600V Super-Junction Power MOSFET

Transcription

1 600V Super-Junction Power MOSFET FEATURES l Very low FOM R DS(on) Q g l 100% avalanche tested l RoHS compliant APPLICATIONS l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply (UPS) l Power Factor Correction (PFC) Device Marking and Package Information Device TPA60R160M TPP60R160M TPV60R160M TPW60R160M Package TO-220F TO-220 TO-3PN TO-247 Marking 60R160M 60R160M 60R160M 60R160M Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value TO-220 TO-3PN TO-247 TO-220F Unit Drain-Source Voltage (V GS = 0V) V DSS 600 V Continuous Drain Current T C = 25ºC T C = 100ºC I D A Pulsed Drain Current (note1) I DM 60 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 418 mj Avalanche Current (note1) I AR 3.4 A Repetitive Avalanche Energy (note1) E AR 0.63 mj MOSFET dv/dt ruggedness, V DS = V dv/dt 50 Reverse diode dv/dt, V DS = 0 480V, I SD I D dv/dt 15 Power Dissipation (T C = 25ºC) P D W Operating Junction and Storage Temperature Range T J, T stg -55~+150 ºC Thermal Resistance Parameter Symbol Value TO-220 TO-3PN TO-247 TO-220F Unit Thermal Resistance, Junction-to-Case R thjc Thermal Resistance, Junction-to-Ambient R thja ºC/W V2.0 1

2 Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA V Zero Gate Voltage Drain Current I DSS V DS = 600V, V GS = 0V, T J = 25ºC V DS = 600V, V GS = 0V, T J = 150ºC μa Gate-Source Leakage I GSS V GS = ±30V ±100 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250µA V Drain-Source On-Resistance (Note3) R DS(on) V GS = 10V, I D = 10A Ω Gate resistance R G f = 1.0MHz open drain Ω Dynamic Input Capacitance C iss V GS = 0V, Output Capacitance C oss V DS = 100V, f = 1.0MHz Reverse Transfer Capacitance C rss pf Total Gate Charge Q g V DD = 480V, I D = 20A, Gate-Source Charge Q gs V GS = 10V Gate-Drain Charge Q gd nc Turn-on Delay Time t d(on) Turn-on Rise Time t r V DD = 400V, I D = 20A, Turn-off Delay Time t d(off) R G = 25Ω ns Turn-off Fall Time t f Drain-Source Body Diode Characteristics Continuous Body Diode Current I S T C = 25ºC Pulsed Diode Forward Current I SM A Body Diode Voltage V SD T J = 25ºC, I SD = 20A, V GS = 0V V Reverse Recovery Time t rr V R = 400V, I F = I S, ns Reverse Recovery Charge Q rr μc di F /dt = 100A/μs Peak Reverse Recovery Current I rrm A Notes 1. Repetitive Rating: Pulse Width limited by maximum junction temperature 2. I AS = 3.4A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. Pulse Test: Pulse Width 300μs, Duty Cycle 1% V2.0 2

3 Typical Characteristics T J = 25ºC, unless otherwise noted Figure 1. Output Characteristics Figure 2. Transfer Characteristics V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (Ω) I D, Drain Current (A) 20V 10V 7V 6V 5.5V 5v V DS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current V GS = 10V T J = 25ºC I D, Drain Current (A) Figure 5. Gate Charge V DD = 120V V DD = 520V I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) V DS = 10V V GS, Gate-to-Source Voltage (V) V GS = 0 f = 1MHz Figure 4. Capacitance C iss C oss C rss V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage T J = 150ºC T J = 25ºC T J = 25ºC T J = 150ºC Q g, Total Gate Charge (nc) V SD, Source-to-Drain Voltage (V) V2.0 3

4 Typical Characteristics T J = 25ºC, unless otherwise noted Figure 7. On-Resistance vs. Junction Temperature Figure 8. Threshold Voltage vs. Junction Temperature Z thjc, Thermal Impedance (K/W) R DS(on), (Normalized) 10-2 V GS = 10V I D = 10A T J, Junction Temperature (ºC) Figure 9. Transient Thermal Impedance TO-220/TO-3PN/TO-247 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse Z thjc, Thermal Impedance (K/W) V GS(th), (Variance) I D = 250µA T J, Junction Temperature (ºC) Figure 10. Transient Thermal Impedance TO-220F D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse T p, Pulse Width (s) T p, Pulse Width (s) 10 2 Figure 12. Safe operation area for TO-220/TO-3PN/TO Figure 13. Safe operation area for TO-220F I D, Drain Current(A) t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC I D, Drain Current(A) t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC V DS, Drain-Source Voltage(V) V DS, Drain-Source Voltage(V) V2.0 4

5 Figure A:Gate Charge Test Circuit and Waveform Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V2.0 5

6 TO-220F V2.0 6

7 TO-220 V2.0 7

8 TO-3PN V2.0 8

9 TO-247 V2.0 9

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