N-Channel ENHANCEMENT MODE POWER MOSFET 0V

Transcription

1 PRIMARY CHARACTERISTICS BVD DSS 0V PR-PAK PACKAGE R DS(ON) I D. mω A FEATURES Low On-Resistance Low Input Capacitance Green Device Available Low Miller Charge 100% EAS and 100% Rg Guaranteed DESCRIPTION The uses advanced Trench technology and designs to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. The meet the RoHS and Green Product requirement, 100% EAS and 100% Rg guaranteed with full function reliability approved. Absolute Maximum Ratings Parameter Symbol Ratings Unit Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ±20 V I C = A Continuous Drain Current 1 I C =70 80 A Pulsed Drain Current 1 I DM 240 A Continuous Drain Current Total Power Dissipation I A =25 16 A I A =70 13 A P C =25 83 W P A = W Single Pulse Avalanche Energy, L=0.1mH E AS 140 mj Single Pulse Avalanche Current, L=0.1mH I AS 53 A Operating Junction and Storage Temperature Range T J, T STG -55 ~ +150 Thermal Data Parameter Symbol Conditions Max. Value Unit Thermal Resistance Junction-ambient 2 R θja Steady State 55 / W Thermal Resistance Junction-case 2 R θjc Steady State 1.5 /W P 1

2 Electrical Characteristics (Tj = 25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Drain-Source Breakdown Voltage BV DSS V V GS =0, I D =250uA Gate Threshold Voltage V GS(th) V V DS =V GS, I D =250uA Gate-Source Leakage Current I GSS - - ±100 na V GS = ±20V Drain-Source Leakage Current I DSS ua V DS =48V, V GS =0 Static Drain-Source On-Resistance R DS(ON) mω V GS =10V, I D =30A Total Gate Charge Q g Gate-Source Charge Q gs Gate-Drain ( Miller ) Change Q gd Turn-on Delay Time T d(on) Rise Time T r Turn-off Delay Time T d(off) Fall Time T f Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss nc ns pf I D =30A V DS =30V V GS =10V V DS =30V I D =30A V GS =10V R G =3Ω V GS =0V V DS =30V f=1.0mhz Gate Resistance Rg Ω f=1.0mhz Guaranteed Avalanche Characteristics Parameter Symbol Min. Typ. Max. Unit Test Conditions Single Pulse Avalanche Energy 4 EAS mj VDD=30V, L=0.1mH, IAS=40A Source-Drain Diode Parameter Symbol Min. Typ. Max. Unit Test Conditions Diode Forward Voltage V SD V I S =20A, V GS =0V Reverse Recovery Time t rr ns Reverse Recovery Charge Q rr 53 - nc I F =30A, di/dt=100a/μs, T J =25 Notes: 1. The data tested by pulsed, pulse width 300us, duty cycle 2%. 2. R θja is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R θjc is guaranteed by design while R θca is determined by the user's board design. R θja shown below for single device operation on FR-4 in still air. 3. Package Limitation current is 100A. 4. The Min. value is 100% EAS tested guarantee. P 2

3 Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 On-Resistance vs. Drain Current Fig.4 Normalized R DSON vs. T J Fig.5 Normalized V GS(th) vs. T J Fig.6 Forward Characteristics of Reverse P 3

4 Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristic Fig.9 Safe Operating Area Fig.10 Power Dissipation Fig.11 Drain Current vs. T J Fig.12 Transient Thermal Impedance P 4

5 Mounting and Storage Conditions(Reflow soldering Temperature profile) Willas has set the following requirements for the heat resistance of components. [Assumption] Moisture absorption prior to the reflow/flow soldering of components in dry pack. With components in dry pack, reflow/flow soldering shall be completed within 168 hours after unpacking (Storage environment:30 C 70%RH) peak 230 C E 217 C *3 Temperature [ C] Preheating Room temp. A B C D 180 C 120 C Time [sec] Conditions Components size 1 28mm or less Unit A Temp. rise gradient C/sec B Heating time sec Heating temperature C C Temp. rise gradient C/sec D Time over 230 C 90 sec E Peak temperature 260 C Peak-temp. hold time 1-5 sec Soldering 2 times *1.Length or width, whichever is the greater outside dimension (length for a rectangular component) *2.Temperatures and time for A through E in the table above shall be measured on the top surface of the components size. *3.Time over 217 C be seconds. P 5

6 Outline Drawing REF. Millimeter Millimeter REF. Min. Max. Min. Max. A E A e 1.27 BSC. b H c Ref. L D G 0.60 Ref. F 1.40 Ref. K 4.00 Ref. Dimensions in inches and (millimeters) Rev.A P 6

7 Suggested Soldering Pad Layout. (. ). (. ).024(0.62). ( ) Dimensions in inches and (millimeters) RevA P 7

8 Reel Taping Specification - Surface Mount Device Package Packing Option Immediate Intermediate Intermediate Outer box Quantity Container Quantity Quantity PR-PAK 13" Reel 3000 pcs (reel) Box 6000 pcs (2 reels) 30 K (5Box) P 8

9 Packing Method Trailer>17cm Leader>40cm LABEL LABEL P 9

10 Ordering Information: Device PN -T (1) H (2) -WS Note: (1) Packing code, Tape & Reel Packing (2) Haloge free product for packing code suffix H Packing Tape&Reel: 3 Kpcs/Reel ***Disclaimer*** WILLAS reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. WILLAS or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on WILLAS data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. WILLAS does not assume any liability arising out of the application or use of any product or circuit. This is the preliminary specification. WILLAS products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of WILLAS. Customers using or selling WILLAS components for use in such applications do so at their own risk and shall agree to fully indemnify WILLAS Inc and its subsidiaries harmless against all claims, damages and expenditures. P 10