APM4953. Features. Pin Description. Applications. Ordering and Marking Information. Absolute Maximum Ratings (T A

Transcription

1 Dual P-Channel Enhancement Mode MOSFET Features Pin Description -3V/-4.9A, R DS(ON) = V GS = -V R DS(ON) = V GS = -4.5V S 8 Super High Density Cell Design G 7 Reliable and Rugged S 3 6 D SO-8 Package G 4 5 D Applications S SO 8 S Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems G G D D Ordering and Marking Information P-Channel MOSFET APM4953 Handling Code Temp. Range Package Code Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 5 C Handling Code TU : Tube TR : Tape & Reel APM4953 K : APM4953 XXXXX XXXXX - Date Code Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter Rating Unit V DSS Drain-Source Voltage -3 V GSS Gate-Source Voltage ±5 I D * Maximum Drain Current Continuous T A = 5 C -4.9 I DM Maximum Drain Current Pulsed -3 * Surface Mounted on FR4 Board, t sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. V A

2 Absolute Maximum Ratings (Cont.) (T A = 5 C unless otherwise noted) Symbol Parameter Rating Unit P D Maximum Power Dissipation T A = 5 C.5 W T A = C. T J Maximum Junction Temperature 5 C T STG Storage Temperature Range -55 to 5 R θja * Thermal Resistance - Junction to Ambient 5 C/W Electrical Characteristics (TA=5 C unless otherwise noted) Symbol Parameter Test Condition Static APM4953 Min. Typ a. Max. BV DSS Drain-Source Breakdown Voltage V GS =V, I DS =-5µA -3 V I DSS Zero Gate Voltage Drain Current V DS =-4V, V GS =V - µa V GS(th) Gate Threshold Voltage V DS =V GS, I DS =-5µA V I GSS Gate Leakage Current V GS =±5V, V DS =V ± na R DS(ON) Drain-Source On-state V GS =-V, I DS =-4.9A 53 6 Resistance b V GS =-4.5V, I DS =-3.6A 8 95 V SD Diode Forward Voltage b I SD =-.7A, V GS =V V Dynamic a Q g Total Gate Charge V DS =-5V, I GS =-V.3 9 Q gs Gate-Source Charge l D =-4.6A 4.65 Q gd Gate-Drain Charge t d(on) Turn-on Delay Time V DD =-5V, I D =-A, 8 T r Turn-on Rise Time V 5 GEN =-V, R G =6Ω t d(off) Turn-off Delay Time 38 R L =7.5Ω T f Turn-off Fall Time 5 5 C iss Input Capacitance V GS =V 6 C oss Output Capacitance V DS =-5V 34 C rss Reverse Transfer Capacitance Frequency=.MHz Notes a : Pulse test ; pulse width 3µs, duty cycle % b : Guaranteed by design, not subject to production testing Unit mω nc ns pf Copyright ANPEC Electronics Corp. Rev. A. - Feb., 3

3 Typical Characteristics Output Characteristics Transfer Characteristics V GS = 5,6,7,8,9,V 5 -ID-Drain Current (A) 5 5 -V GS =4V -V GS =3V -V GS =V -ID-Drain Current (A) 5 5 TJ=5 C TJ=5 C TJ=-55 C VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) -VGS(th)-Threshold Voltage (V) (Normalized) Threshold Voltage vs. Junction Temperature IDS=5µA RDS(on)-On-Resistance (Ω) On-Resistance vs. Drain Current V GS =-4.5V V GS =-V Tj - Junction Temperature ( C) ID - Drain Current (A) 3

4 Typical Characteristics (Cont.) RDS(on)-On-Resistance (Ω) On-Resistance vs. Gate-to-Source Voltage I D = 4.9A VGS - Gate-to-Source Voltage (V) RDS(on)-On-Resistance (Ω) (Normalized) On-Resistance vs. Junction Temperature VGS=V -ID=4.9A TJ - Junction Temperature ( C) Gate Charge Capacitance -VGS-Gate-Source Voltage (V) VD=V -ID=4.9A Capacitance (pf) Frequency=MHz Ciss Coss Crss QG - Gate Charge (nc) VDS - Drain-to-Source Voltage (V) 4

5 Typical Characteristics (Cont.) 3 Source-Drain Diode Forward Voltage 5 Single Pulse Power -I S -Source Current (Α) T J =5 C T J =5 C Power (W) V SD -Source-to-Drain Voltage (V ).. Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle =.5 D=. D=. D=.5 D=. SINGLE PULSE.Duty Cycle, D=t/t.Per Unit Base=RthJA=5 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted. E-4 E-3.. Square Wave Pulse Duration (sec) 5

6 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-) E H.5X45 e e D A A.4max. L Dim Millimeters Inches Min. Max. Min. Max. A A D E H L e e.7bsc.5bsc φ 8 8 6

7 Physical Specifications Terminal Material Solder-Plated Copper (Solder Material : 9/ or 63/37 SnPb) Lead Solderability Meets EIA Specification RSI86-9, ANSI/J-STD- Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Pre-heat temperature 83 C Peak temperature Time Classification Reflow Profiles Convection or IR/ VPR Convection Average ramp-up rate(83 C to Peak) 3 C/second max. C /second max. Preheat temperature 5 ± 5 C) seconds max Temperature maintained above 83 C 6 5 seconds Time within 5 C of actual peak temperature seconds 6 seconds Peak temperature range +5/- C or 35 +5/- C 5-9 C or 35 +5/- C Ramp-down rate 6 C /second max. C /second max. Time 5 C to peak temperature 6 minutes max. Package Reflow Conditions pkg. thickness.5mm and all bgas pkg. thickness <.5mm and pkg. volume 35 mm³ pkg. thickness <.5mm and pkg. volume < 35mm³ Convection +5/- C Convection 35 +5/- C VPR 5-9 C VPR 35 +5/- C IR/Convection +5/- C IR/Convection 35 +5/- C 7

8 Reliability test program Test item Method Description SOLDERABILITY MIL-STD-883D-3 45 C,5 SEC HOLT MIL-STD 883D-5.7 Hrs 5 C PCT JESD--B, A 68 Hrs, % RH, C TST MIL-STD 883D C ~ 5 C, Cycles Carrier Tape & Reel Dimensions t E Po P P D W F Bo Ao Ko T J A C B T Application A B C J T T W P E 33 ± ±.5.4 ±. ±. ±. 3 8±..75±. SOP- 8 F D Po P Ao Bo Ko t 5.5± ±.. ±. 6.4 ±. 5.±..±..3±.3 8

9 Cover Tape Dimensions Application Carrier Width Cover Tape Width Devices Per Reel SOP Customer Service Anpec Electronics Corp. Head Office : 5F, No. Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : 7F, No. 37, Lane 35, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : Fax :