WPM9435. P-Channel Enhancement Mode MOSFET. Description. Features. Application. Order information WPM9435

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1 WPM9435 P-Channel Enhancement Mode MOSFET escription The WPM9435 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, MOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Features -3V/-5A,RS(ON)= V -3V/-4A,RS(ON)= Super high density cell design for extremely low RS (ON) Exceptional on-resistance and maximum C current capability SOP 8P package design Application S S S G Power Management in Note book Portable Equipment Battery Powered System C/C Converter Load Switch WPM9435 YYWW YYWW = ate Code WPM9435= Specific evice Code Order information WPM9435-8/TR SOP-8P 25Tape&Reel Page /29 Rev.3

2 PIN ESCRIPTION Pin Symbol escription S Source 2 S Source 3 S Source 4 G Gate 5 rain 6 rain 7 rain 8 rain Absolute Maximum Ratings (TA=25 unless otherwise specified) V S rain-source voltage -3 V Gate-Source Voltage ±2 V Continuous rain Steady-State TA= A Current Steady-State TA=7-5. M Pulse rain Current -25 A P Power issipation TA= W TA=7.8 T J Operating Junction Temperature Range -55~5 Tstg Storage Temperature Range RJA Thermal Resistance-Junction to Ambient 7 /W Electrical Characteristics (TA=25 Unless otherwise noted) Parameter Symbol Conditions Min. Typ Max. Unit Static rain-source Breakdown Voltage V(BR)SS VGS=V,I=-25uA -3 Gate Threshold Voltage VGS(th) VS=VGS,I=-25uA Gate Leakage Current IGSS VS=V,VGS=±2V ± na VS=-3V,VGS=V - Zero Gate Voltage rain Current ISS VS=-3V,VGS=V TJ=85 - On-State rain Current I(on) VS= -5V,VGS =-4.5V - A VGS=-V,I=- 5A rain-source On-Resistance RS(on) VGS=-4.5V,I=-4.A Forward Transconductance gfs VS=- 5V,I=-5A 8 S iode Forward Voltage VS IS=-.3A,VGS =V V V ua Page 2 //29 Rev.3

3 ynamic Total Gate Charge Qg 8 VS=-5V,VGS=-V Gate-Source Charge Qgs.6 I= -3.5A Gate-rain Charge Qgd 3. Input Capacitance Ciss 45 VS=-5V,VGS=V Output Capacitance Coss 95 f=mhz Reverse Transfer Capacitance Crss 55 td(on) 8 8 Turn-On Time V=-5V,RL=5 tr 8 8 I-.A,VGEN=-V td(off) RG= Turn-Off Time tf nc pf ns Typical Performance Characteristis,rain Current(A) =V =6V =4V =3V V S,rain-Source voltage(v) R S(ON) ON Resistance(mOhm) =4.5V =6V =V , rain Current(A) rain Current VS rain-source voltage rain Current vs ON Resistance Page 3 /29 Rev.3

4 R S(ON) ON Resistance(Ohm).2.6 =5.7A ,Gate-Source Voltage(V),rain Current(A) V S =2V ,Gate-Source Voltage(V) Gate-Source Voltage vs ON Resistance rain Current VS Gate-Source Voltage.5.6 IS, Source-rain Current(A) Normalized On-Resistance.4.2 =-V =-4.5V =-5A V S,rain-Source voltage(v) rain Current VS Source-rain Current Temperature ( C) On-Resistance vs. Junction Page 4 /29 Rev.3

5 - (Volts) V S =-5V =-6A Q g (nc) Gate-Charge Characteristics Capacitance (pf) C iss C oss C rss V S (Volts) Capacitance Characteristics - (Amps). T J(Max) =5 C T A =25 C R S(ON) limited s s.s s ms ms C s. -V S (Volts) Maximum Forward Biased Safe Operating Area (Note E) Power (W) T J(Max) =5 C T A =25 C... Pulse Width (s) Single Pulse Power Rating Junction-to- Ambient (Note E) Z JA Normalized Transient Thermal Resistance =T on /T T J,PK =T A +P M.Z JA.R JA R JA =4 C/W In descending order =.5,.3,.,.5,.2,., single pulse THIS PROUCT HAS BEEN ESIGNE AN QUALIFIE FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL P COMPONENTS IN LIFE SUPPORT EVICES OR SYSTEMS ARE NOT AUTHORIZE. AOS OES. NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PROUCTS. AOS RESERVES THE RIGHT TO IMPROVE PROUCT ESIGN, T on FUNCTIONS AN RELIABILITY WITHOUT NOTICE. T Single Pulse Pulse Width (s) Normalized Maximum Transient Thermal Impedance Page 4 /29 Rev.3

6 Packaging Information SOP-8P Package Outline imension Page 5 /29 Rev.3