Product Summary. BV DSS typ. 84 V. R DS(ON) typ. 6.8 mω I D 60 A
|
|
- Rosalyn Patterson
- 5 years ago
- Views:
Transcription
1 RM60N75LD N-Channel Enhancement Mode Power MOSFET General Description The RM60N75LD uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. Product Summary BV DSS typ. 84 V R DS(ON) typ. 6.8 mω max. 8.5 mω I D 60 A Features V DS =75V I D =60A@ V GS =10V R DS(ON) V GS =10V Special process technology for high ESD capability Special designed for Convertors and power controls High density cell design for ultra low Rdson Fully characterized Avalanche voltage and current 100% UIS TESTED! Good stability and uniformity with high E AS Excellent package for good heat dissipation Application Power switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply D G S TO-252-2L top view Schematic diagram Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 60N75 RM60N75LD TO-252-2L Table 1. Absolute Maximum Ratings (T C =25 ) Parameter Symbol Value Unit Drain-Source Voltage (V GS =0V V DS 75 V Gate-Source Voltage (V DS =0V) V GS ±20 V Drain Current (DC) at Tc=25 I D (DC) 60 A Drain Current (DC) at Tc=100 I D (DC) 42 A Drain Current-Continuous@ Current-Pulsed (Note 1) I DM (pluse) 310 A Peak diode recovery voltage dv/dt 30 V/ns Maximum Power Dissipation(Tc=25 ) P D 140 W Derating factor 0.95 W/ Single pulse avalanche energy (Note 2) E AS 300 mj Operating Junction and Storage Temperature Range T J,T STG -55 To 175 Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature 2.EAS condition Tj=25,VDD=37.5V,VG=10V,L=0.5mH REV:O15
2 Table 2. Thermal Characteristic Parameter Symbol Value Unit Thermal Resistance Junction-to-Case Maximum R thjc 1.05 /W Thermal Resistance Junction-to-Ambient Maximum R thja 50 /W Table 3. Electrical Characteristics (T C =25 unless otherwise noted) On/off states Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250 A V Zero Gate Voltage Drain Current(Tc=25 ) I DSS V DS =75V,V GS =0V A Zero Gate Voltage Drain Current(Tc=125 ) I DSS V DS =75V,V GS =0V A Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na Gate Threshold Voltage V GS(th) V DS =V GS,I D =250 A V Drain-Source On-State Resistance R DS(ON) V GS =10V, I D =30A m Dynamic Characteristics Forward Transconductance g FS V DS =5V,I D =30A 66 - S Input Capacitance C lss PF V DS =25V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF C rss Total Gate Charge Q g V DS =30V,I D =30A, nc Gate-Source Charge Q gs V GS =10V 20 - nc Gate-Drain Charge 30 - nc Switching times Q gd Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =30V,I D =2A,R L = ns Turn-Off Delay Time t d(off) V GS =10V,R G = ns Turn-Off Fall Time t f ns Source- Drain Diode Characteristics Source-drain current(body Diode) I SD A Pulsed Source-drain current(body Diode) I SDM A Forward on voltage (Note 1) V SD Tj=25,I SD =30A,V GS =0V V Reverse Recovery Time (Note 1) t rr Tj=25,I F =75A,di/dt=100A/ s ns (Note 1) Reverse Recovery Charge Q nc rr Forward Turn-on Time t on Intrinsic turn-on time is negligible(turn-on is dominated by L S +L D ) Notes 1.Pulse Test: Pulse Width 300 s, Duty Cycle 1.5%, R G =25, Starting Tj=25
3 Test Circuit 1) E AS test circuit 2) Gate charge test circuit 3) Switch Time Test Circuit
4 RATING AND CHARACTERISTICS CURVES (RM60N75LD) Figure1. Safe operating area Figure2. Source-Drain Diode Forward Voltage Figure3. Output characteristics Figure4. Transfer characteristics Figure5. Static drain-source on resistance Figure6. R DS(ON) vs Junction Temperature
5 RATING AND CHARACTERISTICS CURVES (RM60N75LD) Figure7. BV DSS vs Junction Temperature Figure8. V GS(th) vs Junction Temperature Figure9. Gate charge waveforms Figure10. Capacitance Figure11. Normalized Maximum Transient Thermal Impedance
6 RECTRON Marking on the body Rectron Logo Year Code (Y: ) 6 0 N X X Part No. Week code (WW:01~52)
7 TO-252 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A b c D D D TYP TYP. E e L L TYP TYP. L L TYP TYP. L h V TYP TYP.
8 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
Product Summary. BV DSS typ. 84 V R DS(ON) max. 8.0 mω I D 80 A
SIAI N-Channel Enhancement Mode Power MOSFET General Description The S75NF75 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
More informationN-Channel Super Junction Power MOSFET
RM21N650T7 N-Channel Super Junction Power MOSFET General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super
More informationProduct Summary. BV DSS typ. 80 V R DS(ON) max. 4 mω I D 200 A
N-Channel Enhancement Mode Power MOSFET General Description The YMP200N08 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use
More informationRM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information
RM4503S8 N and P-Channel Enhancement Mode Power MOSFET Description The RM4503S8 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The SOP-8 package is universally preferred
More informationRM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information
RM1216 P-Channel Enhancement Mode Power MOSFET Description The RM1216 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages.this device is suitable
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationElectrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol
N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationFNK N-Channel Enhancement Mode Power MOSFET
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of
More informationSchematic diagram R DS(ON) < V GS =10V. Marking and pin assignment Uninterruptible power supply
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 85H21 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in automotive applications
More informationParameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRM1002. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Marking:1002
RM1002 N-Channel Enhancement Mode Power MOSFET Description The 1002 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More information3000/Tape&Reel. 2 P D Maximum Power Dissipation TA = 75 o C 1.44 T J, T stg Operating Junction and Storage Temperature Range
DS = 30 R DS(ON), gs @10, I ds @8.5A = 38mΩ R DS(ON), gs @4.5, I ds @5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity EZ TO
N-Channel Trench Power MOSFET General Description The EZ8590 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R DS(ON) is suitable
More informationDevice Marking Device Device Package Reel Size Tape width Quantity
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent DS(ON) with low gate charge. It can be used in a wide variety of applications. General
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationPE6018. N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Absolute Maximum Ratings (T C =25 unless otherwise noted)
N-Channel Enhancement Mode Power MOSFET Description The PE6018 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It D can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE8580 NCE8580 TO-220-3L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM60N08 HM60N08 TO-220-3L - - Parameter Symbol Limit Unit
N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationV DS =60V,I D =20A R DS(ON) V GS =10V Schematic diagram
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationHMS21N70,HMS21N70F. N-Channel Super Junction Power MOSFET II. General Description. Features. Application. Schematic diagram
N-Channel Super Junction Power MOSFET II General Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction
More informationN-Channel Super Junction Power MOSFET Ⅲ
N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE3080K NCE3080K TO-252-2L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM4884A HM4884A SOP Parameter Symbol Limit Unit
Dual N-Channel Enhancement Mode Power MOSFET Description The HM4884A uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE30P50G NCE30P50G DFN 5x6 EP - - -
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE6990 NCE6990 TO unless otherwise noted)
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationN-Channel ENHANCEMENT MODE POWER MOSFET 0V
PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION
More informationNCE0250D. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE1520K NCE1520K TO-252-2L - - -
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE82H110D NCE82H110D TO-263-2L - - -
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationNCE7190. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE30H21 NCE30H21 TO Parameter Symbol Limit Unit
NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE3090 NCE3090 TO-220-3L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationV DS =30V,I D =35A R DS(ON) < V GS =10V R DS(ON) < V GS =4.5V Schematic diagram
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE85H21T NCE85H21T TO Parameter Symbol Limit Unit
NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in Automotive applications and
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE60P12K NCE60P12K TO-252-2L - - -
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.this device is well suited
More informationNCE6005AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
More informationNCE6012AS. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationYJS12N10A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary V DS I D R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =6V) 100% UIS Tested 100% VDS Tested 100V 12A
More informationNCE0208IA. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationMDI5N40/MDD5N40 N-Channel MOSFET 400V, 3.4 A, 1.6Ω
General Description The MDI5N / MDD5N use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDI5N is suitable device for
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE01P13K NCE01P13K TO-252-2L Parameter Symbol Limit Unit
NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE01P30 NCE01P30 TO-220-3L Parameter Symbol Limit Unit
NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationFeatures V DS = 700V I D = 5.0A R DS(ON) 1.8Ω. Applications. Characteristics Symbol Rating Unit
General Description The MDIBN7C use advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDIBN7C is suitable device for SMPS,
More informationNCE65T260D,NCE65T260,NCE65T260F
N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super
More informationHMS5N90I/HMS5N90K. N-Channel Super Junction Power MOSFET Ⅲ. General Description. Features
N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super
More informationTSM6866SD 20V Dual N-Channel MOSFET
TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V
More informationTSM2307CX 30V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
More informationP-Channel 55-V (D-S), 175 C MOSFET
New Product SUP/SUB75P5-8 P-Channel 55-V (D-S), 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) I D (A) 55.8 75 a TO-22AB S TO-263 G DRAIN connected to TAB G D S Top View SUP75P5-8 G D S Top View SUB75P5-8 D P-Channel
More informationNCE40P13S. NCE P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More informationTO-220F MDF Series S. Characteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V.
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP8818AS NCEP8818AS SOP-8 Ø330mm 12mm 2500 units
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 0102 NCE0102 SOT-23 Ø180mm 8 mm 3000 units
Pb Free Product http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can
More informationCharacteristics Symbol Rating Unit Drain-Source Voltage V DSS 650 V Gate-Source Voltage V GSS ±30 V. T C =25 o C I D
General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUDN-5L PRODUCT SUMMARY V DS (V) r DS(on) ( ) (A) Q g (Typ). @ V GS = V.5.5 @ V GS =.5 V. 7.7 TO-5 D Drain Connected to Tab G G D S Order Number: Top View SUDN-5L SUDN-5L
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 48 @ V GS = -10V -5.3-30 79 @ V GS = -4.5V -4.1 Features Advance Trench Process
More informationN-Channel 30-V (D-S) 175 C MOSFET
N-Channel 3-V (D-S) 75 C MOSFET SUP/SUB85N3-4P PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) (A) a.43 @ V GS = V 85 a 3.7 @ V GS = 4.5 V 85 a TO-22AB FEATURES TrenchFET Power MOSFET 75 C Maximum Junction
More informationTSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
More informationTSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process
More informationSE2305. SOT-23 Plastic-Encapsulate MOSFETS WILLAS ELECTRONIC CORP. P-Channel 8-V(D-S) MOSFET. FEATURE TrenchFET Power MOSFET SOT-23
P-Channel 8-V(D-S) MOSFET FEATURE TrenchFET Power MOSFET SOT-23 APPLICATIONS Load Switch for Portable Devices DC/DC Converter 1. GATE 2. SOURCE 3. DRAIN MARKING: S5 Maximum ratings ( unless otherwise noted)
More informationCharacteristics Symbol Rating Unit
General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching
More informationYJG85G06A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID ID (Package limited) RDS(ON)( at VGS=10V) RDS(ON)( at VGS=4.5V) 100% UIS Tested 100% VDS Tested 60V 130A 85A
More informationDevice Marking Device Device Package Reel Size Tape width Quantity HM5P55R HM5P55R SOT-223 Ø330mm 12mm 2500 units. Parameter Symbol Limit Unit
P-Channel Enhancement Mode Power MOSFET Description The HM5P55R uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationMDD4N25 N-Channel MOSFET 250V, 3.0A, 1.75Ω
MDDN5 N-Channel MOSFET 5V, 3.A,.75Ω General Description The MDDN5 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationAdvanced Power Electronics Corp.
Advanced Power Electronics Corp AP65SL99AWL Halogen-Free Product N-CHANNEL ENHANCEMENT MODE POWER MOSFET % R g & UIS Test D V DS @ T j,max 7V Fast Switching Characteristic R DS(ON) 99mΩ 3 Simple Drive
More informationMDHT4N20Y N-Channel MOSFET 200V, 0.85A, 1.35Ω
MDHTN0Y N-Channel MOSFET 00V, 0.85A,.35Ω General Description The MDHTN0Y uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationPower switching application Hard Switched and High Frequency Circuits Uninterruptible Power Supply Marking and pin Assignment
Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationMDHT7N25 N-Channel MOSFET 250V, 1.4A, 0.55Ω
General Description The MDHT7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDHT7N25 is suitable device for SMPS,
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD12N3AT, TTP12N3AT 3V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in
More information40V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 40V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters
More informationNCE65T180D,NCE65T180,NCE65T180F
N-Channel Super Junction Power MOSFET Ⅲ General Description The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super
More informationD1/D2 S1 G1 S2 G2 TO-252-4L
Complementary N and P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Good Thermal Performance Fast Switching Performance RoHS-compliant, halogen-free Description S1 G1 S2 G2 D1/D2 TO-252-4L
More informationMDD7N25 N-Channel MOSFET 250V, 6.2A, 0.55Ω
MDD7N25 N-Channel MOSFET 25V,.2A,.55Ω General Description The MDD7N25 uses advanced Magnachip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality.
More informationN-Channel 75-V (D-S) 175 C MOSFET
New Product SUP/SUB85N8-8 N-Channel 75-V (D-S) 75 C MOSFET V (BR)DSS (V) r DS(on) ( ) (A) 75.8 @ V GS = V 85 a TO-22AB D TO-263 G DRAIN connected to TAB G D S Top View SUP85N8-8 G D S Top View SUB85N8-8
More information20V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTE8N2AT 2V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationTSM4936D 30V N-Channel MOSFET
SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 36 @ V GS = 10V 5.9 30 53 @ V GS = 4.5V 4.9
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationNot Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP0178AK NCEP0178AK TO-252-2L Parameter Symbol Limit Unit
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More information100V P-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TTD18P1AT, TTP18P1AT 1V P-Channel Trench MOSFET APPLICATIONS Load Switches Battery Switch
More informationTSM V N-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
More informationTSM2N60E 600V, 2A, 4Ω N-Channel Power MOSFET
TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source Key Parameter Performance Parameter Value Unit V DS 600 V R DS(on) (max) 4 Ω Qg (typ) 9.5 nc Features 100% Avalanche Tested G-S ESD
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCEP4085EG NCEP4085EG DFN5X6-8L - - -
http://www.ncepower.com NCE N-Channel Super Trench Power MOSFET Description The uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
More informationNCE0203S. NCE N-Channel Enhancement Mode Power MOSFET. Description. General Features. Application
http://www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide
More information200V N-Channel MOSFET
2V N-Channel MOSFET TMA18N2H,TMP18N2H FEATURES Fast switching 1% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More information