Product Summery. Applications

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1 General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The QM3056M6 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Product Summery BVDSS RDSON ID 30V 4.2 mω 103A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch PRPAK5X6 Pin Configuration Fig.12 Unclamped Inductive Switchin Absolute Maximum Ratings S S S G Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V I D@T C=25 Continuous Drain Current, V 10V 1,7 103 A I D@T C=100 Continuous Drain Current, V 10V 1 65 A I D@T A=25 Continuous Drain Current, V 10V A I D@T A=70 Continuous Drain Current, V 10V 1 14 A I DM Pulsed Drain Current A EAS Single Pulse Avalanche Energy mj I AS Avalanche Current 52 A P D@T C=25 Total Power Dissipation 4 70 W P D@T A=25 Total Power Dissipation 4 2 W T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction-Ambient /W R θjc Thermal Resistance Junction-Case /W Rev A.01 D

2 Electrical Characteristics (T J =25, unless otherwise noted) QM3056M6 BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=250uA V BV DSS/ T J BVDSS Temperature Coefficient Reference to 25, I D=1mA V/ R DS(ON) Static Drain-Source On-Resistance 2 V GS=10V, I D=30A V GS=4.5V, I D=15A m V GS(th) Gate Threshold Voltage V V GS=V DS, I D =250uA V GS(th) V GS(th) Temperature Coefficient mv/ I DSS V DS=24V, V GS=0V, T J= Drain-Source Leakage Current ua V DS=24V, V GS=0V, T J= I GSS Gate-Source Leakage Current V GS=±20V, V DS=0V ±100 na gfs Forward Transconductance V DS=5V, I D=30A S R g Gate Resistance V DS=0V, V GS=0V, f=1mhz Q g Total Gate Charge (4.5V) Q gs Gate-Source Charge V DS=15V, V GS=4.5V, I D=15A nc Q gd Gate-Drain Charge T d(on) Turn-On Delay Time T r Rise Time V DD=15V, V GS=10V, R G= ns T d(off) Turn-Off Delay Time I D=15A T f Fall Time C iss Input Capacitance C oss Output Capacitance V DS=15V, V GS=0V, f=1mhz pf C rss Reverse Transfer Capacitance Guaranteed Avalanche Characteristics EAS Single Pulse Avalanche Energy 5 V DD=25V, L=0.1mH, I AS=30A mj Diode Characteristics I S Continuous Source Current 1, A V G=V D=0V, Force Current I SM Pulsed Source Current 2, A V SD Diode Forward Voltage 2 V GS=0V, I S=1A, T J= V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge IF=30A, di/dt=100a/µs, T J= nc Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed, pulse width 300us, duty cycle 2% 3.The EAS data shows Max. rating. The test condition is V DD=25V,V GS=10V,L=0.1mH,I AS=52A 4.The power dissipation is limited by 150 junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation. 7.Package limitation current is 85A. 2

3 Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J 3

4 Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) 0.1 DUTY= SINGLE P DM T ON T D = T ON /T T Jpeak = T C +P DM XR θjc t, Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance V DS 90% 10% V GS T d(on) T r T d(off) T f T on T off Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4

5 Fig.12 Unclamped Inductive Switching Test Circuit & Waveforms 5

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