AM9435P. Analog Power P-Channel 30-V (D-S) MOSFET. PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = -10V V GS = -4.5V -5.

Transcription

1 P-Channel 3-V (D-S) MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low r DS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. Low r DS(on) Provides Higher Efficiency and Extends Battery Life Miniature SO-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range (±5) for battery pack applications PRODUCT SUMMARY V DS (V) r DS(on) m(ω) I D (A) V GS = -V V GS = -4.5V ABSOLUTE MAXIMUM RATINGS (T A = 5 o C UNLESS OTHERWISE NOTED) Parameter Symbol Maximum Units Drain-Source Voltage V DS -3 V Gate-Source Voltage V GS ±5 T A =5 o C ±6.5 Continuous Drain Current a I T A =7 o D C ±5. A Pulsed Drain Current b Continuous Source Current (Diode Conduction) a Power Dissipation a I DM ±3 I S -.6 A T A =5 o C 3. T A =7 o C. Operating Junction and Storage Temperature Range T J, T stg -55 to 5 P D W o C Parameter Symbol Maximum Units Maximum Junction-to-Case a t <= 5 sec R θjc 5 o C/W Maximum Junction-to-Ambient a t <= sec R θja 4 o C/W Notes a. Surface Mounted on x FR4 Board. b. Pulse width limited by maximum junction temperature

2 SPECIFICATIONS (T A = 5 o C UNLESS OTHERWISE NOTED) Parameter Symbol Test Conditions Limits Min Typ Max Unit Static Gate-Threshold Voltage V GS(th) V DS = V GS, I D = -5 ua - Gate-Body Leakage I GSS V DS = V, V GS = ±5 V ± na Zero Gate Voltage Drain Current I DSS V DS = -4 V, V GS = V - V DS = -4 V, V GS = V, T J = 55 o C -5 ua On-State Drain Current A I D(on) V DS = -5 V, V GS = - V -3 A Drain-Source On-Resistance A r DS(on) V GS = - V, I D = -5.7 A 49 V GS = -4.5 V, I D = -5. A 69 mω Forward Tranconductance A g fs V DS = -5 V, I D = -5.7 A 9 S Diode Forward Voltage V SD I S = -. A, V GS = V -.7 V Dynamic b Total Gate Charge Q g 6 V DS = -5 V, V GS = -4.5 V, Gate-Source Charge Q gs. I D = -5.7 A Gate-Drain Charge Q gd.7 nc Switching Turn-On Delay Time t d(on) Rise Time t r V DD = -5 V, R L = 5 Ω, I D = - A,.8 Turn-Off Delay Time t d(off) V GEN = - V, R G = 6Ω 53.6 ns Fall-Time t f 46 Notes a. Pulse test: PW <= 3us duty cycle <= %. b. Guaranteed by design, not subject to production testing. Analog Power (APL) reserves the right to make changes without further notice to any products herein. APL makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does APL assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in APL data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. APL does not convey any license under its patent rights nor the rights of others. APL products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the APL product could create a situation where personal injury or death may occur. Should Buyer purchase or use APL products for any such unintended or unauthorized application, Buyer shall indemnify and hold APL and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that APL was negligent regarding the design or manufacture of the part. APL is an Equal Opportunity/Affirmative Action Employer.

3 Typical Electrical Characteristics (P-Channel) -ID, DRAIN CURRENT (A) 3 VGS = -V -6.V -5.V -4.V -3.V -ID, DRAIN CURRENT (A) VDS = -5V TA = -55 o C 5 o C 5 o C VDS, DRAIN TO SOURCE VOLTAGE (V) Figure. On-Region Characteristics VGS, GATE TO SOURCE VOLTAGE (V) Figure. Body Diode Forward Voltage Variation with Source Current and Temperature RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V -6.V -V ID, DRAIN CURRENT (A) Figure 3. On Resistance Vs Vgs Voltage CAPACITANCE (pf) CRSS CISS COSS f = MHz VGS = V VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 4. Capacitance Characteristics Vgs Gate to Source Voltage ( V ) I D = Qg Gate Charge (nc) Normalized RDS(on) VGS = V ID = 5.7A TJ Juncation Temperature (C) Figure 5. Gate Charge Characteristics Figure 6. On-Resistance Variation with Temperature 3

4 Typical Electrical Characteristics (P-Channel) -IS, REVERSE DRAIN CURRENT (A).... VGS =V TA = 5 o C 5 o C VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 7. Transfer Characteristics RDS(ON), ON-RESISTANCE (OHM).5 ID = -5.7A TA = 5 o C VGS, GATE TO SOURCE VOLTAGE (V) Figure 8. On-Resistance with Gate to Source Voltage -Vth, GATE-SOURCE THRESTHOLD VOLTAGE (V) VDS = VGS ID = -5mA TA, AMBIENT TEMPERATURE (oc) P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE RqJA = 5C/W TA = 5C... t, TIME (sec) Figure 9. Vth Gate to Source Voltage Vs Temperature Figure. Single Pulse Maximum Power Dissipation.. D = Normalized Thermal Transient Junction to Ambient RqJA(t) = r(t) + RqJA RqJA = 5oC/W TJ - TA = P * RqJA(t) Duty Cycle, D = t / t SINGLE PULSE..... t, TIME (sec) Figure. Transient Thermal Response Curve P(p t t 4

5 Package Information SO-8: 8LEAD H x 45 5

6 Ordering information -T-XX A: Analog Power M: MOSFET 9435: Part number P: P-Channel T: Tape & reel XX: Blank: Standard PF: Leadfree 6