700V Super-Junction Power MOSFET

Transcription

1 700V Super-Junction Power MOSFET DESCRIPTION 700V super-junction Power MOSFET Super-junction power MOSFET is a revolutionary technology for high voltage power MOSFETs, designed according to the SJ principle. The SJ MOSFET is a price-performance optimized product enabling to target cost sensitive applications in Consumer and Lighting markets, designed by Wuxi Unigroup Microelectronics Company. FEATURES Very low FOM R DS(on) Q g 100% avalanche tested RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking TPA70R260M TO-220F 70R260M Key Performance Parameters Parameter Value Unit V T j,max 700 V R DS(on),max 0.26 Ω I D 15 A Q g,typ 27 nc I DM 45 A V4.0 1

2 Absolute Maximum Ratings T C = 25ºC, unless otherwise noted Parameter Symbol Value TO-220F Unit Drain-Source Voltage (V GS = 0V) V DSS 700 V Continuous Drain Current T C = 25ºC I D TC = 100ºC 9 15 A Pulsed Drain Current (note1) I DM 45 A Gate-Source Voltage V GSS ±30 V Single Pulse Avalanche Energy (note2) E AS 290 mj Repetitive Avalanche Energy (note2) E AR 0.44 mj Avalanche Current I AR 2.4 A MOSFET dv/dt ruggedness, V DS = V dv/dt 50 V/ns Power Dissipation P D 32 W Continuous Body Diode Current I S 12.8 Pulsed Diode Forward Current (note1) I SM 45 A Reverse diode dv/dt (note3) dv/dt 15 V/ns Maximum diode commutation speed (note3) di f /dt 500 A/us Operating Junction and Storage Temperature Range T J, T stg -55~+150 ºC Thermal Resistance Parameter Symbol Value TO-220F Unit Thermal Resistance, Junction-to-Case R thjc 3.9 Thermal Resistance, Junction-to-Ambient R thja 80 ºC/W V4.0 2

3 Specifications T J = 25ºC, unless otherwise noted Parameter Symbol Test Conditions Static Value Min. Typ. Max. Unit Drain-Source Breakdown Voltage V (BR)DSS V GS = 0V, I D = 250µA V Zero Gate Voltage Drain Current I DSS V DS = 700V, V GS = 0V, T J = 25ºC V DS = 700V, V GS = 0V, T J = 150ºC μa Gate-Source Leakage I GSS V GS = ±30V ±100 na Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250µA V Drain-Source On-Resistance R DS(on) V GS = 10V, I D = 7.5A Ω Gate resistance R G f = 1.0MHz open drain Ω Dynamic Input Capacitance C iss V GS = 0V, Output Capacitance C oss V DS = 100V, f = 1.0MHz Reverse Transfer Capacitance C rss Total Gate Charge Q g Gate-Source Charge Q gs V DD = 520V, I D = 15A, V GS = 10V Gate-Drain Charge Q gd pf nc Turn-on Delay Time t d(on) Turn-on Rise Time t r V DD = 400V, I D = 15A, Turn-off Delay Time t d(off) R G = 25Ω ns Turn-off Fall Time t f Drain-Source Body Diode Characteristics Body Diode Voltage V SD T J = 25ºC, I SD = 15A, V GS = 0V V Reverse Recovery Time t rr ns Reverse Recovery Charge Q rr V R = 400V, I F = I S, di F /dt = 100A/μs μc Peak Reverse Recovery Current I rrm A Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. I AS = 2.4A, V DD = 50V, R G = 25Ω, Starting T J = 25 C 3. Identical low side and high side switch with identical R G V4.0 3

4 Typical Characteristics T J = 25ºC, unless otherwise noted V GS, Gate-to-Source Voltage (V) R DS(on), On-Resistance (Ω) I D, Drain Current (A) Figure 1. Output Characteristics V DS, Drain-to-Source Voltage (V) Figure 3. On-Resistance vs. Drain Current I D, Drain Current (A) V 10V 8V 7V 6V 5V 4.5V V GS = 10V T J = 25ºC Figure 5. Gate Charge V DD = 120V Q g, Total Gate Charge (nc) I s, Source Current (A) Capacitance (pf) I D, Drain Current (A) V GS, Gate-to-Source Voltage (V) V DD = 520V T J = 25ºC Figure 2. Transfer Characteristics V DS = 20V V GS = 0 f = 1MHz Figure 4. Capacitance V DS, Drain-to-Source Voltage (V) Figure 6. Body Diode Forward Voltage T J = 125ºC T J = 25ºC T J = 150ºC C iss C oss C rss V SD, Source-to-Drain Voltage (V) V4.0 4

5 Typical Characteristics T J = 25ºC, unless otherwise noted R DS(on), (Normalized) Figure 7. On-Resistance vs. Junction Temperature V GS = 10V I D = 7.5A V GS(th), (Variance) Figure 8. Breakdown voltage vs. Junction Temperature I D = 250µA T J, Junction Temperature (ºC) T J, Junction Temperature (ºC) 10 1 Figure 9. Transient Thermal Impedance TO-220F 10 2 Figure 10. Safe operation area for TO-220F Z thjc, Thermal Impedance (ºC/W) D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse I D, Drain Current(A) t p = 1us t p = 10us t p = 100us t p = 1ms t p = 10ms DC T p, Pulse Width (s) V DS, Drain-Source Voltage(V) V4.0 5

6 Figure A:Gate Charge Test Circuit and Waveform TPA70R260M Figure B:Resistive Switching Test Circuit and Waveform Figure C:Unclamped Inductive Switching Test Circuit and Waveform V4.0 6

7 TO-220F TPA70R260M Unit:mm Symbol Min. Nom Max. Unit:mm Symbol Min. Nom Max. E e 2.54BSC A A A A c c D L L ΦP ΦP F G b H1 6.70REF b V4.0 7

8 Disclaimer All product specifications and data are subject to change without notice. TPA70R260M For documents and material available from this datasheet, Wuxi Unigroup does not warrant or assume any legal liability or responsibility for the accuracy, completeness of any product or technology disclosed hereunder. No license, express or implied, by estoppels or otherwise, to any intellectual property rights is granted by this document or by any conduct of Wuxi Unigroup. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling Wuxi Unigroup products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Wuxi Unigroup for any damages arising or resulting from such use or sale. Wuxi Unigroup disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Wuxi Unigroup s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. Wuxi Unigroup Microelectronics CO., LTD. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all Wuxi Unigroup products (including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. Information (including circuit diagrams and circuit parameters) herein is for example only. It is not guaranteed for volume production. Wuxi Unigroup believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. V4.0 8