Enhancement Mode N-Channel Power MOSFET
|
|
- Tabitha Cain
- 5 years ago
- Views:
Transcription
1 SFG180N10x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic power supply Motor control Synchronous-rectification Isolated DC/DC convertor Invertors
2 SFG180N10P SFG180N10K General Description SFG180N10x use advanced SFGMOS TM technology to provide low R DS(ON) low gate charge fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in motor control applications. V DS min I D pulse R DS(ON) VGS=10 V Q g 100 V 540 A 3 mω nc Schematic and Package Information SCHEMATIC DIAGRAM PIN ASSIGNMENT TOP VIEW TO220 SFG180N10P TO263 SFG180N10K Absolute Maximum Ratings at T j=25 unless otherwise noted Parameter Symbol Value Unit Drain source voltage V DS 100 V Gate source voltage V GS ±20 V Continuous drain current 1) I D 180 A Pulsed drain current 2) I D pulse 540 A Power dissipation 3) P D 350 W Single pulsed avalanche energy 5) E AS 1000 mj Operation and storage temperature T stgt j -55 to 150 Oriental Semiconductor Copyright reserved / 10
3 SFG180N10P SFG180N10K Thermal Characteristics Parameter Symbol Value Unit Thermal resistance junction-case R θjc 0.36 /W Thermal resistance junction-ambient 4) R θja 62.5 /W Electrical Characteristics at T j=25 unless otherwise specified Parameter Symbol Min. Typ. Max. Unit Test condition Drain-source breakdown voltage BV DSS 100 V V GS=0 V I D=250 μa Gate threshold voltage V GS(th) V V DS=V GS I D=250 μa Drain-source on-state resistance R DS(ON) mω V GS=10 V I D=20 A Gate-source leakage current I GSS 100 V GS=20 V na -100 V GS=-20 V Drain-source leakage current I DSS 1 μa V DS=100 V V GS=0 V Dynamic Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Input capacitance C iss pf Output capacitance C oss pf Reverse transfer capacitance C rss 33.3 pf Turn-on delay time t d(on) 40.7 ns Rise time t r 31.4 ns Turn-off delay time t d(off) 75.4 ns Fall time t f 16.2 ns V GS=0 V V DS=50 V ƒ=100 khz V GS=10 V V DS=50 V R G=2.2 Ω I D=25 A Oriental Semiconductor Copyright reserved / 10
4 SFG180N10P SFG180N10K Gate Charge Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Total gate charge Q g nc Gate-source charge Q gs 38.4 nc Gate-drain charge Q gd 41.6 nc Gate plateau voltage V plateau 4.6 V I D=25 A V DS=50 V V GS=10 V Body Diode Characteristics Parameter Symbol Min. Typ. Max. Unit Test condition Diode forward current I S 180 Pulsed source current I SP 540 A V GS<V th Diode forward voltage V SD 1.3 V I S=20 A V GS=0 V Reverse recovery time t rr 99.2 ns Reverse recovery charge Q rr nc Peak reverse recovery current I rrm 6.7 A I S=25 A di/dt=100 A/μs Note 1) Calculated continuous current based on maximum allowable junction temperature. 2) Repetitive rating; pulse width limited by max. junction temperature. 3) Pd is based on max. junction temperature using junction-case thermal resistance. 4) The value of R θja is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper in a still air environment with T a=25. 5) V DD=50 V R G=25 Ω L=0.3 mh starting T j=25. Oriental Semiconductor Copyright reserved / 10
5 SFG180N10P SFG180N10K Electrical Characteristics Diagrams V 100 V DS =10 V I D Drain current (A) V 4.5 V 4.2 V I D Drain current(a) V GS = 4 V V DS Drain-source voltage (V) V GS Gate-source voltage(v) Figure 1 Typ. output characteristics Figure 2 Typ. transfer characteristics C Capacitance(pF) C iss C oss R DS(on) On resistance (mω ) 4 3 C rss V DS Drain-source voltage (V) T j Juntion temperature ( ) Figure 3 Typ. capacitances Figure 4 Typ. gate charge BV Dss Drain-source voltage (V) T j Juntion temperature ( ) R DS(on) On resistance (mω ) T j Juntion temperature ( ) Figure 5 Drain-source breakdown voltage Figure 6 Drain-source on-state resistance Oriental Semiconductor Copyright reserved / 10
6 SFG180N10P SFG180N10K 1000 Is Source current(a) I D Drain current(a) R DS(ON) Limited 10us 100 s 1ms 10ms DC V SD Source-drain voltage(v) V DS Drain-source voltage(v) Figure 7 Forward characteristic of body diode Figure 8 Safe operation area T C=25 Oriental Semiconductor Copyright reserved / 10
7 SFG180N10P SFG180N10K Test circuits and waveforms Figure 1 Gate charge test circuit & waveform Figure 2 Switching time test circuit & waveforms Figure 3 Unclamped inductive switching (UIS) test circuit & waveforms Figure 4 Diode reverse recovery test circuit & waveforms Oriental Semiconductor Copyright reserved / 10
8 SFG180N10P SFG180N10K Package Information TO220 package outline dimension Symbol Min Nom Max A A A b b c D D D E E e e1 H BSC 5.08 BSC L L ΦP Q Oriental Semiconductor Copyright reserved / 10
9 SFG180N10P SFG180N10K Package Information TO263 package outline dimension Oriental Semiconductor Copyright reserved / 10
10 SFG180N10P SFG180N10K Ordering Information Package Units/Tube Tubes/Inner Box Units/Inner Box Inner Box/Carton Box Units/Carton Box TO TO Oriental Semiconductor Copyright reserved / 10
Enhancement Mode N-Channel Power MOSFET
SFG130N08xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationEnhancement Mode N-Channel Power MOSFET
SFG280N08xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG170N10xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG130NxF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFG10R20xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFS04R02xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
SFGRxF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low R DS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer electronic
More informationN-Channel Power MOSFET
OSG60R150xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationEnhancement Mode N-Channel Power MOSFET
OSG65R099xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Easy to drive
More informationN-Channel Power MOSFET
OSG65R200xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching PWM Server
More informationN-Channel Power MOSFET
OSG65R290xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG55R580xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65RK4xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationEnhancement Mode N-Channel Power MOSFET
OSG55R160xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Applications Lighting
More informationEnhancement Mode N-Channel Power MOSFET
OSG60R8xZF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Applications Lighting
More informationN-Channel Power MOSFET
OSG65R580xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG60R180x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG55R190xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R580x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationN-Channel Power MOSFET
OSG65R760x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationEnhancement Mode N-Channel Power MOSFET
OSG65R900xTF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Easy to drive Applications Lighting Hard switching
More informationEnhancement Mode N-Channel Power MOSFET
_Datasheet Enhancement Mode N-Channel Power MOSFET Features Ultra-fast and robust body diode Low RDS(on) & FOM Excellent low switching loss Excellent stability and uniformity Easy to drive Applications
More informationEnhancement Mode N-Channel Power MOSFET
OSG60RK2x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer
More informationEnhancement Mode N-Channel Power MOSFET
OSG65R580x_Datasheet Enhancement Mode N-Channel Power MOSFET Features Applications Low R DS(on) Low FOM Extremely low switching loss Good stability and uniformity Advanced GreenMOS TM technology Consumer
More informationSSF11NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche
More informationSSFT V N-Channel MOSFET
Main Product Characteristics SSFT3904 V DSS 30V R DS(on) 2.6mΩ (typ.) I D 110A Features and Benefits TO-220 Mark ing an d P i n Assignment Schematic Diagram Advanced MOSFET process technology Ideal for
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCD80R600R 800V N-Channel Super Junction MOSFET
HCD80R600R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationHCI70R500E 700V N-Channel Super Junction MOSFET
HCI70R500E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationHGI290N10SL. Value T C =25 31 Continuous Drain Current (Silicon Limited) I D T C = Drain to Source Voltage. Symbol V DS
, HGI29NSL P- Feature High Speed Power Switching, Logic Level Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness % UIS Tested, % Rg Tested Lead Free, Halogen Free V N-Ch Power MOSFET V
More informationSSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description
Main Product Characteristics V DSS -20V R DS(on) 37mΩ (typ.) I D -4A 1 SOT-23 Marking and Pin A s s i gnm e nt Schematic Diagram Features and Benefit Advanced MOSFET process technology Ideal for PWM, load
More informationHCA80R250T 800V N-Channel Super Junction MOSFET
HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCS80R1K4E 800V N-Channel Super Junction MOSFET
HCS80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationHCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET
HCA60R080FT (Fast Recovery Diode Type) 600V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested
More informationUNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT30P04 Preliminary Power MOSFET -21A, -40V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT30P04 is a P-channel power MOSFET providing customers with fast switching, ruggedized
More informationHCS80R380R 800V N-Channel Super Junction MOSFET
HCS8R38R 8V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity % Avalanche Tested Application Switch Mode Power Supply
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60
UNISONIC TECHNOLOGIES CO., LTD 5N60 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
More informationHCS90R1K5R 900V N-Channel Super Junction MOSFET
HCS90RK5R 900V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationMMQ60R190P 600V 0.19Ω N-channel MOSFET
MMQ60R190P 600V 0.19Ω N-channel MOSFET Description MMQ60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More informationHCS80R850R 800V N-Channel Super Junction MOSFET
HCS80R850R 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 00% Avalanche Tested Application Switch Mode Power
More informationUNISONIC TECHNOLOGIES CO., LTD 13NM50-U2
UNISONIC TECHNOLOGIES CO., LTD 13NM50-U2 13A, 500V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM50-U2 is a Super Junction MOSFET Structure and is designed to have better characteristics, such
More informationUNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UNA06R165M Advance POWER MOSFET 60A, 60V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UNA06R165M is an N-channel Power MOSFET, it uses UTC s advanced
More informationProduct Summery. Applications
General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationUNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT150N03 Preliminary Power MOSFET N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC UTT150N03 is a N-channel power MOSFET, using UTC s advanced trench technology
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 5A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N65 is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge,
More informationYJG85G06A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT N-Channel Enhancement Mode Field Effect Transistor Product Summary VDS ID ID (Package limited) RDS(ON)( at VGS=10V) RDS(ON)( at VGS=4.5V) 100% UIS Tested 100% VDS Tested 60V 130A 85A
More informationUNISONIC TECHNOLOGIES CO., LTD UTT52N15H
UNISONIC TECHNOLOGIES CO., LTD UTT52N15H POWER MOSFET 52A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET DESCRIPTION The UTC UTT52N15H is a N-channel, it uses UTC s advanced technology to provide
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationUNISONIC TECHNOLOGIES CO., LTD UFC8N80K
UNISONIC TECHNOLOGIES CO., LTD UFC8N80K 8A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFC8N80K provide excellent R DS(ON), low gate charge and operation with low gate voltages. This device is suitable
More informationHCS70R350E 700V N-Channel Super Junction MOSFET
HCS70R350E 700V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Higher dv/dt ruggedness Application
More informationUNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ
UNISONIC TECHNOLOGIES CO., LTD 6N65K-MTQ 6A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N65K-MTQ is a high voltage power MOSFET designed to have better characteristics, such as fast switching time,
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationHCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET
HCS65R110FE (Fast Recovery Diode Type) 650V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 12A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 12N80 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with planar
More informationUNISONIC TECHNOLOGIES CO., LTD UTT50P04
UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC s advanced technology. This technology allows a minimum on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 20A, 150V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 20N15V is a N-Channel POWER MOSFET, it uses UTC s advanced technology to provide customers with high switching speed
More informationUNISONIC TECHNOLOGIES CO., LTD 13NM60
UNISONIC TECHNOLOGIES CO., LTD 13NM60 13A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 13NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is an N-channel mode power MOSFET using UTC s advanced technology to provide customers with planar stripe and DMOS technology.
More informationTO-220 G. T C = 25 C unless otherwise noted. Drain-Source Voltage 80 V. Symbol Parameter MSP120N08G Units R θjc
MSP120N08G 80V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s advanced technology. which provides high performance in on-state resistance, fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 600V N-CHANNEL POWER MOSFET DESCRIPTION TO-220 TO-220F The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationUNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT80P06 Preliminary Power MOSFET -80A, -60V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT80P06 is a P-channel power MOSFET using UTC s advanced technology to provide the
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 10A, 800V N-CHANNEL POWER MOSFET DESCRIPTION The UTC uses UTC s advanced proprietary, planar stripe, DMOS technology to provide excellent R DS(ON), low gate charge and operation
More informationYJG80G06A. N-Channel Enhancement Mode Field Effect Transistor
RoHS COMPLIANT Top View N-Channel Enhancement Mode Field Effect Transistor PDFN 5X6 8L Bottom View Product Summary V DS I D (at V GS =10V) R DS(ON) ( at V GS =10V) R DS(ON) ( at V GS =4.5V) 100% UIS Tested
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.2A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N03
UNISONIC TECHNOLOGIES CO., LTD UT50N03 50A, 30V N-CHANNEL POWER MOSFET FEATURES * R DS(ON) < 14 mω @ V GS = 10 V, I D = 30 A * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 24A, 650V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 24NM65 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching
More informationUNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 6NM80 Preliminary Power MOSFET 6.0A, 800V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 6NM80 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More informationUNISONIC TECHNOLOGIES CO., LTD UT50N04
UNISONIC TECHNOLOGIES CO., LTD 50A, 40V N-CHANNEL POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement MOSFET using UTC s advanced technology to provide the customers with perfect R DS(ON) and high
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 4A, 6V N-CHANNEL POWER MOSFET DESCRIPTION TO-22F TO-22F The UTC 4N6-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching
More information30V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications 3V N-Channel Trench MOSFET TTG9N3AT APPLICATIONS Synchronous Rectification in DC/DC and AC/DC
More informationUNISONIC TECHNOLOGIES CO., LTD UFZ24N-F
UNISONIC TECHNOLOGIES CO., LTD UFZ24N-F 17A, 55V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UFZ24N-F is a N-channel enhancement mode power MOSFET using UTC s advanced technology to provide customers with
More informationTO Gate 2. Drain 3. Source. Item Sales Type Marking Package Packaging 1 SW P 088R06VT SW088R06VT TO-220 TUBE. Symbol Parameter Value Unit
Features High ruggedness Low R DS(ON) (Typ 10mΩ)@V GS =4.5V Low R DS(ON) (Typ 8.2mΩ)@V GS =10V Low Gate Charge (Typ 48nC) Improved dv/dt Capability 100% Avalanche Tested Application: Electronic Ballast,
More informationUNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC s advanced trench
More informationUNISONIC TECHNOLOGIES CO., LTD UTT200N03
UNISONIC TECHNOLOGIES CO., LTD UTT200N03 200A, 30V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT200N03 is a N-channel MOSFET using UTC s advanced technology to provide customers with a minimum on-state
More informationUNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 20NM60 Preliminary Power MOSFET 20A, 600V N-CHANNEL SUPER-JUNCTION MOSFET DESCRIPTION The UTC 20NM60 is a Super Junction MOSFET Structure and is designed to have better characteristics,
More information150V N-Channel Trench MOSFET
FEATURES Trench Power MOSFET Technology Low R DS(ON) Low Gate Charge Optimized For Fast-switching Applications TMP17N15A 15V N-Channel Trench MOSFET APPLICATIONS Synchronous Rectification in DC/DC and
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationUNISONIC TECHNOLOGIES CO., LTD 5N60K-MTQ Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD 5A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 5N60K-MTQ is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time,
More informationUNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF5305 Preliminary POWER MOSFET -31A, -55V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UF5305 is a P-channel Power MOSFET, it uses UTC s advanced technology to provide the
More informationTop View DFN5X6D PIN1 V DS V GS I D I DM I DSM I AS. 100ns V SPIKE 31 P D 12 P DSM. Junction and Storage Temperature Range T J, T STG
AON697 3V Dual Asymmetric N-Channel AlphaMOS General Description Latest Trench Power AlphaMOS (αmos LV) technology Very Low R DS (on) at 4.5V GS Low Gate Charge High Current Capability RoHS and Halogen-Free
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
More informationSMK0460IS Advanced N-Ch Power MOSFET
Advanced N-Ch Power MOSFET SWITCHING REGULATOR APPLICATION Features Drain-Source breakdown voltage: BV DSS =600V (Min.) Low gate charge: Q g =12nC (Typ.) Low drain-source On resistance: R DS(on) =2.1Ω
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 15A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 15N60 is an N-channel mode power MOSFET using UTC s advanced technology to provide costumers with planar stripe and DMOS
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationMMD50R380P 500V 0.38Ω N-channel MOSFET
MMD50R380P 500V 0.38Ω N-channel MOSFET Description MMD50R380P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide
More information