Product Summery. Applications
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- Wilfrid Black
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1 General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The QM3056M6 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline 100% EAS Guaranteed Green Device Available Product Summery BVDSS RDSON ID 30V 4.2 mω 103A Applications High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA Networking DC-DC Power System Load Switch PRPAK5X6 Pin Configuration Fig.12 Unclamped Inductive Switchin Absolute Maximum Ratings S S S G Symbol Parameter Rating Units V DS Drain-Source Voltage 30 V V GS Gate-Source Voltage ±20 V I D@T C=25 Continuous Drain Current, V 10V 1,7 103 A I D@T C=100 Continuous Drain Current, V 10V 1 65 A I D@T A=25 Continuous Drain Current, V 10V A I D@T A=70 Continuous Drain Current, V 10V 1 14 A I DM Pulsed Drain Current A EAS Single Pulse Avalanche Energy mj I AS Avalanche Current 52 A P D@T C=25 Total Power Dissipation 4 70 W P D@T A=25 Total Power Dissipation 4 2 W T STG Storage Temperature Range -55 to 150 T J Operating Junction Temperature Range -55 to 150 Thermal Data Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction-Ambient /W R θjc Thermal Resistance Junction-Case /W Rev A.01 D
2 Electrical Characteristics (T J =25, unless otherwise noted) QM3056M6 BV DSS Drain-Source Breakdown Voltage V GS=0V, I D=250uA V BV DSS/ T J BVDSS Temperature Coefficient Reference to 25, I D=1mA V/ R DS(ON) Static Drain-Source On-Resistance 2 V GS=10V, I D=30A V GS=4.5V, I D=15A m V GS(th) Gate Threshold Voltage V V GS=V DS, I D =250uA V GS(th) V GS(th) Temperature Coefficient mv/ I DSS V DS=24V, V GS=0V, T J= Drain-Source Leakage Current ua V DS=24V, V GS=0V, T J= I GSS Gate-Source Leakage Current V GS=±20V, V DS=0V ±100 na gfs Forward Transconductance V DS=5V, I D=30A S R g Gate Resistance V DS=0V, V GS=0V, f=1mhz Q g Total Gate Charge (4.5V) Q gs Gate-Source Charge V DS=15V, V GS=4.5V, I D=15A nc Q gd Gate-Drain Charge T d(on) Turn-On Delay Time T r Rise Time V DD=15V, V GS=10V, R G= ns T d(off) Turn-Off Delay Time I D=15A T f Fall Time C iss Input Capacitance C oss Output Capacitance V DS=15V, V GS=0V, f=1mhz pf C rss Reverse Transfer Capacitance Guaranteed Avalanche Characteristics EAS Single Pulse Avalanche Energy 5 V DD=25V, L=0.1mH, I AS=30A mj Diode Characteristics I S Continuous Source Current 1, A V G=V D=0V, Force Current I SM Pulsed Source Current 2, A V SD Diode Forward Voltage 2 V GS=0V, I S=1A, T J= V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge IF=30A, di/dt=100a/µs, T J= nc Note : 1.The data tested by surface mounted on a 1 inch 2 FR-4 board with 2OZ copper. 2.The data tested by pulsed, pulse width 300us, duty cycle 2% 3.The EAS data shows Max. rating. The test condition is V DD=25V,V GS=10V,L=0.1mH,I AS=52A 4.The power dissipation is limited by 150 junction temperature 5.The Min. value is 100% EAS tested guarantee. 6.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation. 7.Package limitation current is 85A. 2
3 Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source Fig.3 Forward Characteristics of Reverse Fig.4 Gate-Charge Characteristics Fig.5 Normalized V GS(th) vs. T J Fig.6 Normalized R DSON vs. T J 3
4 Fig.7 Capacitance Fig.8 Safe Operating Area 1 Normalized Thermal Response (RθJC) 0.1 DUTY= SINGLE P DM T ON T D = T ON /T T Jpeak = T C +P DM XR θjc t, Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance V DS 90% 10% V GS T d(on) T r T d(off) T f T on T off Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform 4
5 Fig.12 Unclamped Inductive Switching Test Circuit & Waveforms 5
SSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
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400V N-Channel MOSFET Features RDS(ON) (Max 1.00Ω) @ VGS=10V Gate Charge : 18.0 nc (Typical) Improved dv/dt capability / Fast switching 100% EAS Tested BVDSS RDS(ON) MAX ID 400V 1.00Ω 6A TO-220F PKG General
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DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
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6V NChannel AlphaSGT TM General Description Trench Power AlphaSGT TM technology Low R DS(ON) Low Gate Charge ESD protected Product Summary V DS I D (at V GS =V) R DS(ON) (at V GS =V) R DS(ON) (at V GS
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3V PChannel MOSFET General Description Latest Trench Power MOSFET technology Very Low R DS(ON) at 4.5V V GS Low Gate Charge High Current Capability RoHS and HalogenFree Compliant Application System/Load
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HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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SFG170N10xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
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HRLD15N1K / HRLU15N1K 1V N-Channel Trench MOSFET FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge : 8 nc (Typ.) Extended Safe
More informationElectrical Characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Vol
N-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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12 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 1 TO-220 ITO-220/TO-220F is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time,
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FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel
More informationTO-220. Item Sales Type Marking Package Packaging 1 SW P 640 SW640 TO-220 TUBE 2 SW W 640 SW640 TO-3P TUBE
N-channel MOSFET Features High ruggedness R DS(ON) (Max 0.8 Ω)@V GS =0V Gate Charge (Typical 35nC) Improved dv/dt Capability 00% Avalanche Tested 2 3 2 3. Gate 2. Drain 3. Source General Description This
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