuit & waveform Fig. 2. Peak diode recovery dv/dt test circuit & waveform + V GS (DRIVER) 0V I S - L I S () di/dt I RM R G Diode reverse current 0V GS Same type as () Diode recovery dv/dt V F *. dv/dt controlled by RG *. Is controlled by pulse period Body diode forward voltage drop Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved. Jan Rev /5
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
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UNISONIC TECHNOLOGIES CO., LTD 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
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UNISONIC TECHNOLOGIES CO., LTD 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation
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Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
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z SMK0990FD Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =900V Low gate charge: Q g =52nC (Typ.) Low drain-source On resistance: R DS(on) =1.4Ω
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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R240S Rev. 1.1 Aug. 2017 SSP80R240S/SSF80R240S/SSB80R240S 800V N-Channel
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General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
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UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
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UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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UNISONIC TECHNOLOGIES CO., LTD 12A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors (MOSFET) which are produced using UTC s proprietary,
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
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UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
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UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features BV DDS =600V (Min.) Low gate charge: Q g =41nC (Typ.) Low drain-source On resistance: R DS(on) =0.65Ω (Max.) 100% avalanche tested RoHS
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UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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UNISONIC TECHNOLOGIES CO., LTD 7A, 700V N-CHANNEL POWER MOSFET TO-220 TO-220F DESCRIPTION The UTC 7N70 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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