SMC2334SN. Single N-Channel MOSFET FEATURES VDS = 20V, ID = 5.7A DESCRIPTION PART NUMBER INFORMATION APPLICATIONS

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1 SMCSN Single N-Channel MOSFET DESCRIPTION SMC is the N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced trench technology devices are well suited for high efficiency fast switching applications, low in-line power loss are needed in small outline surface mount package. PART NUMBER INFORMATION SMC SN - TR G a b c d e a : Company name. b : Product Serial number. c : Package code SN: SOT- d : Handling code TR: Tape&Reel e : Green produce code G: RoHS Compliant FEATURES VDS = V, ID =.7A RDS(ON)=mΩ(Typ.)@VGS=.V RDS(ON)=mΩ(Typ.)@VGS=.V RDS(ON)=mΩ(Typ.)@VGS=.8V Fast switch.8v Low gate drive applications High power and current handlingcapability APPLICATIONS Hend-Held Instruments Load Switch D D G SOT- S G S ABSOLUTE MAXIMUM RATINGS (TA = C Unless otherwise noted ) Symbol Parameter Rating Units VDSS Drain-Source Voltage V VGSS Gate-Source Voltage ± V.7 A ID Continuous Drain Current TA=7 C.6 A IDM Pulsed Drain Current A A PD Power Dissipation B. W TA=7 C.8 W TJ Operation Junction Temperature -/ C TSTG Storage Temperature Range -/ C THERMAL RESISTANCE Symbol Parameter Typ Max Units RθJA Thermal Resistance Junction to Ambient B t s 9 Thermal Resistance Junction to Ambient BC Steady-State C/W SMCSN Rev.A

2 ELECTRICAL CHARACTERISTICS(TA = C Unless otherwise noted ) SMCSN Symbol Parameter Condition Min Typ Max Unit Static Parameters BVDSS Drain-Source Breakdown Voltage VGS=V, ID=μA V VGS(th) Gate Threshold Voltage VDS=VGS, ID=μA..7 V IGSS Gate Leakage Current VDS=V, VGS=±V ± na IDSS Zero Gate Voltage Drain Current VDS=V, VGS=V, TJ= C VDS=6V, VGS=V, TJ=7 C μa RDS(ON) Drain-source On-Resistance VGS=.V, ID=A VGS=.V, ID=.7A VGS=.8V, ID=A Gfs Forward Transconductance VDS=V, ID=A 6 S Diode Characteristics VSD Diode Forward Voltage IS=A, VGS=V.7 V IS Continuous Source Current.9 A Dynamic and Switching Parameters Qg Total Gate Charge 6 8. Qgs Gate-Source Charge VDS=V, VGS=.V, ID=.7A.78. Qgd Gate-Drain Charge.6. Ciss Input Capacitance 8 Coss Output Capacitance VDS=V,VGS=V, f=mhz 6 Crss Reverse Transfer Capacitance 6 td(on) Turn-On Time tr VDD=V, VGEN=.V,. 8 td(off) RG=Ω, ID=A 9 Turn-Off Time tf 6 Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. A. Pulsed width limited by maximum junction temperature, TJ(MAX)= C. B. The value of RθJA is measured with the device mounted on in FR- board in a still air environment with maximum junction temperature TJ(MAX)= C (initial temperature ). C. TJ(MAX)= C,using junction-to-case thermal resistance (RθJC) is more useful in additional heat sinking is used mω nc pf ns The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. SMCSN Rev.A

3 Normalized On Resistance Ptot-Power(W) VGS(V) Capacitance(pF) RDS(ON)(mΩ) SMCSN TYPICAL CHARACTERISTICS 6 VGS=,.,, V 6 VGS=V 8 VGS=.8V VGS=.V VGS=.V VGS=.V VGS=.8V 6 8 VDS-Drain Source Voltage(V) Output Characteristics Drain-Source On Resistance VDS=V ID=.7A 8 6 Ciss Coss 6 Crss Qg-Gate Charge(nC) Gate Charge VDS-Drain Source Voltage(V) Capacitance TJ-Junction Temperature( C) RDS(ON) vs Junction Temperature 7 TA-Junction Temperature( C) Power Dissipation SMCSN Rev.A

4 Normalized Transient Thermal Resistance Normalized On Resistance SMCSN TYPICAL CHARACTERISTICS TJ-Junction Temperature( C) RDS(ON) vs Junction Temperature 7 TJ-Case Temperature( C) Drain Current vs TJ µs ID (A). µs ms ms ms DC.. Duty= Single Pulse t t Duty Cycle, D=t/t... VDS Voltage (V) Maximum Safe Operation Area..... Square Wave Pulse Duration(Sec) Thermal Transient Impedance VGS Ton Toff V Qg VDS Td(on) Tr Td(off) Tf Qgs Qgd 9% % Charge VGS Gate Chrge Waveform Switching Time Waveform SMCSN Rev.A

5 SMCSN SOT- PACKAGE DIMENSIONS.8mm.8mm.mm.9mm Recommended Land Pattern Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A.9... A.... A.9... b.... c D E...7. E e.9 TYP..7 TYP e L. REF.. REF. L.... θ 8 8 SMCSN Rev.A