Symbol Parameter Rating Units VDSS Drain-Source Voltage -40 V VGSS Gate-Source Voltage ±20 V
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1 Single P-Channel MOSFET DESCRIPTION SMC5455 is the P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior, fast switching performance, and withstand high energy pulse in the avalanche and commutation mode.these devices are well suited for high efficiency fast switching applications. PART NUMBER INFORMATION SMC 5455 H - TR G a b c d e a : Company name. b : Product Serial number. c : Package code H:TO-252 d : Handling code TR:Tape&Reel e : Green produce code G:RoHS Compliant FEATURES VDS = -4V, ID = -42A RDS(ON)=2.5mΩ(Typ.)@VGS=-V RDS(ON)=6mΩ(Typ.)@VGS=-4.5V % UIS and Rg tested High power and current handling capability APPLICATIONS LED Application Power Management G S TO-252 D G D S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage -4 V VGSS Gate-Source Voltage ±2 V ID Continuous Drain Current TC=25 C -42 A TC= C A IDM Pulsed Drain Current A -68 A ID Continuous Drain Current TA=25 C -5 A TA=7 C -2 A PD Power Dissipation B TA=25 C 6.3 W TA=7 C 4 W IAS Avalanche Current A -35 A EAS Single Pulse Avalanche energy L=.mH AF 6 mj PD Power Dissipation C TC=25 C 48 W TC= C 9 W TJ Operation Junction Temperature -55/5 C TSTG Storage Temperature Range -55/5 C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 25 Thermal Resistance Junction to Ambient BD 5 C/W Steady-State RθJC Thermal Resistance Junction to Case 2.6 Rev.A
2 ELECTRICAL CHARACTERISTICS(TA = 25 C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=-25μA -4 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-25μA V IGSS Gate Leakage Current VDS=V, VGS=±2V ± na IDSS Zero Gate Voltage Drain Current VDS=-4V, VGS=V, TJ=25 C - VDS=-32V, VGS=V, TJ=75 C - μa Drain-source On-Resistance E VGS=-V, ID=-5A VGS=-4.5V, ID=-A 6 2 mω Gfs Forward Transconductance VDS=-V, ID=-4A 32 S RDS(ON) Diode Characteristics VSD Diode Forward Voltage E IS=-A, VGS=V V IS Continuous Source Current -2 A Dynamic and Switching Parameters Qg Total Gate Charge (V) 4 54 Qg Total Gate Charge (4.5V) VDS=-2V, VGS=-V Qgs Gate-Source Charge ID=-A 4.9 Qgd Gate-Drain Charge 8.8 Ciss Input Capacitance Coss Output Capacitance VDS=-2V, VGS=V, f=mhz Crss Reverse Transfer Capacitance Rg Gate Resistance VGS=V, VDS=V, F=MHZ Ω td(on) 9.7 Turn-On Time E tr VDD=-2V, VGEN=-V, 9.2 td(off) RG=3Ω ID=-A 96 Turn-Off Time E tf 32 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)=5 C. B. Measure the value in a still air environment at TA=25 C, using an installation mounted on a in2 FR-4 board, maximum junction temperature TJ(MAX)=5 C. C. Using junction-to-case thermal resistance, dissipation limit in the case of additional heat. D. TJ(MAX)=5 C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used. E. The pulse test width is 3μs and the duty cycle 2%. F. The EAS data shows Maximum, tested and pulse width limited by maximum. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. nc pf ns Rev.A 2
3 Normalized Threshold Voltage Ptot-Power(W) -VGS(V) Capacitance(pF) RDS(ON)(mΩ) TYPICAL CHARACTERISTICS VGS=-5, -6,-V VGS=-4.5V 4 32 TA=25 C VGS=-4.V 6 VGS=-4.5V 4 2 VGS=-3.5V 8 VGS=-V VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance 8 VDS=-2V ID=-A Ciss Qg-Gate Charge(nC) Gate Charge 5 Crss Coss VDS-Drain Source Voltage(V) Capacitance TC=25 C Gate Threshold Voltage Power Dissipation Rev.A 3
4 -ID (A) Normalized Transient Thermal Resistance Normalized On Resistance TYPICAL CHARACTERISTICS TC=25 C RDS(ON) vs Junction Temperature TC-Case Temperature( C) Drain Current vs TC Tc=25 C µs µs ms ms DC.. Duty= t Single Pulse.. -VDS Voltage (V) Maximum Safe Operation Area Single Pulse..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance t2 Duty Cycle, D=t/t2 -VGS Ton Toff V Qg VGS Td(on) Tr Td(off) Tf Qgs Qgd 9% % VDS Charge Gate Chrge Waveform Switching Time Waveform Rev.A 4
5 TO-252 PACKAGE DIMENSIONS Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A b b b c c D D E E e BSC..9 BSC. H L L REF..8 REF. L2.58 BSC..2 BSC. L L Ɵ Recommended Land Pattern Rev.A 5
Symbol Parameter Rating Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V TC=25 C -22 A
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TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance
More information800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A. N-Channel MOSFET. General Description. Features. Pin Configuration TO-220 TO-220F
800V/4A N-Channel MOSFET 800V/4A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction
More informationP-Channel Enhancement Mode MOSFET
P-Channel Enhancement Mode MOSFET Description The is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density
More informationTPH3212PS. 650V Cascode GaN FET in TO-220 (source tab)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3212PS 650V, 72mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationAM2300. AiT Semiconductor Inc. APPLICATION ORDER INFORMATION PIN CONFIGURATION
DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. Advanced trench technology to provide excellent RDS(ON). FEATURES 20V/4.0A, RDS(ON)
More informationSPN166T04 N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
More informationCYStech Electronics Corp.
N- AND P-Channel Enhancement Mode MOSFET N-CH P-CH BVDSS 2V -2V Features Simple drive requirement Low gate charge Low on-resistance Fast switching speed Pb-free lead plating and halogen-free package Spec.
More informationSPN65T10. N-Channel Enhancement Mode MOSFET. DC/DC Converter Load Switch SMPS Secondary Side Synchronous Rectifier Power Tool Motor Control
DESCRIPTION The SPN65T10 is the N-Channel enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored
More informationSPN166T04 N-Channel Enhancement Mode MOSFET
DESCRIPTION The SPN166T04 is the N-Channel logic enhancement mode power field effect transistor which is produced using super high cell density DMOS trench technology. This high density process is especially
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 180. Qrr (nc) typ 54. * Dynamic R(on)
600V Cascode GaN FET in TO-220 (drain tab) Description The 600V, 150mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge, faster
More informationSSP20N60S / SSF20N60S 600V N-Channel MOSFET
SSP20N60S / SSF20N60S 600V N-Channel MOSFET Description SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and
More informationTPH3205WSB. 650V Cascode GaN FET in TO-247 (source tab)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationPin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1
General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and
More informationTO-220 G D S. T C = 25 C unless otherwise noted
500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state
More informationVDS (V) min 600 VTDS (V) max 750 RDS(on) (mω) max* 63. Qrr (nc) typ 136. * Dynamic R(on)
600V Cascode GaN FET in TO-247 (source tab) Not recommended for new designs see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer
More informationPIN CONFIGURATION(SOT-23-3L)
DESCRIPTION The SPP2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel
P-channel 20 V, 0.087 Ω typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDS RDS(on) max ID STT3P2UH7 20 V 0.1 Ω @ 4.5 3 A SOT23-6L Very low on-resistance
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code VDS RDS(on) max ID STR1P2UH7 20 V 0.1 Ω @ 4.5 1.4 A Very low on-resistance
More informationPin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1
General Description, N & P Pair enhancement mode MOSFET, uses Advanced Trench to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 130. Qrr (nc) typ 54. * Dynamic R(on)
650V Cascode GaN FET in TO-220 (source tab) Description The TPH3208PS 650V, 110mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 60. Qrr (nc) typ 136. Qg (nc) typ 28. * Dynamic RDS(on)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
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DESCRIPTION The is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to
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DESCRIPTION The SPP1433 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
More informationPFU70R360G / PFD70R360G
FEATURES New technology for high voltage device Low RDS(on) low conduction losses Small package Ultra low gate charge cause lower driving requirement 100% avalanche tested Halogen Free APPLICATION Power
More informationP-Channel Enhancement Mode MOSFET
DESCRIPTION The SPP2319W is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored
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