SMC3535K. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -5.8A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

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1 Single P-Channel MOSFET ESCRIPTION SMC33 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RS(ON), low gate charge and operation gate as.v. This device is suitable for use as a load switch or other general applications. PART NUMBER INFORMATION SMC 33 K - TR G a b c d e a : Company name. b : Product Serial number. c : Package code K:SOT-89 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant FEATURES VS = -3V, I = -.8A RS(ON)=mΩ(Typ.)@VGS=-V RS(ON)=mΩ(Typ.)@VGS=-.V RS(ON)=6mΩ(Typ.)@VGS=-.V Fast switch Low gate charge High power and current handling capability APPLICATIONS Portable Equipment Battery Powered System C-C Power Management G S G SOT-89 S ABSOLUTE MAXIMUM RATINGS (TA = C Unless otherwise noted ) Symbol Parameter Rating Units VSS rain-source Voltage -3 V VGSS Gate-Source Voltage ± V -.8 A I Continuous rain Current TA=7 C -.6 A IM Pulsed rain Current A -3 A.7 W P Power issipation B TA=7 C. W TJ Operation Junction Temperature -/ C TSTG Storage Temperature Range -/ C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s Thermal Resistance Junction to Ambient BC Steady-State 7 C/W

2 ELECTRICAL CHARACTERISTICS(TA = C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVSS rain-source Breakdown Voltage VGS=V, I=-μA -3 V RS(ON) rain-source On-Resistance VGS(th) Gate Threshold Voltage VS=VGS, I=-μA V IGSS Gate Leakage Current VS=V, VGS=±V ± na ISS Zero Gate Voltage rain Current VS=-3V, VGS=V, TJ= C - VS=-V, VGS=V, TJ=7 C - μa VGS=-.V, I=-A 6 mω VGS=-V, I=-.8A 8 VGS=-.V, I=-3A 6 78 Gfs Forward Transconductance VS=-V, I=-.8A 3 S iode Characteristics VS iode Forward Voltage IS=-A, VGS=V V IS Continuous Source Current -.9 A trr Reverse Recovery Time 6.8 ns IS=-.8A, dl/dt=a/μs Qrr Reverse Recovery Charge 9.8 nc ynamic and Switching Parameters Qg Total Gate Charge (V) 8.3 Qg Qgs Total Gate Charge (.V) Gate-Source Charge VS=-V, VGS=-V, I=-.8A Qgd Gate-rain Charge Ciss Input Capacitance Coss Output Capacitance VS=-V, VGS=V, f=mhz 8 Crss Reverse Transfer Capacitance 8 td(on). Turn-On Time tr V=-V, VGEN=-V,.9 td(off) RG=6Ω, I=-A Turn-Off Time tf.8 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)= C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)= C (initial temperature ). C. TJ(MAX)= C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. 77 nc pf ns The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet.

3 Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RS(ON)(mΩ) TYPICAL CHARACTERISTICS VGS=-3V VGS=-,-.,-6,-V VGS=-.V 8 VGS=-.V VGS=-.8V 6 VGS=-.V VGS=-.V VGS=-.V 3 VGS=-V 8 6 -VS-rain Source Voltage(V) Output Characteristics rain-source On Resistance 8 VS=-V I=-.8A Ciss 8 6 Qg-Gate Charge(nC) Gate Charge Crss Coss 3 -VS-rain Source Voltage(V) Capacitance Gate Threshold Voltage 7 Power issipation 3

4 -I (A) Normalized Transient Thermal Resistance Normalized On Resistance TYPICAL CHARACTERISTICS VGS=-V RS(ON) vs Junction Temperature 7 TJ-Case Temperature( C) rain Current vs TJ. µs ms ms ms C.. uty= t Single Pulse t uty Cycle, =t/t... - VS Voltage (V) Maximum Safe Operation Area..... Square Wave Pulse uration(sec) Thermal Transient Impedance -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VS Charge Gate Chrge Waveform Switching Time Waveform

5 SOT-89 PACKAGE IMENSIONS A E b E e e b c Symbol imensions In Millimeters imensions In Inches Min. Max. Min. Max. A b b c E E e e L θ