SX3439K. Main Product Characteristics I D. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)

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switching and reverse body recovery Description The SX3439K utilizes the latest techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating.

1 Main Product Characteristics V (BR)DSS 20V -20V 380mΩ@ 4.5V 520mΩ@-4.5V R DS(on) 450mΩ@2.5V 700mΩ@-2.5V 800mΩ@1.8V 950mΩ(TYP)@-1.8V 0.75A -0.66A SOT-563 Schematic Diagram Features and Benefits Advanced MOSFET process technology Ideal for load switching, logic level shift and battery management Low on-resistance with low gate charge Fast switching and reverse body recovery Description The SX3439K utilizes the latest techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (T A =25 C unless otherwise specified) Parameter Symbol Value Unit N-Ch MOSFET Drain-Source Voltage V DS 20 V Gate-Source Voltage ±12 V Continuous Drain Current A Drain Current (tp= 10us) M 1.8 A P-Ch MOSFET Drain-Source Voltage V DS -20 V Gate-Source Voltage ±12 V Continuous Drain Current A Drain Current (tp=10us) M -1.2 A Temperature and Thermal Resistance Thermal Resistance from Junction to Ambient 1 R θja 833 C/W Junction Temperature T J -55 to +150 C Storage Temperature T STG -55 to +150 C Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T L 260 C 1/4

2 N-Ch MOSFET Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA V Zero Gate Voltage Drain Current IDSS VDS =20V,VGS = 0V µa Gate-Body Leakage Current IGSS VGS =±10V, VDS = 0V ±20 ua Gate Threshold Voltage 2 VGS(th) VDS =, ID =250µA V RDS(on) td(on) SX3439K N-Channel Electrical Characteristics (T A =25 C unless otherwise specified) Drain-Source On-Resistance 2 VGS =4.5V, ID =0.65A mω VGS =2.5V, ID =0.55A mω VGS =1.8V, ID =0.45A mω Forward Tranconductance 2 gfs VDS =10V, ID =0.8A S Diode Forward Voltage V SD I S =0.15A, VGS = 0V V Dynamic Characteristics 4 Input Capacitance C iss pf Output Capacitance C oss VDS =16V,VGS =0V,f =1MHz pf Reverse Transfer Capacitance C rss pf Switching Characteristics 3,4 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time ns tr =4.5V,V DS =10V, ns td(off) =ma,r GEN =10Ω ns Turn-Off Fall Time tf ns 2/4

3 Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=μs, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperature. SX3439K P-Channel Electrical Characteristics (T A =25 C unless otherwise specified) P-Ch MOSFET Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250µA V Zero Gate Voltage Drain Current IDSS VDS =-20V,VGS = 0V µa Gate-Body Leakage Current IGSS VGS =±10V, VDS = 0V ±20 ua Gate Threshold Voltage 2 (th) VDS =, ID =-250µA V Drain-Source On-Resistance 2 RDS(on) VGS =-4.5V, ID =-1A mω VGS =-2.5V, ID =-0.8A mω VGS =-1.8V, ID =-0.5A mω Forward Tranconductance 2 gfs VDS =-10V, ID =-0.54A S Diode Forward Voltage VSD IS= -0.5A, VGS = 0V V Dynamic Characteristics Input Capacitance C iss pf Output Capacitance C oss VDS =-16V,VGS =0V,f =1MHz pf Reverse Transfer Capacitance C rss pf Switching Characteristics 3 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) ns tr =-4.5V,V DS =-10V, ns td(off) =-200mA,R GEN =10Ω ns tf ns 3/4

4 N-Channel Typical Electrical and Thermal Characteristic Curves Output Characteristics =4V,5V =3V V DS =3V Transfer C haracteristics =2.5V =2V =1.5V DRAIN TO SOURCE VOLTAGE V DS GATE TO SOURCE VOLTAGE =1.8V =2.5V =4.5V =0.65A I S V SD GATE TO SOURCE VOLTAGE 0.8 Threshold Voltage SOURCE CURRENT I S 0.1 THRESHOLD VOLTAGE V TH =250uA SOURCE TO DRAIN VOLTAGE SD JUNCTION TEMPERATURE T j ( )

5 P-Channel Typical Electrical and Thermal Characteristic Curves Output Characteristics =-4V,-5V =-3V V DS =-3V Transfer C haracteristics =-2.5V =-2V =-1.5V DRAIN TO SOURCE VOLTAGE V DS GATE TO SOURCE VOLTAGE =-1.8V =-2.5V =-4.5V =-1A GATE TO SOURCE VOLTAGE I S V SD Threshold Voltage SOURCE CURRENT I S -0.1 THRESHOLD VOLTAGE V TH =-250uA SOURCE TO DRAIN VOLTAGE SD JUNCTION TEMPERATURE T J ( )

6 Package Outline Dimensions SOT-563 Suggested Pad Layout Order Information Device Package Marking Carrier Quantity HSF Status SX3439K SOT K Tape & Reel 0pcs/Reel RoHS compliant 4/4 Doc.USX3439KxSC4.0

SSFT04N15. Main Product Characteristics V DSS 150V. 130mΩ (typ.) I D. Features and Benefits. Description

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