MDP15N075 Single N-channel Trench MOSFET 150V, 120A, 7.5mΩ

Transcription

1 General Description MDP15N75 Single N-channel Trench MOSFET 15V, 1A, 7.5mΩ The MDP15N75 uses advanced MagnaChip s MV MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Low Power Drives of E-bike (E-Vehicles), DC/DC converter, and general purpose applications. Features = 15V = = 1V Very low on-resistance R DS(ON) < 7.5 = 1V % UIL Tested % Rg Tested G D TO-2 S Absolute Maximum Ratings (Ta = 25 o C) Characteristics Symbol Rating Unit Drain-Source Voltage S 15 V Gate-Source Voltage S ± V T C=25 o C (Silicon Limited) 144 Continuous Drain Current (1) T C=25 o C (Package Limited) 1 T C= o C 91 A Pulsed Drain Current (3) M 48 Power Dissipation T C=25 o C P D 312 T C= o C 125 W Single Pulse Avalanche Energy (2) E AS 45 mj Junction and Storage Temperature Range T J, T stg -55~15 o C Thermal Characteristics Characteristics Symbol Rating Unit Thermal Resistance, Junction-to-Ambient (1) R θja 62.5 Thermal Resistance, Junction-to-Case R θjc.4 o C/W

2 Ordering Information Part Number Temp. Range Package Packing RoHS Status MDP15N75TH -55~15 o C TO-2 Tube Halogen Free Electrical Characteristics (T J =25 o C) Characteristics Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage BS = 25μA, = V V Gate Threshold Voltage (th) =, = 25μA Drain Cut-Off Current SS = 1V, = V μa Gate Leakage Current I GSS = ±V, = V - - ±.1 Drain-Source ON Resistance R DS(ON) = 1V, = 5A mω Forward Transconductance g fs = 1V, = A S Dynamic Characteristics Total Gate Charge Q g Gate-Source Charge Q gs = 5V, = 5A, = 1V nc Gate-Drain Charge Q gd Input Capacitance C iss - 6,2 - Output Capacitance C oss = V, = V, f = 1.MHz - 2,2 - pf Reverse Transfer Capacitance C rss Turn-On Delay Time t d(on) - - Rise Time t r = 1V, = 5V, Turn-Off Delay Time t d(off) = 5A, R G = 3.Ω ns Fall Time t f - - Gate Resistance Rg f=1 MHz Ω Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage V SD I S = 5A, = V V Body Diode Reverse Recovery Time t rr I F = 5A, dl/dt = A/μs ns Body Diode Reverse Recovery Charge Q rr nc Note : 1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25 is silicon limited 2. E AS is tested at starting Tj = 25, L = 1.mH, I AS = 3.A, = 1V. 3. Pulse width limited by TJmax

3 R, Reverse Drain Current [A] R DS(ON), (Normalized) Drain-Source On-Resistance R DS(ON),[ط m ] Drain-Source On-Resistance [ظ m ] Drain-Source On-Resistance V = 1V 1.V 9.V Fig.1 On-Region Characteristics 1. = 1 V 2. = 1 A 8.V 7.V 6.V 5.V, Drain-Source Voltage [V] = 1V Fig.2 On-Resistance Variation with Drain Current and Gate Voltage = A 1. T A ة 25 = T J, Junction Temperature [ o C] , Gate to Source Volatge [V] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 9 = 1V = V T A ة 25 = 1 T A ة 25 = , Gate-Source Voltage [V] Fig.5 Transfer Characteristics V SD, Source-Drain voltage [V] Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature

4 Z èja (t), Thermal Response, Gate-Source Voltage [V] Capacitance [pf] Note : ط = 5A = 5V 6 8 Fig.7 Gate Charge Characteristics Operation in This Area is Limited by R DS(on) Q G, Total Gate Charge [nc] 1 us 1 us us C rss C oss C iss C iss = C gs + C gd (C ds = shorted) C oss = C ds + C gd C rss = C gd, Drain-Source Voltage [V] ; Notes ط 1. = V 2. f = 1 MHz Fig.8 Capacitance Characteristics 1 1 ms 1 ms DC Single Pulse T J =Max rated T C ة 25 = , Drain-Source Voltage [V] T C [ة ], Case Temperature Fig.9 Maximum Safe Operating Area Fig.1 Maximum Drain Current vs. Case Temperature 1 D= single pulse Duty Factor, D=t 1 /t 2 PEAK T J = P DM * Z èjc * R èjc (t) + T C t 1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve Package Dimension

5 3 Leads, TO-2 Dimensions are in millimeters unless otherwise specified

6 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd.