WPM3407 WPM3407. Description. Features. Application. Order information V (BR)DSS. R DS(on) Typ V V 30 V

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1 WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion applications. Standard Product WPM347 is Pb-free. Features V (BR)DSS 3 V Application R DS(on) Typ 36 V V SOT 23-3 pin connections : P Channel Power Management in Note book Portable Equipment Battery Powered System DC/DC Converter Load Switch G S 2 3 D Top View ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol S Steady State Unit Drain-Source Voltage V DS -3 V Gate-Source Voltage ±2 Continuous Drain Current T A =25 C (T J =5 C) a I D T A =7 C A Pulsed Drain Current I DM -2 Maximum Power T A =25 C.4. Dissipation a P D W T A =7 C.9.6 Operating Junction and Storage T Temperature Range J,T stg -55to5 C Drain 3 WP7 2 Gate Source W = Willsemi P7 = Device Code * * = Year&Month Order information Part Number Package Shipping WPM347-3/TR SOT23-3 3Tape&Reel Will Semiconductor Ltd. Aug,28- Rev..4

2 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient Thermal Resistance a t s 7 9 R θja Steady State 9 25 C/W Junction-to-Case Thermal Resistance Steady State R θjc 5 8 a. Surface Mounted on FR4 Board using in sq pad size, oz Cu. Electrical Characteristics (T J =25 C unless otherwise noted) Static Parameters Parameter Symbol Test Condition Min Typ Max Unit Drain-Source Breakdown Voltage BV DSS =V,I D = -25 µa -3 V Zero Gate Voltage Drain Current I DSS V DS =24V, =V T J =25 C - T J =85 C - µa Gate-Source Leakage Current I GSS V DS =V, =±2V ± na Gate Threshold Voltage (th) =V DS,I D = -25 µa V Drain-source On-Resistance R DS(on) = -V, I D =-4.4A =-4.5,I D =-3.A mω Forward Recovery Voltage V SD =V,I S =-.A V Forward Transconductance g FS V DS =-5.V,I D =-5A 5 8 S Dynamic Input Capacitance C iss Output Capacitance C oss VGS =V,f=.MHz,VDS =-5V pf Reverse Transfer Capacitance C rss Total Gate Charge Q g(tot) Threshold Gate Charge Q g(th) =-V,V DS =-5V,I D =5A - Gate- Source Charge Q gs nc Gate- Drain Charge Q gd Gate Resistance R g =V,V DS =V,f=.MHz 5 8 Ω Switching Parameters Turn-On Delay Time t d(on) 8 5 Rise Time t r =-V,V DS =-5V, Turn-Off Delay Time t d(off) I D =-4.3A, R G =6 Ω ns Fall Time t f Body Diode Reverse Recovery Time t rr I F =-5A, di/dt=a/µs 25 ns Body Diode Reverse Recovery Charge Q rr I F =-5A, di/dt=a/µs 4 nc Will Semiconductor Ltd. 2 Aug,28- Rev..4

3 Typical Performance Characteristis I D,Drain Current(A) =V =6V =4V =3V V DS,Drain-Source voltage(v) R DS(ON) ON Resistance(mOhm) =4.5V =6V 6 3 =V I D, Drain Current(A) Drain Current VS Drain-Source voltage Drain Current vs ON Resistance R DS(ON) ON Resistance(Ohm).2.6 I D =-3A ,Gate-Source Voltage(V) I D,Drain Current(A) V DS =-2V ,Gate-Source Voltage(V) Gate-Source Voltage vs ON Resistance Drain Current VS Gate-Source Voltage.6 Normalized On-Resistance.4.2 =-V =-4.5V I D =-3A Temperature ( C) On-Resistance vs. Junction Will Semiconductor Ltd. 3 Aug,28- Rev..4

4 - (Volts) V DS =-5V I D =-6A Q g (nc) Gate-Charge Characteristics Capacitance (pf) C iss C oss C rss V DS (Volts) Capacitance Characteristics -I D (Amps). T J(Max) =5 C T A =25 C R DS(ON) limited s s.s DC s ms ms s. -V DS (Volts) Maximum Forward Biased Safe Operating Area (Note E) Power (W) T J(Max) =5 C T A =25 C... Pulse Width (s) Single Pulse Power Rating Junction-to- Ambient (Note E) Z JA Normalized Transient Thermal Resistance.. D=T on /T T J,PK =T A +P DM.Z JA.R JA R JA =4 C/W Single Pulse In descending order D=.5,.3,.,.5,.2,., single pulse..... Pulse Width (s) Normalized Maximum Transient Thermal Impedance P D T on T Will Semiconductor Ltd. 4 Aug,28- Rev..4

5 Avalanche Energy (Single pulsed) Test Circuit & Waveforms E AS =/2 L*I AR 2 Will Semiconductor Ltd. 5 Aug,28- Rev..4

6 Power Dissipation Characteristics.ThepackageofWPM347isSOT23-3,surfacemountedonFR4Boardusinginsqpadsize, ozcu,r θja is 25 /W. 2. The power dissipation P D isbasedont J(MAX) =5 C, and the relation between T J and P D is T J =T a +R θja *P D,the maximum power dissipation is determined by R θja. 3. The R θja is the thermal impedance from junction to ambient, using larger PCB pad size can get smaller R θja and result in larger maximum power dissipation. 25 /W when mounted on ain 2 pad of oz copper. Will Semiconductor Ltd. 6 Aug,28- Rev..4

7 Package outline dimensions WPM347 SOT-23-3L D b E E e e c TOP VIEW SIDE VIEW A A SIDE VIEW Symbol Dimensions in Millimeters Min. Typ. Max. A A. -.5 b c. -.2 D E E e.95 BSC e Will Semiconductor Ltd. 7 Aug,28- Rev..4

8 TAPE AND REEL INFORMATION WPM347 Reel Dimensions RD P Tape Dimensions W Quadrant Assignments For PIN Orientation In Tape Q Q2 Q Q2 Q3 Q4 Q3 Q4 User Direction of Feed RD Reel Dimension W Overall width of the carrier tape 7inch 3inch 8mm 2mm 6mm P Pin Pitch between successive cavity centers Pin Quadrant 2mm 4mm 8mm Q Q2 Q3 Q4 Will Semiconductor Ltd. 8 Aug,28- Rev..4