WNM2046 G S WNM2046. Descriptions. Features. Applications. Order information. Single N-Channel, 20V, 0.

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1 WNM2046 Single N-Channel, 20V, 0.71A, Power MOSFET (V) 20 Typical Rds(on) (Ω) =4.5V =2.5V =1.8V G S escriptions FN1006-3L The WNM2046 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R S (ON) with low gate charge. This device is suitable for use in C-C conversion, power switch and charging circuit. Standard Product WNM2046 is Pb-free. G S Features Pin configuration (Top view) Trench Technology Supper high density cell design Excellent ON resistance for higher C current Extremely Low Threshold Voltage Small package FN1006-3L 6 = evice Code * = Month (A~Z) Applications Marking Small Signal Switching Small Moto river Order information evice Package Shipping WNM2046-3/TR FN1006-3L 10K/Reel&Tape Will Semiconductor Ltd. 1 Aug, Rev.

2 Absolute Maximum ratings WNM2046 Parameter Symbol 10 S Steady State Unit rain-source Voltage 20 Gate-Source Voltage ±5 V Continuous rain Current a d T A =70 C A Maximum Power issipation a d P T A =70 C W Continuous rain Current b d 7 2 T A =70 C A Maximum Power issipation b d 8 4 P T A =70 C W Pulsed rain Current c M 1.4 A Operating Junction Temperature T J 150 C Lead Temperature T L 260 C Storage Temperature Range T stg -55 to 150 C Thermal resistance ratings Junction-to-Ambient Thermal Resistance a Junction-to-Ambient Thermal Resistance b Parameter Symbol Typical Maximum Unit t 10 s R θja Steady State t 10 s R θja Steady State Junction-to-Case Thermal Resistance Steady State R θjc C/W a Surface mounted on FR4 Board using 1 square inch pad size, 1oz copper b Surface mounted on FR4 board using minimum pad size, 1oz copper c Pulse width<380μs, Single pulse d Maximum junction temperature TJ=150 C. e Pulse test: Pulse width <380 us duty cycle <2%. Will Semiconductor Ltd. 2 Aug, Rev.

3 Electronics Characteristics (Ta=25 o C, unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS rain-to-source Breakdown Voltage BS = 0 V, = 250uA 20 V Zero Gate Voltage rain Current SS =16 V, = 0V 1 ua Gate-to-source Leakage Current I GSS = 0 V, =±5V ±5 ua ON CHARACTERISTICS Gate Threshold Voltage (TH) =, = 250uA V = 4.5V, = 0.55A rain-to-source On-resistance e R S(on) = 2.5V, = 5A mω V = 1.8V, I = 0.35A GS Forward Transconductance g FS V = 5 V, I = 0.55A 2.0 S S Total Gate Charge Q G(TOT) CHARGES, CAPACITANCES AN GATE RESISTANCE Input Capacitance C ISS 5 = 0 V, f = 100KHz, = Output Capacitance C OSS V Reverse Transfer Capacitance C RSS 8.3 pf 7 Threshold Gate Charge Q G(TH) = 4.5 V, = 10 V, 6 Gate-to-Source Charge Q GS = 0.55A 0.15 nc Gate-to-rain Charge Q G 7 SWITCHING CHARACTERISTICS Turn-On elay Time td(on) 34 Rise Time tr = 4.5 V, = 10V, 97.6 Turn-Off elay Time td(off) =0.55A, R G=6 Ω 606 ns Fall Time tf 318 BOY IOE CHARACTERISTICS Forward Voltage V S = 0 V, I S = 0.35A V Will Semiconductor Ltd. 3 Aug, Rev.

4 Typical Characteristics (Ta=25 o C, unless otherwise noted) S -rain to Source Current(A) =4V =3V =2.5V =1.8V =1.5V rain to Source Voltage(V) Output characteristics S - rain to Source Current (A) 1.4 =0.5V Gate to Source Voltage (V) Transfer characteristics T=-55 C T=125 C T=25 C 0.50 R S(on) - On-Resistance(Ω) =1.8V =2.5V =4.5V S - rain to Source Current(A) - On- Resisstance( Ω ) R dson =0.55A Gate to Source Voltage(V) On-Resistance vs. rain current On-Resistance vs. Gate-to-Source voltage Normalized On-Resistance 1.4 =4.5V =0.55A Temperature( o C) On-Resistance vs. Junction temperature Normalized Gate to Source Voltage =250uA Temperature( o C) Threshold voltage vs. Temperature Will Semiconductor Ltd. 4 Aug, Rev.

5 C - Capacitance(pF) rain-to-source Voltage (V) Capacitance =0V F=1 00KHz Ciss Coss Crss I S - Source to rain Current(A) 150 o C 25 o C V S - Source to rain Voltage(V) Body diode forward voltage Power (W) T J(Max) =150 C T A =25 C I - rain to Source Current (A) Limit by Rdson Single pulse C 10S M Limit 1ms 10ms 100ms 1S 0 1E Pulse width (S) BVdss Limit rain to Source Voltage (V) * >minimum at which R S(on) is specified Single pulse power Safe operating power 5 - Gate to Source Voltage(V) =10V =0.55A Qg(pC) Will Semiconductor Ltd. 5 Aug, Rev.

6 Normalized Effective Transient Thermal Impedance E uty cycle=0.5 single pulse 1E-4 1E-6 1E-5 1E-4 1E Square Wave Pulse uration (sec) PM 1. uty Cycle, =t1/t2 2. Per Unit Base =RθJA= 395 C/W 3. TJM-TA = PM RθJA 4. Surface Mounted t1 t2 Transient thermal response (Junction-to-Ambient) Will Semiconductor Ltd. 6 Aug, Rev.

7 Package outline dimensions FN1006-3L WNM2046 Recommend land pattern (Unit: mm) Note: This land pattern is for your reference only. Actual pad layouts may vary depending on application. 5 Will Semiconductor Ltd. 7 Aug, Rev.