PDN001N60S. 600V N-Channel MOSFETs BVDSS RDSON ID 600V A S G. General Description. Features. SOT23-3S Pin Configuration.
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1 General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply BVDSS RDSON ID 600V A Features Improved dv/dt capability Fast switching Green Device Available SOT23-3S Pin Configuration D S G G D S Applications High efficient switched mode power supplies TV Power Adapter/charger LED Lighting Absolute Maximum Ratings Tc=25 unless otherwise noted Symbol Parameter Rating Units VDS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current Continuous (TC=25 ) 0.1 A Drain Current Continuous (TC=100 ) 0.06 A IDM Drain Current Pulsed A PD Power Dissipation (TC=25 ) 1.56 W Power Dissipation Derate above W/ TSTG Storage Temperature Range -55 to 150 TJ Operating Junction Temperature Range -55 to 150 Thermal Characteristics Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W 1
2 Electrical Characteristics (T J =25, unless otherwise noted) Off Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA V BVDSS/ TJ BVDSS Temperature Coefficient Reference to 25, ID=1mA V/ IDSS VDS=600V, VGS=0V, TJ= ua Drain-Source Leakage Current VDS=480V, VGS=0V, TJ= ua IGSS Gate-Source Leakage Current VGS=±20V, VDS=0V ±100 na On Characteristics RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.5A VGS(th) Gate Threshold Voltage V VGS=VDS, ID =250uA VGS(th) VGS(th) Temperature Coefficient mv/ gfs Forward Transconductance VDS=10V, ID=0.07A S Dynamic and switching Characteristics Qg Total Gate Charge 2, Qgs Gate-Source Charge 2,3 VDS=480V, VGS=10V, ID=0.1A Qgd Gate-Drain Charge 2, Td(on) Turn-On Delay Time 2, Tr Rise Time 2,3 VDD=300V, VGS=10V, RG= Td(off) Turn-Off Delay Time 2,3 ID=0.05A Tf Fall Time 2, Ciss Input Capacitance Coss Output Capacitance VDS=25V, VGS=0V, F=1MHz Crss Reverse Transfer Capacitance nc ns pf Drain-Source Diode Characteristics and Maximum Ratings Symbol Parameter Conditions Min. Typ. Max. Unit IS Continuous Source Current A VG=VD=0V, Force Current ISM Pulsed Source Current A VSD Diode Forward Voltage VGS=0V, IS=0.1A, TJ= V Note : 1. Repetitive Rating : Pulsed width limited by maximum junction temperature. 2. The data tested by pulsed, pulse width 300us, duty cycle 2%. 3. Essentially independent of operating temperature. 2
3 Normalized On Resistance ( ) T C, Case Temperature ( ) T J, Junction Temperature ( ) Fig.2 Normalized RDSON vs. T J VGS, Gate to Source Voltage (V) ID, Continuous Drain Current (A) Normalized Gate Threshold Voltage (V) Fig.1 Continuous Drain Current vs. T C T J, Junction Temperature ( ) Fig.3 Normalized V th vs. T J Qg, Gate Charge (nc) Fig.4 Gate Charge Waveform Normalized Thermal Response (RθJC) ID, Continuous Drain Current (A) Square Wave Pulse Duration (s) Fig.5 Normalized Transient Impedance V DS, Drain to Source Voltage (V) Fig.6 Maximum Safe Operation Area 3
4 V DS 90% EAS= 1 2 L x I AS 2 x BV DSS BV DSS -V DD BV DSS V DD 10% I AS V GS T d(on) T r T d(off) T f T on T off V GS Fig.7 Switching Time Waveform Fig.8 EAS Waveform 4
5 Dimensions In Millimeters Dimensions In Inches Symbol Min Max Min Max A A b c D E E e TYP TYP. e L REF REF. L θ
Features. Symbol Parameter Typ. Max. Unit RθJA Thermal Resistance Junction to ambient /W RθJC Thermal Resistance Junction to Case
General Description These N-Channel enhancement mode power field effect transistors are planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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