800V/4A N-Channel MOSFET MSK4N80T/F 800V/4A. N-Channel MOSFET. General Description. Features. Pin Configuration TO-220 TO-220F
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1 800V/4A N-Channel MOSFET 800V/4A N-Channel MOSFET General Description Fast switching time Low on resistance, low gate charge Excellent avalanche characteristics Suitable for active power factor correction Suitable for switching mode power supplies TO-220 Features VDSS=800V, ID=4A; Low Drain-Source ON Resistance: RDS(ON) =3.6 VGS=10V Qg(typ.)=25nC RoHS Compliant Pin Configuration TO-220F 1: Gate 2: Drain 3: Source TO-220 1: Gate 2: Drain 3: Source TO-220F TAITRON COMPONENTS INCORPORATED Tel: (800)-TAITRON (800) (661) Fax: (800)-TAITFAX (800) (661) Page 1 of 12
2 Absolute Maximum Ratings (TC=25ºC unless otherwise specified, Note) Symbol Description MSK4N80T MSK4N80F Unit VDSS Drain-Source Voltage 800 V VGSS Gate-Source Voltage ± 30 V ID Drain Tc=25ºC (note 1) 4.0 IDP Drain Current - Pulsed (note 2) 16 EAS Single Pulsed Avalanche Energy (note 3) 460 mj EAR Repetitive Avalanche Energy (note 2) 13 mj dv/dt Peak Diode Recovery dv/dt (note 4) 4.0 V/nS PD RθJC RθJA Power Dissipation Thermal Resistance (Junction-to-Case) Thermal Resistance (Junction-to-Ambient) Tc=25ºC W Derate above 25ºC W/ C C/ W 62.5 C/ W TJ Junction Temperature +150 C TSTG Storage Temperature Range -55 to +150 C Note: 1. Drain current limited by maximum junction temperature. 2. Repetitive rating: Pulse width limited by junction temperature. 3. L=54mH, IS=4A, VDD=50V, RG=25Ω, Starting Tj=25 C. 4. IS 4A, di/dt 200A/µS, VDD BVDSS, Starting Tj=25 C. A Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Off Characteristics Symbol Description Min. Typ. Max. Unit Conditions V(BR)DSS Drain-Source Breakdown Voltage V VGS=0V, ID=250µA ΔV(BR)DSS/ΔTj Breakdown Voltage Temperature Coefficient V/ C ID=250µA, Referenced to 25ºC IDSS Zero Gate Voltage Drain Current ua VDS=800V, VGS=0V IGSS Gate-Source Leakage Current - - ±100 na VGS=±30V, VDS=0V Page 2 of 12
3 On Characteristics Symbol Description Min. Typ. Max. Unit Conditions VGS(th) Gate Threshold Voltage V VDS=VGS, ID=250μA RDS(ON) Drain-Source ON Resistance Ω VGS=10V, ID=2A gfs Forward Transconductance S VDS=50V, ID=2 A Dynamic Characteristics Symbol Description Min. Typ. Max. Unit Conditions Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance pf VDS=25V, VGS=0V, f=1mhz Switching Characteristics Symbol Description Min. Typ. Max. Unit Conditions td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge ns nc VDD=400V, RG=25Ω, ID=4A (note 5,6) VDS=640V, ID=4A, VGS=10V (note 5,6) Drain-Source Diode Characteristics and Maximum Ratings Symbol Description Min. Typ. Max. Unit Conditions Is Isp Vsd Continuous Source-Drain Diode Current Pulsed Source-Drain Diode Current Source-Drain Diode Forward Voltage A VGS< VGS(th) V IS=4A, VGS=0V trr Reverse Recovery Time ns Qrr Reverse Recovered Charge uc IS=4A,VGS=0V dis//dt=100a/us Note: 5. Pulse test: Pulse width 300us, Duty cycle 2%. Page 3 of 12
4 6. Essentially independent of operating temperature. Typical Characteristics Curves Fig.1- ID vs. VDS Fig.2- ID vs. VGS Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V) Fig.3-BVDSS vs. TJ Fig.4- IS vs. VSD Normalized Breakdown Voltage BVDSS Reverse Drain Current IS (A) Drain Current ID (A) Drain Current ID (A) Junction Temperature TJ ( C) Source-Drain Voltage VSD (V) Page 4 of 12
5 Fig.5- RDS(ON) vs. TJ Fig.6- RDS(ON) vs. ID Junction Temperature TJ ( C) Drain Current ID (A) Fig.7- ID vs. TJ Fig.8- Qg vs. VGS Drain Current ID (A) Gate-Source Voltage VGS (V) Normalized ON Resistance RDS(ON) Normalized ON Resistance RDS(ON) (Ω) Junction Temperature TJ ( C) Gate-Charge Qg (nc) Page 5 of 12
6 Fig.9- C vs. VDS Fig.10- Safe Operation Area (MSK4N80T) Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Fig.11- Safe Operation Area (MSK4N80F) Drain Current ID (A) Capacitance (pf) Drain Current ID (A) Drain-Source Voltage VDS (V) Page 6 of 12
7 Fig.12- Transient Thermal Response Curve MSK4N80T Square Wave pulse Duration t1 (S) Fig.13- Transient Thermal Response Curve MSK4N80F Normalized Transient Thermal Resistance Normalized Transient Thermal Resistance Square Wave pulse Duration t1 (S) Page 7 of 12
8 Test Circuit and Waveform Fig.14-Gate Charge Fig.15- Single Pulsed Avalanche Energy Page 8 of 12
9 Fig.16-Resistive Load Switching Fig.17-Source - Drain Diode Reverse Recovery and dv /dt Page 9 of 12
10 Dimensions in mm MSK4N80T TO Page 10 of 12
11 MSK4N80F TO-220F Page 11 of 12
12 How to contact us: US HEADQUARTERS WEST HARRISON PARKWAY, VALENCIA, CA Tel: (800) TAITRON (800) (661) Fax: (800) TAITFAX (800) (661) TAITRON COMPONENTS MEXICO, S.A.DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P MEXICO Tel: Fax: TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP BRAZIL Tel: Fax: TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN AN ROAD, SUITE 1503, SHANGHAI, , CHINA Tel: Fax: Page 12 of 12
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More informationVDS (V) min 650 VTDS (V) max 800 RDS(on) (mω) max* 60. Qrr (nc) typ 136. Qg (nc) typ 28. * Dynamic RDS(on)
650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 49mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
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900V GaN FET in TO-220 (source tab) Description The TP90H180PS 900V, 170mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon
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650V Cascode GaN FET in TO-247 (source tab) Description The TPH3205WSB 650V, 52mΩ gallium nitride (GaN) FET is a normally-off device. Transphorm GaN FETs offer better efficiency through lower gate charge,
More informationn Low RDS(on) n Avalanche Energy Ratings n Simple Drive Requirements n Ease of Paralleling n Hermetically Sealed n Surface Mount n Light Weight
PD - 9472 HEXFET POWER MOSFET SURFACE MOUNT (SMD-.5) IRL7NJ382 2V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRL7NJ382 2V.85 22A* Seventh Generation HEXFET power MOSFETs from International
More informationPin Define Pin Symbol Description 1 S1 Source 1 2 G1 Gate 1 3 S2 Source 2 4 G2 Gate 2 5 D2 Drain 2 6 D2 Drain 2 7 D1 Drain 1 8 D1 Drain 1
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