FKD4903. N-Ch and P-Ch Fast Switching MOSFETs

Size: px
Start display at page:

Download "FKD4903. N-Ch and P-Ch Fast Switching MOSFETs"

Transcription

1 FKD93 % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID V 3mΩ 3A -V 5mΩ -A Description The FKD93 is the high performance complementary N-ch and P-ch MOSFETs with high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD93 meet the RoHS and Green Product requirement % EAS guaranteed with full function reliability approved. TO5 Pin Configuration Absolute Maximum Ratings Rating Symbol Parameter N-Ch P-Ch Units VDS Drain-Source Voltage - V VGS Gate-Source Voltage ± ± V ID@TC=5 Continuous Drain Current, V 3 - A ID@TC= Continuous Drain Current, V - A IDM Pulsed Drain Current - A EAS Single Pulse Avalanche Energy 3 mj IAS Avalanche Current A PD@TC=5 Total Power Dissipation W TSTG Storage Temperature Range -55 to 5-55 to 5 TJ Operating Junction Temperature Range -55 to 5-55 to 5 Thermal Data Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction-Ambient --- /W RθJC Thermal Resistance Junction-Case /W

2 FKD93 N-Channel Electrical Characteristics (T J=5, unless otherwise noted) BVDSS Drain-Source Breakdown Voltage VGS=V, ID=5uA V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 5, ID=mA V/ RDS(ON) Static Drain-Source On-Resistance VGS=V, ID=A VGS=.5V, ID=A m VGS(th) Gate Threshold Voltage..5.5 V VGS=VDS, ID =5uA VGS(th) VGS(th) Temperature Coefficient mv/ IDSS VDS=3V, VGS=V, TJ= Drain-Source Leakage Current ua VDS=3V, VGS=V, TJ= IGSS Gate-Source Leakage Current VGS=±V, VDS=V ± na gfs Forward Transconductance VDS=5V, ID=A S Rg Gate Resistance VDS=V, VGS=V, f=mhz Qg Total Gate Charge (.5V) Qgs Gate-Source Charge VDS=V, VGS=.5V, ID=A nc Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time VDD=V, VGS=V, RG= ns Td(off) Turn-Off Delay Time ID=A Tf Fall Time Input Capacitance Coss Output Capacitance VDS=5V, VGS=V, f=mhz pf Crss Reverse Transfer Capacitance Diode Characteristics IS Continuous Source Current, A VG=VD=V, Force Current ISM Pulsed Source Current, A VSD Diode Forward Voltage VGS=V, IS=A, TJ= V Note :.The data tested by surface mounted on a inch FR- board with OZ copper..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD=5V,V GS=V,L=.mH,I AS=7.A.The power dissipation is limited by 5 junction temperature 5.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation.

3 FKD93 P-Channel Electrical Characteristics (T J=5, unless otherwise noted) BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-5uA V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 5, ID=-mA V/ RDS(ON) Static Drain-Source On-Resistance VGS=-V, ID=-A VGS=-.5V, ID=-A m VGS(th) Gate Threshold Voltage V VGS=VDS, ID =-5uA VGS(th) VGS(th) Temperature Coefficient mv/ IDSS VDS=-3V, VGS=V, TJ= Drain-Source Leakage Current ua VDS=-3V, VGS=V, TJ= IGSS Gate-Source Leakage Current VGS=±V, VDS=V ± na gfs Forward Transconductance VDS=-5V, ID=-A S Rg Gate Resistance VDS=V, VGS=V, f=mhz Qg Total Gate Charge (-.5V) Qgs Gate-Source Charge VDS=-V, VGS=-.5V, ID=-A nc Qgd Gate-Drain Charge Td(on) Turn-On Delay Time Tr Rise Time VDD=-5V, VGS=-V, RG=3.3, ns Td(off) Turn-Off Delay Time ID=-A Tf Fall Time Input Capacitance Coss Output Capacitance VDS=-5V, VGS=V, f=mhz pf Crss Reverse Transfer Capacitance Diode Characteristics IS Continuous Source Current, A VG=VD=V, Force Current ISM Pulsed Source Current, A VSD Diode Forward Voltage VGS=V, IS=-A, TJ= V Note :.The data tested by surface mounted on a inch FR- board with OZ copper..the data tested by pulsed, pulse width 3us, duty cycle % 3.The EAS data shows Max. rating. The test condition is V DD=-5V,V GS=-V,L=.mH,I AS=-7.A.The power dissipation is limited by 5 junction temperature 5.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation. 3

4 FKD93 N-Channel Typical Characteristics I D =A V GS =V ID Drain Current (A) V GS =7V V GS =5V V GS =.5V V GS =3V RDSON(mΩ) V DS Drain-to-Source Voltage (V) V GS (V) Fig. Typical Output Characteristics Fig. On-Resistance vs. G-S Voltage IS Source Current(A) T J =5 T J = V SD, Source-to-Drain Voltage (V) Fig.3 Forward Characteristics of Reverse VGS Gate to Source Voltage (V) V DS =V I D =A Q G, Total Gate Cha Fig. Gate-Charge Characteristics.. Normalized VGS(th).. Normalized On Resistance T J,Junction Temperature ( ) T J, Junction Temperature ( ) Fig.5 Normalized V GS(th) vs. T J Fig. Normalized R DSON vs. T J

5 FKD93 F=.MHz us Capacitance (pf) Coss Crss V DS Drain to Source Voltage (V) ID (A) T C =5 Single Pulse us ms ms DC. V DS (V) Fig.7 Capacitance Fig. Safe Operating Area Normalized Thermal Response (Rthjc).. DUTY= SINGLE PULSE..... t, Pulse Width (s) PDM Ton D = Ton/T Tj peak = TC + PDM x Rthjc T Fig.9 Normalized Maximum Transient Thermal Impedance V DS 9% EAS= BV DSS L x I AS x BV DSS BV DSS -V DD V DD % I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig. Switching Time Waveform Fig. Unclamped Inductive Switching Wave 5

6 FKD93 P-Channel Typical Characteristics -ID Drain Current (A) V GS =-V V GS =-7V V GS =-5V V GS =-.5V V GS =-3V RDSON(mΩ I D = V DS Drain-to-Source Voltage (V) 3 -V GS (V) Fig. Typical Output Characteristics Fig. On-Resistance v.s Gate-Source -IS Source Current(A) T J =5 T J = V SD, Source-to-Drain Voltage (V) -VGS Gate to Source Voltage (V) V DS =-V I D =-A Q G, Total Gate Cha Fig.3 Forward Characteristics of Reverse Fig. Gate-Charge Characteristics.5. Normalized -VGS(th).5 Normalized On Re T J,Junction Temperature ( ) T J, Junction Temper ) Fig.5 Normalized V GS(th) v.s T J Fig. Normalized R DSON v.s T J

7 FKD93 F=.MHz. Capacitance (pf) Coss Crss V DS Drain to Source Voltage(V) Fig.7 Capacitance -ID (A).... Tc=5 o C Single Pulse us ms ms ms DC. -V DS (V) Fig. Safe Operating Area Normalized Thermal Response (RθJC). DUTY= SINGLE PULSE t, Pulse Width (s) P DM T ON D = T ON /T Fig.9 Normalized Maximum Transient Thermal Impedance T T J peak = T C + P DM x R θjc Fig. Switching Time Waveform Fig. Unclamped Inductive Waveform 7

Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V

Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage ±20 V % EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID 3V mω A Description TO Pin Configuration

More information

PKP3105. P-Ch 30V Fast Switching MOSFETs

PKP3105. P-Ch 30V Fast Switching MOSFETs Super Low Gate Charge % EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary BVDSS RDSON ID -3V mω -6A Description TO22 Pin

More information

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case

Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.

PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration. General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Complementary MOSFET

Complementary MOSFET General Description uses advanced trench technology to provide excellent Rds(on) and low gate charge. Complementary MOSFET Features N-channel Vds=40V, Id=8.0A, Rds(on)=22mΩ(Vgs=10V) Vds=40V, Id=6.0A, Rds(on)=28mΩ(Vgs=4.5V)

More information

Product Summery. Applications

Product Summery. Applications General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter

More information

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ

SSG4501-C N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7A, 30 V, R DS(ON) 28mΩ P-Ch: -5.3A, -30 V, R DS(ON) 50mΩ RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

More information

N-Channel VDS = 30V, ID = 7.8A. 10V. -4.5V. P-Channel VDS = -30V, ID = -7A

N-Channel VDS = 30V, ID = 7.8A. 10V. -4.5V. P-Channel VDS = -30V, ID = -7A Complementary MOSFET DESCRIPTION The SMC59 is the N+P-Channel Complementary mode power field effect transistors are using trench DMOS technology. advanced trench technology to provide excellent RDS(ON).

More information

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2

P-Channel MOSFET SI2369DS-HF (KI2369DS-HF) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage VDS -30 VGS ±20 *1*2 *1*2 *1*2 *1*2 Features VDS (V) =-3V ID =-7.6A (VGS =±V) RDS(ON) < 9mΩ (VGS =-V) RDS(ON) < 34mΩ (VGS =-6V) RDS(ON) < 4mΩ (VGS =-4.5V).8 -. +. SOT-3-3 3.9 -. +..4 -. +..95 -. +..9 -. +. +. -..6.4.55 Unit: mm.5 -. +. -..68

More information

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION

STN4420. N-Channel Enhancement Mode MOSFET. 30V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE APPLICATIONS PIN CONFIGURATION DESCRIPTION The STN is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is suitable

More information

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )

SGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 ) SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET

More information

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10.

VDS = 20V, ID = 13A. Pin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 13 A TA=70 C 10. Dual N-Channel MOSFET DESCRIPTION FEATURES SMC4228 is the Dual N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored

More information

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3332S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC333S Single N-Channel MOSFET DESCRIPTION SMC333 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC6216SN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 3.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC66SN Single N-Channel MOSFET DESCRIPTION SMC66 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V

Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V Single P-Channel MOSFET DESCRIPTION SMC5455 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize

More information

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S

SI-TECH SEMICONDUCTOR CO.,LTD S85N10R/S N-Channel MOSFET Features 85V,100A,Rds(on)(typ)=5.8mΩ @Vgs=10V High Ruggedness Fast Switching 100% Avalanche Tested Improved dv/dt Capability General Description This Power MOSFET is produced using Si-Tech

More information

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage

N-Channel MOSFET IRLML0100 (KRLML0100) Symbol Rating Unit Drain-Source Voltage Gate-Source Voltage N-Channel IRLML (KRLML) SOT-2 2.9 -. +..4 -. +. Unit: mm Features VDS (V) = V ID =.6A (VGS = V) RDS(ON) < 22mΩ (VGS = V) RDS(ON) < 25mΩ (VGS = 4.5V) G 2.4 -. +. 2.95 -. +..9 -. +.. -. +. 5.4. -. +.5 S

More information

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

STP4435. P-Channel Enhancement Mode MOSFET. -30V P-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION DESCRIPTION The STP35 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). This device is

More information

SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel MOSFET SI2333DS-HF (KI2333DS-HF)   Features. Absolute Maximum Ratings Ta = 25 P-Channel SOT-.9 -.. -. Unit: mm Features VDS (V) =-V ID =-5. A (VGS =-.5V) RDS(ON) < mω (VGS =-.5V) RDS(ON) < mω (VGS =-.5V). -..95 -..9 -.. -..55.. -. +.5 RDS(ON) < 59mΩ (VGS =-.V) Pb Free Package May

More information

Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A

Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A SMC22H Single P-Channel MOSFET DESCRIPTION SMC22 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored

More information

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3404S. Single N-Channel MOSFET FEATURES VDS = 30V, ID = 6.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC3S Single N-Channel MOSFET DESCRIPTION SMC3 is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8" from case for 5 seconds

TC = 25 C unless otherwise noted. Maximum lead temperature for soldering purposes, 300 1/8 from case for 5 seconds General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@ = 10 V This advanced technology has been especially

More information

STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION

STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation

More information

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3223S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.5A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC33S Single P-Channel MOSFET DESCRIPTION SMC33 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMCSN Single N-Channel MOSFET DESCRIPTION SMC is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3251S. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION Single P-Channel MOSFET DESCRIPTION SMC5 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high

More information

I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220

I2-PAK I-PAK. TC = 25 C unless otherwise noted D2-PAK/D-PAK I2-PAK / I-PAK/ TO-220 General Description This Power MOSFET is produced Features using Maple semi s Advanced Super-Junction technology. - 7.6A, 500V, R DS(on) typ. = 0.5Ω@V GS = 10 V This advanced technology has - been Low

More information

PFU70R360G / PFD70R360G

PFU70R360G / PFD70R360G FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power

More information

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET IRLML6401 (KRLML6401)  Features. Absolute Maximum Ratings Ta = 25 SMD Type P-Channel Enhancement IRLML640 (KRLML640) Features Ultra low on-resistance. P-Channel. Fast switching. 2.4 - + SOT-23 3 2.9 - + 0.4 - + 2.3 - + 0.55 0.4 Unit: mm 0.95 - +.9 - + -0.0 +0.05 0-0.38

More information

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

SMC3323SN. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.1A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS SMC333SN Single P-Channel MOSFET DESCRIPTION SMC333 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2366DS-HF (KI2366DS-HF)   Features. Absolute Maximum Ratings Ta = 25 SOT-.9 -. +.. -. +. Unit: mm Features VDS (V) = V ID =.8 A (VGS = V) RDS(ON) < 6mΩ (VGS = V) RDS(ON) < mω (VGS =.V). -. +..9 -. +..9 -. +.. -. +.... -. +. Pb Free Package May be Available. The G Suffix

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS) Features. Absolute Maximum Ratings Ta = 25

SMD Type. P-Channel Enhancement MOSFET SI2333CDS (KI2333CDS)   Features. Absolute Maximum Ratings Ta = 25 P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S

More information

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C

Symbol Parameter Typ Max Units Thermal Resistance Junction to Ambient C t 10s 62 Thermal Resistance Junction to Ambient C SMC93M Dual P-Channel MOSFET DESCRIPTION SMC93 is the Dual P-Channel enhancement mode power field effect transistors are using trench DMOS technology.this advanced technology has been especially tailored

More information

Complementary MOSFET

Complementary MOSFET General Description ELM66EA-S uses advanced trench technology to provide excellent Rds(on) and low gate charge. Maximum Absolute Ratings ELM66EA-S N-channel P-channel Vds=V Vds=-V Id=3.A(Vgs=.V) Id=-.A(Vgs=-.V)

More information

SPN230T06. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control

SPN230T06. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control DESCRIPTION The is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially tailored

More information

SPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter

SPN9910. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch Synchronous Buck Converter DESCRIPTION The SPN9910 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

SJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013

SJ-FET. TSA20N60S, TSK20N60S 600V N-Channel MOSFET. September, 2013 TSA20N60S, TSK20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

More information

SSP20N60S / SSF20N60S 600V N-Channel MOSFET

SSP20N60S / SSF20N60S 600V N-Channel MOSFET SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 800V Super Junction Power Transistor SS*80R380S SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power Transistor SS*80R380S Rev. 1.2 Oct. 2017 September, 2013 SJ-FET SSF80R380S/SSP80R380S/SSW80R380S/SSA80R380S

More information

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF) Features. Absolute Maximum Ratings Ta = 25

SMD Type. N-Channel MOSFET SI2318CDS-HF (KI2318CDS-HF)   Features. Absolute Maximum Ratings Ta = 25 N-Channel SI8CDS-HF (KI8CDS-HF) Features VDS (V) = V ID =.6 A (VGS = V) RDS(ON) < mω (VGS = V) RDS(ON) < mω (VGS =.V) Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish D.8 -.

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12*

Symbol Parameter TSB20N60S TSP20N60S TSF20N60S Unit 20* 20* I D -Continuous (TC = 100 ) 12* TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance

More information

SJ-FET TSD5N60S/TSU5N60S

SJ-FET TSD5N60S/TSU5N60S September, 2013 SJ-FET TSD5N60S/TSU5N60S OSD5N60S/OSU5N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism

More information

Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5*

Symbol Parameter TSB10N60S TSP10N60S TSF10N60S Unit V DSS Drain-Source Voltage 600 V Drain Current -Continuous (TC = 25 ) 9.5* TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance

More information

n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight

n Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International

More information

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC7002ESN. Single N-Channel MOSFET FEATURES VDS = 60V, ID = 0.3A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC7ESN Single N-Channel MOSFET DESCRIPTION SMC7E is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

TO-252 Pin Configuration

TO-252 Pin Configuration WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.

More information

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100

Parameter Symbol Limit Unit IDM 20 A T A = PD T A =100 Features: Super high dense cell design for low R DS(ON) Rugged and reliable Surface Mount Package B VDSS =20V, R DS(ON) =24.5mΩ ID=6A Application DC-DC converters Power management in portable and Battery-powered

More information

Dual N - Channel Enhancement Mode Power MOSFET 4502

Dual N - Channel Enhancement Mode Power MOSFET 4502 Dual N - Channel Enhancement Mode Power MOSFET 4 344 DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or

More information

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE

AM3400A MOSFET 30V N-CHANNEL ENHANCEMENT MODE DESCRIPTION is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION

SMC3407GS. Single P-Channel MOSFET FEATURES VDS = -30V, ID = -4.2A DESCRIPTION APPLICATIONS PART NUMBER INFORMATION SMC7GS Single P-Channel MOSFET DESCRIPTION SMC7G is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited

More information

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 600V Super Junction Power Transistor SS*20N60S. Rev. 1.

SUPER-SEMI SUPER-MOSFET. Super Junction Metal Oxide Semiconductor Field Effect Transistor. 600V Super Junction Power Transistor SS*20N60S. Rev. 1. SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.04 September, 2013 SSW20N60S/SSA20N60S 600V N-Channel MOSFET

More information

SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary

SURFACE MOUNT (SMD-1) 100V, P-CHANNEL. Absolute Maximum Ratings. Product Summary PD-9454A HEXFET POWER MOSFET SURFACE MOUNT (SMD-) IRF5N52 V, P-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF5N52 -V.6Ω -3A Fifth Generation HEXFET power MOSFETs from International Rectifier

More information

MOSFET SI4558DY (KI4558DY)

MOSFET SI4558DY (KI4558DY) Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V). +.4 -. Source Gate 3 Source 4 Gate

More information

PFP15T140 / PFB15T140

PFP15T140 / PFB15T140 FEATURES 1% EAS Test Super high density cell design Extremely Low Intrinsic Capacitances Remarkable Switching Characteristics Extended Safe Operating Area Lower R DS(ON) : 6. mω (Typ.) @ =1V 15V N-Channel

More information

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel

Complementary Trench MOSFET AO4629 (KO4629) SOP P-channel Features N-Channel VDS (V) = 3V ID = A (VGS = V) RDS(ON) < 3mΩ (VGS = V) RDS(ON) < 4mΩ (VGS = 4.V) P-Channel VDS (V) = -3V ID = -. A (VGS = -V) RDS(ON) < 4mΩ (VGS = -V) RDS(ON) < 74mΩ (VGS = -4.V) SOP-8.

More information

SPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control

SPN180T10. N-Channel Enhancement Mode MOSFET. AC/DC Synchronous Rectifier Load Switch UPS Power Tool Motor Control DESCRIPTION The SPN180T10 is the N-Channel enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE

AM7414 MOSFET N-CHANNEL ENHANCEMENT MODE DESCRIPTION The is available in DFN8(3x3) Package ORDERING INFORMATION Package Type Part Number DFN8(3x3) J8R J8 SPQ: 5,000pcs/Reel J8VR V: Halogen free Package Note R: Tape & Reel AiT provides all RoHS

More information

Features Package Applications Key Specifications Internal Equivalent Circuit Absolute maximum ratings

Features Package Applications Key Specifications Internal Equivalent Circuit  Absolute maximum ratings DKG2 Aug. 2 Features Low on-state resistance Built-in gate protection diode SMD PKG Package TO252 Applications DC / DC converter Switching Internal Equivalent Circuit D(2) Key Specifications V (BR)DSS

More information

N-Channel Enhancement Mode MOSFET

N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V

Features. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,

More information

MEI. 20V P-Channel Enhancement-Mode MOSFET P2301BLT1G. Features. Simple Drive Requirement Small Package Outline Surface Mount Device G 1 2 V DS -20

MEI. 20V P-Channel Enhancement-Mode MOSFET P2301BLT1G. Features. Simple Drive Requirement Small Package Outline Surface Mount Device G 1 2 V DS -20 V P-Channel Enhancement-Mode MOSFET VDS= -V RDS(ON), Vgs@-.5V, Ids@-.A = mω RDS(ON), Vgs@-.5V, Ids@-.A = 15 mω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance

More information

TO-220 G D S. T C = 25 C unless otherwise noted

TO-220 G D S. T C = 25 C unless otherwise noted 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density

More information

IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features: 1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED

IRFF9130 JANS2N6849 JANTXV2N V, P-CHANNEL. Absolute Maximum Ratings. Features:   1 PD D. REPETITIVE AVALANCHE AND dv/dt RATED PD - 90550D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) Product Summary Part Number BVDSS RDS(on) ID IRFF9130-100V 0.30Ω -6.5A IRFF9130 JANTX2N6849 JANTXV2N6849 JANS2N6849

More information

P-Channel Enhancement Mode MOSFET

P-Channel Enhancement Mode MOSFET Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of

More information

PIN CONFIGURATION(SOP 8P)

PIN CONFIGURATION(SOP 8P) DESCRIPTION The SPN4842 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored

More information

DFN3X3-8 Pin Configuration. Units Symbol. Parameter

DFN3X3-8 Pin Configuration. Units Symbol. Parameter General Description Product Summery Description The WSD20L75DN uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC

THERMAL RESISTANCE RATINGS THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS Junction-to-Case R θjc 6 C / W Junction-to-Ambient R θja 42 C / W STATIC N- & annel Enhancement Mode P3ND5G PRODUCT SUMMARY V (BR)DSS R DS(ON) I D annel 3 mω 5A annel -3 36mΩ -9A G D S G D S D/D SG S G G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 5 C Unless

More information

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6

S2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6 Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.

More information

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching

IRHNJ67130 SURFACE MOUNT (SMD-0.5) REF: MIL-PRF-19500/746. Absolute Maximum Ratings PD-95816D. Features: n Low RDS(on) n Fast Switching PD-9586D RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) IRHNJ673 JANSR2N7587U3 V, N-CHANNEL REF: MIL-PRF-95/746 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7624U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, P-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-9732 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) 2N7624U3 IRHLNJ79734 6V, P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ79734 K Rads (Si).72Ω

More information

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C

IRHNM57110 SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/743. Product Summary. Absolute Maximum Ratings PD-97192C PD-9792C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM57 JANSR2N753U8 V, N-CHANNEL REF: MIL-PRF-95/743 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings

IRHNM SURFACE MOUNT (SMD-0.2) REF: MIL-PRF-19500/749. Product Summary. Absolute Maximum Ratings PD-9779B RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.2) Product Summary IRHNM597 JANSR2N756U8 V, P-CHANNEL REF: MIL-PRF-95/749 5 TECHNOLOGY Part Number Radiation Level RDS(on) ID QPL Part Number

More information

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings

2N7606U3 LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-0.5) 60V, N-CHANNEL TECHNOLOGY. Absolute Maximum Ratings PD-973B RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID IRHLNJ7734 K Rads (Si).35Ω 22A* IRHLNJ7334 3K Rads (Si).35Ω 22A* 2N766U3

More information

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D

IRHF57034 THRU-HOLE (TO-39) REF: MIL-PRF-19500/701. Absolute Maximum Ratings PD-93791D PD-9379D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF5734 K Rads (Si).48Ω 2A* JANSR2N7492T2 IRHF5334 3K Rads (Si).48Ω 2A*

More information

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A

TECHNOLOGY SURFACE MOUNT (LCC-6) 0.89A -0.65A 0.89A -0.65A 2N7632UC IRHLUC767Z4 RADIATION HARDENED 6V, Combination N-P-CHANNEL LOGIC LEVEL POWER MOSFET TECHNOLOGY SURFACE MOUNT (LCC-6) Product Summary Part Number Radiation Level R DS(on) I D CHANNEL IRHLUC767Z4

More information

IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL

IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/ V, N-CHANNEL PD - 90429D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE (TO-205AF) IRFF420 JANTX2N6794 JANTXV2N6794 REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)

More information

IRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C.

IRFE230 JANTXV2N6798U SURFACE MOUNT (LCC-18) 200V, N-CHANNEL REF:MIL-PRF-19500/557. Absolute Maximum Ratings PD-91715C. PD-975C REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-8) Product Summary Part Number BVDSS RDS(on) ID IRFE230 200V 0.40Ω 5.5A IRFE230 JANTX2N6798U JANTXV2N6798U REF:MIL-PRF-9500/557

More information

800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A. N-Channel MOSFET. General Description. Features. Pin Configuration TO-220 TO-220F

800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A. N-Channel MOSFET. General Description. Features. Pin Configuration TO-220 TO-220F 800V/4A N-Channel MOSFET 800V/4A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction

More information

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary

IRHNJ67234 SURFACE MOUNT (SMD-0.5) PD-97197C REF: MIL-PRF-19500/746. Absolute Maximum Ratings. Product Summary PD-9797C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-.5) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHNJ67234 K Rads (Si).2Ω 2.4A JANSR2N7593U3 IRHNJ63234 3K Rads (Si).2Ω

More information

IRF9230 JANTXV2N6806

IRF9230 JANTXV2N6806 PD-90548D REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE -TO-204AE (TO-3) Product Summary Part Number BVDSS RDS(on) ID IRF9230-200V 0.80 Ω -6.5A IRF9230 JANTX2N6806 JANTXV2N6806 REF:MIL-PRF-19500/562

More information

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C

POWER MOSFET SURFACE MOUNT (SMD-1) 200V, N-CHANNEL. Absolute Maximum Ratings PD-94236C PD-94236C RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-) IRHN5725SE 2V, N-CHANNEL 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHN5725SE K Rads (Si).6Ω 3A SMD- International

More information

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool

SPN80T06. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Motor Control Power Tool DESCRIPTION The SPN80T06 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially

More information

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary

2N7617UC IRHLUC770Z4 60V, DUAL-N CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) Product Summary PD-97573 RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-6) 2N767UC IRHLUC77Z4 6V, DUAL-N CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLUC77Z4 K Rads (Si).75Ω.89A

More information

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)

IRHF7230 JANSR2N V, N-CHANNEL REF: MIL-PRF-19500/601 RAD-Hard HEXFET TECHNOLOGY RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) PD - 90672E RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number IRHF7230 100K Rads (Si) 0.35Ω 5.5A JANSR2N7262 IRHF3230 300K Rads (Si)

More information

30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using h

30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using h 30V N-Channel Enhancement Mode MOSFET DESCRIPTION The UP8404 is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density advanced trench technology.. This

More information

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm

Device Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings

IRHF57133SE THRU-HOLE (TO-39) REF: MIL-PRF-19500/706. Absolute Maximum Ratings PD - 94334B RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF5733SE JANSR2N7497T2 3V, N-CHANNEL REF: MIL-PRF-95/76 5 TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID QPL Part Number

More information

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A

VGS = 4.5V, TC = 25 C Continuous Drain Current 2.6 A PD-9726A RADIATION HARDENED LOGIC LEVEL POWER MOSFET SURFACE MOUNT (LCC-28) Product Summary Part Number Radiation Level RDS(on) ID IRHLQ7724 K Rads (Si).Ω 2.6A IRHLQ7324 3K Rads (Si).Ω 2.6A International

More information

IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL

IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/ V, N-CHANNEL PD - 93986A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS SURFACE MOUNT (LCC-18) IRFE420 JANTX2N6794U JANTXV2N6794U REF:MIL-PRF-19500/555 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on)

More information

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B

SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL. Absolute Maximum Ratings PD-94401B PD-9440B RAD-HARD SYNCHRONOUS RECTIFIER SURFACE MOUNT (SMD-2) 60V, N-CHANNEL Product Summary Part Number Radiation Level RDS(on) QG 00K Rads (Si) 6.mΩ 60nC IRHSLNA53064 300K Rads (Si) 6.mΩ 60nC IRHSLNA54064

More information

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary

2N7630M2 THRU-HOLE (14-LEAD FLAT PACK) TECHNOLOGY. Product Summary PD-9736 RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (4-LEAD FLAT PACK) 2N763M2 IRHLA797Z4 6V, Quad P-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) ID IRHLA797Z4 K Rads

More information

Parameter Symbol Limit Unit

Parameter Symbol Limit Unit N-Channel Enhancement Mode Power MOSFET Description The PE3050K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.

More information

SOP-8 Pin Configuration

SOP-8 Pin Configuration WSP8 General Description Product Summery The WSP8 is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous

More information

N & P-Channel 100-V (D-S) MOSFET

N & P-Channel 100-V (D-S) MOSFET N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives

More information

SIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY

SIS2040 V V Complementary MOSFET. General Features. N-Channel PRODUCT SUMMARY. P-Channel PRODUCT SUMMARY 20V Complementary MOSFET General Features N-Channel PRODUCT SUMMARY VDSS ID RDS(ON)(mΩ) Typ 20 @ VGS=4.5V 20V 4.5A 25 @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged SOT-23-6L package P-Channel

More information

STM6716. N-Channel Logic Level Enhancement Mode Field Effect Transistor

STM6716. N-Channel Logic Level Enhancement Mode Field Effect Transistor Green Product SamHop Microelectronics Corp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max 2.5 @ VGS=V 6V 6 @ VGS=4.5V FETURES Super high dense cell

More information