MMIS70H900Q 700V 1.4Ω N-channel MOSFET

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1 MMIS70H900Q 700V 1.4Ω N-channel MOSFET Description MMIS70H900Q is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit Parameter Value Unit D V T j,max 750 V R DS(on),max 1.4 Ω V TH,typ 3 V I D 3.2 A Q g,typ 8 nc G D S G S Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMIS70H900QTH 70H900Q -55 ~ 150 TO-251-VS Tube Halogen Free 1

2 Absolute Maximum Rating (T c =25 unless otherwise specified) Parameter Symbol Rating Unit Note Drain Source voltage V DSS 700 V Gate Source voltage V GSS ±30 V Continuous drain current I D 3.2 A T C = A T C =100 Pulsed drain current (1) I DM 9.6 A Power dissipation P D 28 W Single - pulse avalanche energy E AS 40 mj MOSFET dv/dt ruggedness dv/dt 50 V/ns V DD =50V, L=79.9mH Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T stg -55 ~150 Maximum operating junction temperature 1) Pulse width t P limited by T j,max 2) I SD I D, V DS peak V (BR)DSS T j 150 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case max R thjc 4.4 /W Thermal resistance, junction-ambient max R thja 62.5 /W 2

3 Static Characteristics (T c =25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain Source Breakdown voltage V (BR)DSS V V GS = 0V, I D =0.25mA Gate Threshold Voltage V GS(th) V V DS = V GS, I D =0.25mA Zero Gate Voltage Drain Current I DSS μa V DS = 700V, V GS = 0V Gate Leakage Current I GSS na V GS = ±30V, V DS =0V Drain-Source On State Resistance R DS(ON) Ω V GS = 10V, I D = 1.0A Dynamic Characteristics (T c =25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss Effective Output Capacitance Energy Related (3) C o(er) Turn On Delay Time t d(on) Rise Time t r Turn Off Delay Time t d(off) Fall Time t f Total Gate Charge Q g Gate Source Charge Q gs Gate Drain Charge Q gd pf ns nc Coss (V DS = 100V) Ciss, Crss (V DS = 25V) V GS = 0V, f = 1.0MHz V DS = 0V to 560V, V GS = 0V,f = 1.0MHz V GS = 10V, R G = 25Ω, V DS = 350V, I D = 3.2A V GS = 10V, V DS =560V, I D = 3.2A Gate Resistance R G Ω V GS = 0V, f = 1.0MHz 3) C o(er) is a capacitance that gives the same stored energy as C OSS while V DS is rising from 0V to 80% V (BR)DSS 3

4 Reverse Diode Characteristics (T c =25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current I SD A Diode Forward Voltage V SD V I SD = 3.2 A, VGS = 0 V Reverse Recovery Time t rr ns Reverse Recovery Charge Q rr μc Reverse Recovery Current I rrm A I SD = 3.2 A di/dt = 100 A/μs V DD = 100 V 4

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8 Physical Dimension TO-251-VS, 3L (IPAK-VS) Dimensions are in millimeters, unless otherwise specified 8

9 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 9