MMD50R380P 500V 0.38Ω N-channel MOSFET
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- Erika Potter
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1 MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss. Key Parameters Package & Internal Circuit Parameter Value Unit D V T j,max 550 V R DS(on),max 0.38 Ω V TH,typ 3 V G I D 11 A Q g,typ 21.8 nc G D S TO-252 (DPAK) S Features Low Power Loss by High Speed Switching and Low On-Resistance 100% Avalanche Tested Green Package Pb Free Plating, Halogen Free Applications PFC Power Supply Stages Switching Applications Adapter Motor Control DC DC Converters Ordering Information Order Code Marking Temp. Range Package Packing RoHS Status MMD50R380PRH 50R ~ 150 TO-252 (DPAK) Reel Halogen Free 1
2 Absolute Maximum Rating (T c =25 unless otherwise specified) Parameter Symbol Rating Unit Note Drain Source voltage V DSS 500 V Gate Source voltage V GSS ±30 V Continuous drain current I D 11 A T C = A T C =100 Pulsed drain current (1) I DM 33 A Power dissipation P D 83 W Single - pulse avalanche energy E AS 220 mj MOSFET dv/dt ruggedness dv/dt 50 V/ns Diode dv/dt ruggedness dv/dt 15 V/ns Storage temperature T stg -55 ~150 Maximum operating junction temperature 1) Pulse width t P limited by T j,max 2) I SD I D, V DS peak V (BR)DSS T j 150 Thermal Characteristics Parameter Symbol Value Unit Thermal resistance, junction-case max R thjc 1.5 /W Thermal resistance, junction-ambient max R thja 62.5 /W 2
3 Static Characteristics (T c =25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Drain Source Breakdown voltage V (BR)DSS V V GS = 0V, I D =0.25mA Gate Threshold Voltage V GS(th) V V DS = V GS, I D =0.25mA Zero Gate Voltage Drain Current I DSS μa V DS = 500V, V GS = 0V Gate Leakage Current I GSS na V GS = ±30V, V DS =0V Drain-Source On State Resistance R DS(ON) Ω V GS = 10V, I D = 3.8A Dynamic Characteristics (T c =25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Input Capacitance C iss Output Capacitance C oss Reverse Transfer Capacitance C rss Effective Output Capacitance Energy Related (3) C o(er) Turn On Delay Time t d(on) Rise Time t r Turn Off Delay Time t d(off) Fall Time t f Total Gate Charge Q g Gate Source Charge Q gs Gate Drain Charge Q gd pf ns nc V DS = 25V, V GS = 0V, f = 1.0MHz V DS = 0V to 400V, V GS = 0V,f = 1.0MHz V GS = 10V, R G = 25Ω, V DS = 250V, I D = 11A V GS = 10V, V DS = 400V, I D = 11A Gate Resistance R G Ω V GS = 0V, f = 1.0MHz 3) C o(er) is a capacitance that gives the same stored energy as C OSS while V DS is rising from 0V to 80% V (BR)DSS 3
4 Reverse Diode Characteristics (T c =25 unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Condition Continuous Diode Forward Current I SD A Diode Forward Voltage V SD V I SD = 11 A, VGS = 0 V Reverse Recovery Time t rr ns Reverse Recovery Charge Q rr μc Reverse Recovery Current I rrm A I SD = 11 A di/dt = 100 A/μs V DD = 100 V 4
5 Characteristic Graph 5
6 6
7 7
8 Test Circuit Same type as DUT 10V 100KΩ V GS 10V Q g + - V DS Q gs Q gd 1mA DUT 10V Charge Fig15-1. Gate charge measurement circuit Fig15-2. Gate charge waveform DUT I F I FM 0.5 I RM t a t rr t b I S + V - DS L d i/d t 0.75 I RM I RM 0.25 I RM R g 10KΩ Same type as DUT + - V DD V R V gs ± 15V V RM(REC) Fig16-1. Diode reverse recovery test circuit Fig16-1. Diode reverse recovery test waveform I D R g 25Ω DUT R L V DS V DS 90% V gs t p + 10% - V DD V GS T d(on) t r t on T d(off) t f t off Fig17-1. Switching time test circuit for resistive load Fig17-2. Switching time waveform I AS DUT V DS BV DSS R g t p t AV L I AS V gs t p + V DD V DS(t) - V DD Rds(on) * I AS Fig18-1. Unclamped inductive load test circuit Fig18-2. Unclamped inductive waveform 8
9 Physical Dimension TO-252 (D-PAK), 3L Dimensions are in millimeters, unless otherwise specified Worldwide Sales Support Locations 9
10 DISCLAIMER: The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be expected to result in a personal injury. Seller s customers using or selling Seller s products for use in such applications do so at their own risk and agree to fully defend and indemnify Seller. MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. 10
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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UNISONIC TECHNOLOGIES CO., LTD 13A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 13N50 is an N-Channel enhancement mode power MOSFET. The device adopts planar stripe and uses DMOS technology to minimize
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UNISONIC TECHNOLOGIES CO., LTD 0.5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge,
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UNISONIC TECHNOLOGIES CO., LTD 02NM60 Preliminary Power MOSFET 0.2A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 02NM60 is an Super Junction MOSFET Structure and is designed to have better
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UNISONIC TECHNOLOGIES CO., LTD 8A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N50 is a N-channel enhancement mode power MOSFET using UTC s advanced planar stripe and DMOS technology to provide perfect
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UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide
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MOSFET N 6V 7.5A,2 OHM 8N6 7.5 Amps,6/65 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N6 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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UNISONIC TECHNOLOGIES CO., LTD 3N8 3. Amps, 8Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 3N8 provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
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HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
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General Description The MDF9N5 uses advanced MagnaChip s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N5 is suitable device for SMPS,
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UNISONIC TECHNOLOGIES CO., LTD 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 8N80 is a N-channel mode power MOSFET, it uses UTC s advanced technology to provide costumers planar stripe and DMOS technology.
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UNISONIC TECHNOLOGIES CO., LTD 1.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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General Description These N-channel MOSFET are produced using advanced MagnaChip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices
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General Description The MDP13N5 uses advanced Magnachip s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. MDP13N5 is suitable device for SMPS,
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UNISONIC TECHNOLOGIES CO., LTD 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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