TO-252 Pin Configuration

Transcription

1 WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The WSF46 meet the RoHS and Green Product requirement, % EAS guaranteed with full function reliability approved. Features Advanced high cell density Trench technology Super Low Gate Charge Excellent CdV/dt effect decline % EAS Guaranteed Green Device Available Product Summery BVDSS RDSON ID 4V 7.2mΩ 6A Applications High Frequency Point-of-Load Synchronous Buck Converter Networking DC-DC Power System Power Tool Application TO-252 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units V DS Drain-Source Voltage 4 V Gate-Source Voltage ±2 V I C =25 Continuous Drain V 6 A I C = Continuous Drain V 48 A I DM Pulsed Drain Current a 6 A EAS Single Pulse Avalanche Energy b mj I AS Avalanche Current 6 A P a =25 Total Power Dissipation 3. W T STG Storage Temperature Range -55 to 5 T J Operating Junction Temperature Range -55 to 5 Thermal Data Notes: Symbol Parameter Typ. Max. Unit R θja Thermal Resistance Junction-Ambient /W R θjc Thermal Resistance Junction-Case /W * Avalanche single pulse test and avalanche period time tav μs, duty<%. ** Avalanche test condition: T J =25 C, L=.5mH, I AS =2A, V DD =3V, and =V. *** Current limited by bond wire. Page Dec.24

2 WSF46 Electrical Characteristics (T J =25, unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BV DSS Drain-Source Breakdown Voltage =V, I D =25uA V BV DSS / T J BV DSS Temperature Coefficient Reference to 25, I D =ma V/ R DS(ON) Static Drain-Source On-Resistance 2 VGS=V, I D =2A mω R DS(ON) Static Drain-Source On-Resistance 2 VGS=4.5V, I D =A mω (th) Gate Threshold Voltage =V DS, I D =25uA V (th) Temperature Coefficient mv/ (th) S Drain-Source Leakage Current V DS =32V, =V, T J = V DS =32V, =V, T J = I GSS Gate-Source Leakage Current =±2V, V DS =V ± na gfs Forward Transconductance V DS =5V, I D =2A S R g Gate Resistance V DS =V, =V, f=mhz Ω Q g Total Gate Charge (V) Q gs Gate-Source Charge V DS =2V, =V, I D =4A Q gd Gate-Drain Charge T d(on) Turn-On Delay Time T r Rise Time V DD =3V, V GEN =V, R G =Ω, T d(off) Turn-Off Delay Time I D =A,RL=5Ω T f Fall Time C iss Input Capacitance C oss Output Capacitance V DS =2V, =V, f=mhz C rss Reverse Transfer Capacitance ua nc ns pf Diode Characteristics Symbol Parameter Conditions Min. Typ. Max. Unit I S Continuous Source Current,6 V G =V D =V, Force Current A I SM Pulsed Source Current 2, A V SD Diode Forward Voltage 2 =V, I S =2A, T J = V Note :.The data tested by surface mounted on a inch 2 FR-4 board with 2OZ copper,t<sec. 2.The data tested by pulsed, pulse width 3us, duty cycle 2% 3.The EAS data shows Max. rating. The test condition is V DD =25V, =V,L=.5mH,I AS =2A 4.The power dissipation is limited by 5 junction temperature 5.The Min. value is % EAS tested guarantee. 6.The data is theoretically the same as I D and I DM, in real applications, should be limited by total power dissipation. 7.Package limitation current is 6A. Page 2 Dec.24

3 WSF46 Typical Characteristics Power Dissipation Drain Current ower (W) Ptot - P Current (A) ID - Drain T C =25 o C T C =25 o C,V G =V Tj - Junction Te mperature ( C) Tj - Junction Temperature ( C) Safe Operation Area Thermal Transient Impedance ID - Drain Current (A) 5 Rds(on) Limit 3us ms ms ms s DC T C =25 O C... 3 VDS - Drain - Source Voltage (V) ent Thermal Resistance Normalized Transi Single Pulse..2 Duty =.5 Mounted on in 2 pad R θja :5 o C/W E-3 E-4 E-3.. Square Wave Pul se Duration (sec) Page 3 Dec.24

4 WSF46 Typical Characteristics Output Characteristics Drain-Source On Resistance ID - Drain Current (A) =4.5,5,6,7,8,9,V 4V 3.5V RDS(ON) - On - Resistance (mω) =4.5V =V 3V VDS - Drain - Source Voltage (V) ID - Drain Current (A) Gate-Source On Resistance Gate Threshold Voltage 3 =2A.6 =25µA RDS(ON) - On - Resistance (mω) hreshold Voltage Normalized T VGS - Gate - Source Voltage (V) Tj - Junction Te mperature ( C) Page 4 Dec.24

5 WSF46 Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward 2..8 = V = 2A d On Resistance Normalize IS - Source Current (A) T j =5 o C T j =25 o C.4 R j =25 o C: 6.2mΩ Tj - Junction Temperature ( C) VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) Crss Coss Frequency=MHz Ciss VGS - Gate - source Voltage (V) V DS = 5V = 4A VDS - Drain - Source Voltage (V) QG - Gate Charge (nc) Page 5 Dec.24

6 WSF46 Package Information TO E b3 A c2 E L4 D L3 H D b e c SEE VIEW A GAUGE PLANE L SEATING PLANE.25 VIEW A A S TO Y M B MILLIMETERS INCHES O L MIN. MAX. MIN. MAX. A A b3 c c2 D D E.3 b.5.89 E e H L L BSC L4 -.2 Note : Follow JEDEC TO BSC RECOMMENDED LAND PATTERN 6.25 MIN. 6.8 MIN MIN MIN UNIT: mm Page 6 Dec.24

7 Attention, Any and all Winsok power products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your Winsok power representative nearest you before using any Winsok power products described or contained herein in such applications. 2,Winsok power assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all Winsok power products described or contained herein. 3, Specifications of any and all Winsok power products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer s products or equipment. 4, Winsok power Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 5,In the event that any or all Winsok power products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. 6, No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of Winsok power Semiconductor CO., LTD. 7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Winsok power believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. 8, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the Winsok power product that you Intend to use. 9, this catalog provides information as of Sep.24. Specifications and information herein are subject to change without notice.