RM1216. P-Channel Enhancement Mode Power MOSFET. Description. General Features. Application. Package marking and ordering information
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1 RM1216 P-Channel Enhancement Mode Power MOSFET Description The RM1216 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages.this device is suitable for use as a load switching application and a wide variety of other applications. General Features V DS = -12V,I D = -16A R DS(ON) < V GS =-2.5V R DS(ON) < V GS =-4.5V D G S Schematic diagram Advanced trench MOSFET process technology Ultra low on-resistance with low gate charge Pin assignment Application PWM applications Load switch Battery charge in cellular handset Package marking and ordering information DFN2X2-6L bottom view Device Marking Device Device Package Reel Size Tape Width Quantity 1216 RM1216 DFN2X2-6L Absolute maximum ratings (T C =25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -12 V Gate-Source Voltage VGS ±12 V Drain Current-Continuous I D -16 A Drain Current -Pulsed (Note 1) I DM -65 A Maximum Power Dissipation P D 18 W Operating Junction and Storage Temperature Range T J,T STG -55 To 150 Thermal Characteristic Thermal Resistance,Junction-to-Case (Note 2) R JC 6.9 /W REV:O15
2 Electrical characteristics (T A =25 unless otherwise noted) Off Characteristics Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage V (BR) DSS V GS =0V I D =-250 A V Zero Gate Voltage Drain Current I DSS V DS =-12V,V GS =0V A Gate-Body Leakage Current I GSS V GS =±12V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =-250 A V Drain-Source On-State Resistance R DS(ON) V GS =-4.5V, I D =-6.7A m V GS =-2.5V, I D =-6.2A m Forward Transconductance g FS V DS =-5V,I D =-6.7A S Dynamic Characteristics (Note4) Input Capacitance C lss PF V DS =-10V,V GS =0V, Output Capacitance C oss PF F=1.0MHz Reverse Transfer Capacitance PF Switching Characteristics (Note 4) C rss Turn-on Delay Time t d(on) ns Turn-on Rise Time t r V DD =-10V,I D =-1A ns Turn-Off Delay Time t d(off) V GS =-4.5V,R GEN = ns Turn-Off Fall Time t f ns Total Gate Charge Q g V DS =-6V,I D =-10A, nc Gate-Source Charge Q gs V GS =-4.5V nc Gate-Drain Charge nc Drain-Source Diode Characteristics Q gd Diode Forward Voltage (Note 3) V SD V GS =0V,I S =-8A V Diode Forward Current (Note 2) I S A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t 10 sec. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2 %. 4. Guaranteed by design, not subject to production
3 RATING AND CHARACTERISTICS CURVES (RM1216) t on t off t d(on) t r t d(off) t f V OUT 10% 90% INVERTED 90% 10% V IN 90% 50% 50% 10% PULSE WIDTH Figure 1:Switching Test Circuit Figure 2:Switching Waveforms ID- Drain Current (A) Threshold Voltage (V) Vds Drain-Source Voltage (V) Figure 3 Output Characteristics T J -Junction Temperature( ) Figure 4 Drain Current Rdson On-Resistance( ) Vg Rdson On-Resistance( ) s Gate-Source Voltage (V) Figure 5 Rdson vs Vgs I D - Drain Current (A) Figure 6 Drain-Source On-Resistance
4 RATING AND CHARACTERISTICS CURVES (RM1216) C Capacitance (pf) Is- Reverse Drain Current (A) Vds Drain-Source Voltage (V) Figure 7 Capacitance vs Vds Vsd Source-Drain Voltage (V) Figure 8 Source- Drain Diode Forward
5 DFN2X2-6L Package Information Notes 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact.
6 DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or use of any product or circuit. Rectron products are not designed, intended or authorized for use in medical, life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in such applications do so at their own risk and shall agree to fully indemnify Rectron Inc and its subsidiaries harmless against all claims, damages and expenditures.
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SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 36 @ V GS = 10V 5.9 30 53 @ V GS = 4.5V 4.9
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS 20 V V GS = 4.5V 33 R DS(on) (max) V GS = 2.5V 40 V GS = 1.8V 51 mω Q g 11 nc Features Advance Trench
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 55 @ V GS =-4.5V -3.2-20 80 @ V GS =-2.5V -2.7 130 @ V GS =-1.8V -2.0 Features Advance Trench Process Technology
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
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Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
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AMP6-6B P-Channel 6-V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed VDS (V) -6 PRODUCT SUMMARY r DS(on) (mω) 6 @ V GS = -V 7 @ V GS = -4.5V ID(A)
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NChannel SOT323 We declare that the material of product compliance with RoHS requirements. ESD Protected:1000V SOT 323 MAXIMUM RATINGS Rating Symbol Value Unit Simplified Schematic DrainSource Voltage
More informationNot Recommended. TSM V N-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 10V 5.8 30 43 @ V GS = 4.5V 5.0 Features Advance Trench Process Technology High Density Cell
More informationDevice Marking Device Device Package Reel Size Tape width Quantity NCE85H21T NCE85H21T TO Parameter Symbol Limit Unit
NCE N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in Automotive applications and
More informationDevice Marking Device Device Package Reel Size Tape width Quantity. HM6602 HM6602 SOT-23-6L Ø180mm 8 mm 3000 units
N and P-Channel Enhancement Mode Power MOSFET Description The HM6602 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a Battery protection
More informationAM9435P. Analog Power P-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = -10V V GS = -4.5V -5.
P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power
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SOP-8 Pin Definition: 1. Source 2. Source 3. Source 4. Gate 5, 6, 7, 8. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 25 @ V GS = 4.5V 4.5 20 30 @ V GS = 2.5V 3.5 65 @ V GS = 1.8V 2.0 Features Advance
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Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM
More informationNot Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance
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UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
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These miniature surface mount MOSFETs utilize a high cell density trench process to provide low r DS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters
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SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell
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