Complementary MOSFET

Transcription

1 General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V) P-channel Vds=-40V, Id=-7.2A, Rds(on)=42mΩ(Vgs=-10V) Vds=-40V, Id=-6.2A, Rds(on)=60mΩ(Vgs=-4.5V) Maximum Absolute Ratings Ta=25 C. Unless otherwise noted. Parameter Symbol N-ch (Max.) P-ch (Max.) Unit Drain-source voltage Vds V Gate-source voltage Vgs ±20 ±20 V Ta=25 C Continuous drain current(tj=150 C) Id A Ta=70 C Pulsed drain current Idm A Tc=25 C Power dissipation Pd W Tc=70 C Junction and storage temperature range Tj,Tstg -55 to to 150 C Thermal Characteristics Parameter Symbol Device Typ. Max. Unit Maximum junction-to-ambient Steady-state Rθja N-ch 62.5 C/W Maximum junction-to-ambient Steady-state Rθja P-ch 62.5 C/W Pin configuration Circuit SOP-8(TOP VIEW) Pin No. Pin name 1 SOURCE1 2 GATE1 3 SOURCE2 4 GATE2 5 DRAIN2 6 DRAIN2 7 DRAIN1 8 DRAIN1 N-ch G1 D1 S1 G2 P-ch D2 S2 8-1

2 Electrical Characteristics (N-ch) STATIC PARAMETERS Ta=25 C. Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Drain-source breakdown voltage BVdss Id=250μA, Vgs=0V 40 V Zero gate voltage drain current Idss Vds=32V, Vgs=0V Ta=85 C 10 Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 na Gate threshold voltage Vgs(th) Vds=Vgs, Id=250μA V On state drain current Id(on) Vgs=10V, Vds=5V 20 A Static drain-source on-resistance Rds(on) Vgs=10V, Id=8.0A mω Vgs=4.5V, Id=6.0A Forward transconductance Gfs Vds=15V, Id=5.0A 25 S Diode forward voltage Vsd Is=2A, Vgs=0V V Max.body-diode continuous current Is 1.5 A DYNAMIC PARAMETERS Input capacitance Complementary MOSFET Ciss Output capacitance Coss Vgs=0V, Vds=20V, f=1mhz 110 pf 1 μa 850 pf Reverse transfer capacitance Crss 75 pf SWITCHING PARAMETERS Total gate charge Qg nc Vgs=4.5V, Vds=20V, Gate-source charge Qgs 2.8 nc Id=5A Gate-drain charge Qgd 3.2 nc Turn-on delay time td(on) 6 12 ns Turn-on rise time tr Vgs=10V, Vds=20V, Id=5.0A ns Turn-off delay time td(off) RL=4Ω, Rgen=1Ω ns Turn-off fall time tf 6 12 ns 8-2

3 Complementary MOSFET Typical Electrical and Thermal Characteristics (N-ch) 8-3

4 Complementary MOSFET 8-4

5 Electrical Characteristics (P-ch) STATIC PARAMETERS Ta=25 C. Unless otherwise noted. Parameter Symbol Conditions Min. Typ. Max. Unit Drain-source breakdown voltage BVdss Id=-250μA, Vgs=0V -40 V Zero gate voltage drain current Idss Vds=-32V, Vgs=0V -1 Ta=85 C -20 Gate-body leakage current Igss Vds=0V, Vgs=±20V ±100 na Gate threshold voltage Vgs(th) Vds=Vgs, Id=-250μA V On state drain current Id(on) Vgs=-10V, Vds=-5V -20 A Static drain-source on-resistance Rds(on) Vgs=-10V, Id=-7.2A mω Vgs=-4.5V, Id=-6.2A Forward transconductance Gfs Vds=-15V, Id=-5A 20 S Diode forward voltage Vsd Is=-2A, Vgs=0V V Max. body-diode continuous current Is -1.7 A DYNAMIC PARAMETERS Input capacitance Complementary MOSFET Ciss Output capacitance Coss Vgs=0V, Vds=-20V, f=1mhz 145 pf μa 1100 pf Reverse transfer capacitance Crss 115 pf SWITCHING PARAMETERS Total gate charge Qg nc Vgs=-4.5V, Vds=-20V Gate-source charge Qgs 4.5 nc Id=-5A Gate-drain charge Qgd 6.5 nc Turn-on delay time td(on) ns Turn-on rise time tr Vgs=-4.5V, Vds=-20V ns Turn-off delay time td(off) Id=-5A, RL=4Ω, Rgen=1Ω ns Turn-off fall time tf ns 8-5

6 Complementary MOSFET Typical Electrical and Thermal Characteristics (P-ch) 8-6

7 Complementary MOSFET 8-7

8 Test circuit and waveform Complementary MOSFET 8-8