AO6801 Dual P-Channel Enhancement Mode Field Effect Transistor
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1 May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features V DS (V) = -3V I D = -2.3 A R DS(ON) < 3mΩ (V GS = -V) R DS(ON) < 8mΩ (V GS = -4.V) R DS(ON) < 26mΩ (V GS = -2.V) D D2 TSOP6 Top View G S2 G D S D2 G S G2 S2 Absolute Maximum Ratings T A =2 C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Symbol V DS V GS Maximum -3 ±2 Continuous Drain T A =2 C -2.3 Current A T A =7 C I D -.8 Pulsed Drain Current B I DM -2 T A =2 C. P D Power Dissipation A T A =7 C.73 Junction and Storage Temperature Range T J, T STG - to Units V V A W C Thermal Characteristics Parameter Symbol Typ Max Units Maximum Junction-to-Ambient A t s 78 C/W R Maximum Junction-to-Ambient A θja Steady-State 6 C/W Maximum Junction-to-Lead C Steady-State R θjl 64 8 C/W Alpha & Omega Semiconductor, Ltd.
2 AO68 Electrical Characteristics (T J =2 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV DSS Drain-Source Breakdown Voltage I D =-2µA, V GS =V -3 V I DSS Zero Gate Voltage Drain Current V DS =-24V, V GS =V - T J = C - µa I GSS Gate-Body leakage current V DS =V, V GS =±2V ± na V GS(th) Gate Threshold Voltage V DS =V GS I D =-2µA V I D(ON) On state drain current V GS =-4.V, V DS =-V -2 A R DS(ON) V GS =-V, I D =-2.3A 7 3 mω T J =2 C Static Drain-Source On-Resistance V GS =-4.V, I D =-2A 3 8 mω V GS =-2.V, I D =-A 9 26 mω g FS Forward Transconductance V DS =-V, I D =-2.3A 8 S V SD Diode Forward Voltage I S =-A,V GS =V V I S Maximum Body-Diode Continuous Current -.3 A DYNAMIC PARAMETERS C iss Input Capacitance 49 pf C oss Output Capacitance V GS =V, V DS =-V, f=mhz pf C rss Reverse Transfer Capacitance 42 pf R g Gate resistance V GS =V, V DS =V, f=mhz 2 Ω SWITCHING PARAMETERS Q g Total Gate Charge 4.9 nc Q gs Gate Source Charge V GS =-4.V, V DS =-V, I D =-2.A.6 nc Q gd Gate Drain Charge.6 nc t D(on) Turn-On DelayTime 6.9 ns t r Turn-On Rise Time V GS =-V, V DS =-V, R L =7.Ω, 3.3 ns t D(off) Turn-Off DelayTime R GEN =3Ω 38. ns t f Turn-Off Fall Time 3.2 ns t rr Body Diode Reverse Recovery Time I F =-2.A, di/dt=a/µs ns Q rr Body Diode Reverse Recovery Charge I F =-2.A, di/dt=a/µs 8 nc A: The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The value in any a given application depends on the user's specific board design. The current rating is based on the t s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θja is the sum of the thermal impedence from junction to lead R θjl and lead to ambient. D. The static characteristics in Figures to 6,2,4 are obtained using 8 µs pulses, duty cycle.% max. E. These tests are performed with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =2 C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd.
3 AO68 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 -V -V -4V -4.V 8 V DS =-V 2 C -I D (A) V GS =-3.V -3V -I D (A) C -2.V -2V V DS (Volts) Fig : On-Region Characteristics V GS (Volts) Figure 2: Transfer Characteristics 2.6 R DS(ON) (mω) V GS =-2.V V GS =-4.V V GS =-V Normalized On-Resistance.4.2 V GS =-4.V, V GS =-V V GS =-2.V I D =-2A I D (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage Temperature ( C) Figure 4: On-Resistance vs. Junction Temperature 3 3.E+.E+ R DS(ON) (mω) 2 2 I D =-2A 2 C 2 C -I S (A).E-.E-2.E-3.E-4 2 C 2 C.E V GS (Volts) Figure : On-Resistance vs. Gate-Source Voltage.E V SD (Volts) Figure 6: Body-Diode Characteristics Alpha and Omega Semiconductor, Ltd.
4 AO68 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 V DS =-V I D =-2.A 6 -V GS (Volts) 3 2 Capacitance (pf) C iss C oss C rss Q g (nc) Figure 7: Gate-Charge Characteristics V DS (Volts) Figure 8: Capacitance Characteristics -I D (Amps).... T J(Max) = C T A =2 C R DS(ON) limited s s.s DC µs ms ms µs. -V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Power (W) 2 T J(Max) = C T A =2 C... Pulse Width (s) Figure : Single Pulse Power Rating Junction-to- Ambient (Note E) Z θja Normalized Transient Thermal Resistance. D=T on /(T on +T off ) T J,PK =T A +P DM.Z θja.r θja R θja = C/W In descending order D=.,.3,.,.,.2,., single pulse Single Pulse Pulse Width (s) Figure : Normalized Maximum Transient Thermal Impedance P D T on T off Alpha & Omega Semiconductor, Ltd.
5 ALPHA & OMEGA SEMICONDUCTOR, INC. TSOP-6 Package Data θ SYMBOLS A. A. A2. b.3 c. D 2.7 E 2.6 E.6 e e L.37 θ DIMENSIONS IN MILLIMETERS MIN NOM MAX BSC.9 BSC 8 GAUGE PLANE SEATING PLANE NOTE:. LEAD FINISH: MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±. mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY :. mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION RECOMMENDED LAND PATTERN TSOP-6 PART NO. CODE PART NO. AO68 CODE H NOTE: P N - PART NUMBER CODE. D - YAER AND WEEK CODE. L N - ASSEMBLY LOT CODE, FAB AND ASSEMBLY LOCATION CODE.
6 ALPHA & OMEGA SEMICONDUCTOR, INC. TSOP-6 Tape and Reel Data TSOP-6 Carrier Tape TSOP-6 Reel TSOP-6 Tape Leader / Trailer & Orientation
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UNISONIC TECHNOLOGIES CO., LTD DUAL ENHANCEMENT MODE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC UD466 provides excellent R DS(ON) and low gate charge by using advanced trench technology MOSFETs. The complementary
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WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
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LEHAN RAIO COMPANY, LT. LO4459PT1G P-Channel Enhancement Mode Field Effect Transistor General escription The LO4459PT1G uses advanced trench technology to provide excellent R (ON) with low gate charge.
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UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
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Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
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TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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2V PChannel MOSFET General escription The AON447 uses advanced trench technology to provide excellent R S(ON), low gate charge and operation with gate voltages as low as.8v. This device is suitable for
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MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
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6V, A NChannel MOSFET General Description The have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC DC applications.
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AOT2N65/AOTF2N65/AOB2N65 65V, 2A NChannel MOSFET General Description The AOT2N65 & AOTF2N65 & AOB2N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high
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AOWN65/AOWFN65 65V,A NChannel MOSFET General Description The AOWN65/AOWFN65 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness
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AOWT6P/AOWFT6P 6V,A NChannel MOSFET General Description Trench Power AlphaMOSII technology Low R DS(ON) Low Ciss and Crss High Current Capability RoHS and Halogen Free Compliant Product Summary V DS @
More informationUNISONIC TECHNOLOGIES CO., LTD UT6401
UNISONIC TECHNOLOGIES CO., LTD UT64 5A, 3V P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT64 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed,
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
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General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
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AO47 PChannel Enhancement Mode Field Effect Transistor General escription The AO47 uses advanced trench technology to provide excellent R S(ON), low gate charge and low gate resistance. With the excellent
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RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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