RM4503S8. N and P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package Marking and Ordering Information

Transcription

1 RM4503S8 N and P-Channel Enhancement Mode Power MOSFET Description The RM4503S8 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The SOP-8 package is universally preferred for all commercial industrial surface mount applications and suited for low voltage applications such as DC/DC converters. General Features N-Channel V DS = 30V,I D =10A R DS(ON) < V GS =4.5V R DS(ON) < V GS =10V P-Channel V DS = -30V,I D = -9.1A R DS(ON) < V GS =-4.5V R DS(ON) < V GS =-10V N-channel Schematic diagram P-channel High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment Application Battery protection Load switch Power management SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity 4503 RM4503S8 SOP mm 12mm 2500 units Absolute Maximum Ratings (T A =25 unless otherwise noted) Parameter Symbol N-Channel P-Channel Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ±20 ±20 V Continuous Drain Current T A =25 I D T A = Pulsed Drain Current (Note 1) I DM A Maximum Power Dissipation T A =25 P D W Operating Junction and Storage Temperature Range T J,T STG -55 To To REV:O15 A

2 Thermal Characteristic N-Ch 50 Thermal Resistance,Junction-to-Ambient (Note2) R JA P-Ch 50 /W N-CH Electrical Characteristics (T A =25 Off Characteristics unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V I D =250 A V Zero Gate Voltage Drain Current I DSS V DS =30V,V GS =0V A Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250 A V V GS =10V, I D =10A Drain-Source On-State Resistance R DS(ON) V GS =4.5V, I D =5A Forward Transconductance g FS V DS =5V,I D =10A S Dynamic Characteristics (Note4) Input Capacitance C lss PF V DS =15V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF (Note 4) Switching Characteristics C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =25V,I D =1A ns Turn-Off Delay Time t d(off) V GS =10V,R GEN = ns Turn-Off Fall Time t f ns Total Gate Charge Q g V DS =15V,I D =10A, nc Gate-Source Charge Q gs V GS =4.5V nc Gate-Drain Charge nc Drain-Source Diode Characteristics Q gd =5A Diode Forward Voltage (Note 3) V SD V GS =0V,I S =6A V m m

3 P-CH Electrical Characteristics (T A =25 Off Characteristics unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS V GS =0V I D =-250 A V Zero Gate Voltage Drain Current I DSS V DS =-30V,V GS =0V A Gate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =-250 A V V GS =-10V, I D =-9.1A Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-5A Forward Transconductance g FS V DS =-15V,I D =-9.1A S Dynamic Characteristics (Note4) Input Capacitance C lss PF V DS =-15V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF (Note 4) Switching Characteristics C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =-15V, ID=-1A, ns Turn-Off Delay Time t d(off) V GS =-10V,R GEN = ns Turn-Off Fall Time t f ns Total Gate Charge Q g V DS =-15V,I D =-9.1A nc Gate-Source Charge Q gs V GS =-10V nc Gate-Drain Charge nc Drain-Source Diode Characteristics Q gd Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-6A V m m Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2 %. 4. Guaranteed by design, not subject to production

4 RATING AND CHARACTERISTICS CURVES (RM4503S8) Rdson On-Resistance( ) ID- Drain Current (A) ID- Drain Current (A) Figure 1 Output Characteristics Vgs Gate-Source Voltage (V) Figure 2 Transfer Characteristics Normalized On-Resistance Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Figure 4 Rdson- Junction Temperature Qg Gate Charge (nc) Figure 5 Gate Charge I D - Drain Current (A) Figure 3 Rdson- Drain Current Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward

5 RATING AND CHARACTERISTICS CURVES (RM4503S8) Figure 7 Capacitance vs Vds Figure 9 BV DSS vs Junction Temperature ID- Drain Current (A) C Capacitance (pf) Figure 8 Safe Operation Area Figure 10 V GS(th) vs Junction Temperature r(t),normalized Effective Transient Thermal Impedance Vth (V) Variance Normalized BVdss Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance

6 RATING AND CHARACTERISTICS CURVES (RM4503S8) t on t off t d(on) t r t d(off) t f V OUT 10% 90% INVERTED 90% 10% V IN 90% 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms Figure 3 Power Dissipation Figure 4 Drain Current ID- Drain Current (A) Rdson On-Resistance( ) PD Power(W) ID- Drain Current (A Figure 5 Output Characteristics I D - Drain Current (A) Figure 6 Drain-Source On-Resistance

7 RATING AND CHARACTERISTICS CURVES (RM4503S8) Vgs Gate-Source Voltage (V) Figure 7 Transfer Characteristics Figure 8 Drain-Source On-Resistance Vgs Gate-Source Voltage (V) Figure 9 Rdson vs Vgs Figure 10 Capacitance vs Vds Vgs Gate-Source Voltage (V) Is- Reverse Drain Current (A) Rdson On-Resistance( ) C Capacitance (pf) ID- Drain Current (A) Normalized On-Resistance Qg Gate Charge (nc) Figure 11 Gate Charge Vsd Source-Drain Voltage (V) Figure 12 Source- Drain Diode Forward

8 RATING AND CHARACTERISTICS CURVES (RM4503S8) Figure 13 Safe Operation Area r(t),normalized Effective Transient Thermal Impedance ID- Drain Current (A) Square Wave Pluse Duration(sec) Figure 14 Normalized Maximum Transient Thermal Impedance

9 SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A A b c D E E e 1.270(BSC) 0.050(BSC) L

10 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.