Pin Description. Features. Ordering and Marking Information. Dual Enhancement Mode MOSFET (N- and P-Channel) N-Channel 20V/8A, R DS(ON)
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1 Dual Enhancement Mode MOSFET (N- and ) Features Pin Description V/8A, R DS(ON) =.5V R DS(ON) =.5V -V/-.3A, R DS(ON) =-.5V R DS(ON) =-.5V Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Applications () G S G S G Top View of SOP 8 (8) (7) D D D D D D () G (6) (5) D D Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S () S (3) Ordering and Marking Information APM5A Assembly Material Handling Code Temp. Range Package Code Package Code K : SOP-8 Operating Junction Temp. Range C : -55 to 5 C Handling Code TR : Tape & Reel Assembly Material L : Lead Free Device G : Halogen and Lead Free Device APM5A K : Note: ANPEC lead-free products contain molding compounds/die attach materials and % matte tin plate termination finish; which are fully compliant with RoHS. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J-STD-C for MSL classification at lead-free peak reflow temperature. ANPEC defines Green to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 9ppm by weight in homogeneous material and total of Br and Cl does not exceed 5ppm by weight). APM5A XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders.
2 Absolute Maximum Ratings (T A = 5 C unless otherwise noted) Symbol Parameter N Channel P Channel Unit V DSS Drain-Source Voltage - S Gate-Source Voltage ± ± V I D * Continuous Drain Current =V(N) I DM * Pulsed Drain Current =-V(P) 3-6 A I S * Diode Continuous Forward Current.5 - A T J Maximum Junction Temperature 5 T STG Storage Temperature Range -55 to 5 C P D * Power Dissipation T A =5 C T A = C.8 W R θja * Thermal Resistance-Junction to Ambient 6.5 C/W Note: *Surface Mounted on in pad area, t sec. Electrical Characteristics (T A = 5 C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BV DSS I DSS I DSS Min. Typ. Max. Drain-Source Breakdown =V, I DS =5µA N-Ch - - Voltage =V, I DS =-5µA P-Ch Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current (th) Gate Threshold Voltage I GSS Gate Leakage Current =±V, V DS =V R DS(ON) a Drain-Source On-State Resistance V DS =6V, =V - - N-Ch T J =85 C V DS =-6V, =V P-Ch T J =85 C V DS =, I DS =5µA N-Ch.5.7 V DS =, I DS =-5µA P-Ch N-Ch - - ± P-Ch - - ± =.5V, I DS =8A N-Ch - 6 =-.5V, I DS =-.3A P-Ch =.5V, I DS =5.A N-Ch =-.5V, I DS =-A P-Ch Unit V µa V µa mω
3 Electrical Characteristics (Cont.) (T A = 5 C unless otherwise noted) Symbol Parameter Test Conditions Diode Characteristics V SD a t rr q rr Diode Forward Voltage Reverse Recovery Time Min. Typ. Max. I SD =.5A, =V N-Ch I SD =-A, =V P-Ch I SD =-8A, dl SD /dt =A/µs N-Ch P-Ch - - N-Ch Reverse Recovery Charge I SD =-.3A, dl SD /dt =A/µs P-Ch Unit V ns nc Dynamic Characteristics b N-Ch - - R G Gate Resistance =V,V DS =V,F=MHz P-Ch C iss C oss C rss t d(on) t r t d(off) t f Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time =V, V DS =V, Frequency=.MHz N-Ch P-Ch N-Ch P-Ch =V, N-Ch V DS =-V, Frequency=.MHz P-Ch V DD =V, R L =Ω, I DS =A, V GEN =.5V, R G =6Ω V DD =-V, R L =Ω, I DS =-A, V GEN =-.5V, R G =6Ω N-Ch - 5 P-Ch - 6 N-Ch - P-Ch - 3 N-Ch - 73 P-Ch N-Ch - 3 P-Ch Ω pf ns N-Ch - 3 Q g Total Gate Charge V DS =V, =.5V, Gate Charge Characteristics b I DS =8A Q gs Gate-Source Charge Q gd Gate-Drain Charge V DS =-V, =-.5V, I DS =-.3A Notes: a : Pulse test ; pulse width 3µs, duty cycle %. b : Guaranteed by design, not subject to production testing. P-Ch N-Ch - - P-Ch - - N-Ch - - P-Ch -. - nc 3
4 Typical Characteristics Power Dissipation Drain Current.5. 8 Ptot - Power (W).5. ID - Drain Current (A) 6.5 T A =5 o C T A =5 o C,V G =.5V Safe Operation Area Thermal Transient Impedance ID - Drain Current (A). Rds(on) Limit 3µs ms ms ms s DC T A =5 O C... Normalized Transient Thermal Resistance Single Pulse. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E- E VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec)
5 Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance ID - Drain Current (A) = 3,, 5, 6, 7, 8, 9, V.5V V.5V RDS(ON) - On - Resistance (mω) =.5V =.5V VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage I D =8A.6 I DS =5µA RDS(ON) - On - Resistance (mω) Normalized Threshold Voltage VGS - Gate - Source Voltage (V)
6 Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance =.5V I DS = 8A IS - Source Current (A) 3 T j =5 o C T j =5 o C.5 R j =5 o C: mω VSD - Source - Drain Voltage (V) C - Capacitance (pf) Crss Capacitance Coss Frequency=MHz Ciss 8 6 VDS - Drain - Source Voltage (V) VGS - Gate - source Voltage (V) V DS =V I DS =8A Gate Charge 8 6 QG - Gate Charge (nc) 6
7 Typical Characteristics (Cont.) Power Dissipation Drain Current.5 5. Ptot - Power (W).5. -ID - Drain Current (A) 3.5 T A =5 o C T A =5 o C,V G =-.5V Safe Operation Area Thermal Transient Impedance -ID - Drain Current (A). Rds(on) Limit ms ms ms s DC T A =5 O C... Normalized Transient Thermal Resistance Single Pulse.. Duty =.5 Mounted on in pad R θja : 6.5 o C/W E-3 E- E VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) 7
8 Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance -ID - Drain Current (A) = -,-5,-6,-7-8,-9,-V -3V -V -.5V RDS(ON) - On - Resistance (mω) = -.5V = -.5V VDS - Drain - Source Voltage (V) 8 6 -ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 6 I D = -.3A.6 I DS = -5µA. RDS(ON) - On - Resistance (mω) 8 6 Normalized Threshold Voltage VGS - Gate - Source Voltage (V) 8
9 Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward..8 = -.5V I DS = -.3A Normalized On Resistance IS - Source Current (A) T j =5 o C T j =5 o C. R j =5 o C: 8mΩ VSD - Source - Drain Voltage (V) Capacitance Gate Charge C - Capacitance (pf) Crss Frequency=MHz Ciss Coss -VGS - Gate - source Voltage (V) V DS = -V I DS = -.3A 8 6 -VDS - Drain - Source Voltage (V) 6 8 QG - Gate Charge (nc) 9
10 Package Information SOP-8 D SEE VIEW A E E h X 5 e b c A A A VIEW A L.5 GAUGE PLANE SEATING PLANE S Y M SOP-8 B O L MIN. MAX. MIN. A.75 A..5. MAX..69. A.5.9 b c D E E e.7 BSC.5 BSC h L MILLIMETERS INCHES Note:. Follow JEDEC MS- AA.. Dimension D does not include mold flash, protrusions or gate burrs. Mold flash, protrusion or gate burrs shall not exceed 6 mil per side. 3. Dimension E does not include inter-lead flash or protrusions. Inter-lead flash and protrusions shall not exceed mil per side.
11 Carrier Tape & Reel Dimensions OD P P P A H A E OD B A T B W F K B A SECTION A-A SECTION B-B d T Application A H T C d D W E F SOP MIN MIN.. MIN P P P D D T A B K MIN (mm) Devices Per Unit Package Type Unit Quantity SOP-8 Tape & Reel 5
12 Reflow Condition (IR/Convection or VPR Reflow) T P Ramp-up tp Critical Zone T L to T P Temperature T L Tsmax Tsmin ts Preheat t L Ramp-down 5 t 5 C to Peak Time Reliability Test Program Test item Method Description SOLDERABILITY MIL-STD-883D-3 5 C, 5 sec HOLT MIL-STD-883D-5.7 Hrs C PCT JESD--B, A 68 Hrs, %RH, C TST MIL-STD-883D C~5 C, Cycles Classification Reflow Profiles Profile Feature Sn-Pb Eutectic Assembly Pb-Free Assembly Average ramp-up rate (T L to T P ) 3 C/second max. 3 C/second max. Preheat C 5 C - Temperature Min (Tsmin) - Temperature Max (Tsmax) 5 C C 6- seconds 6-8 seconds - Time (min to max) (ts) Time maintained above: - Temperature (T L ) - Time (t L ) 83 C 6-5 seconds 7 C 6-5 seconds Peak/Classification Temperature (Tp) See table See table Time within 5 C of actual Peak Temperature (tp) -3 seconds - seconds Ramp-down Rate 6 C/second max. 6 C/second max. Time 5 C to Peak Temperature 6 minutes max. 8 minutes max. Notes: All temperatures refer to topside of the package. Measured on the body surface.
13 Classification Reflow Profiles (Cont.) Table. SnPb Eutectic Process Package Peak Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm 3 35 <.5 mm +/-5 C 5 +/-5 C.5 mm 5 +/-5 C 5 +/-5 C Table. Pb-free Process Package Classification Reflow Temperatures Package Thickness Volume mm 3 <35 Volume mm Volume mm 3 > <.6 mm 6 + C* 6 + C* 6 + C*.6 mm.5 mm 6 + C* 5 + C* 5 + C*.5 mm 5 + C* 5 + C* 5 + C* *Tolerance: The device manufacturer/supplier shall assure process compatibility up to and including the stated classification temperature (this means Peak reflow temperature + C. For example 6 C+ C) at the rated MSL level. Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : Fax : Taipei Branch : F, No., Lane 8, Sec Jhongsing Rd., Sindain City, Taipei County 36, Taiwan Tel : Fax :
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N-Channel Enhancement Mode MOSFET Features Pin Description 15V/35A, R DS(ON) = 38mW(max.) @ V GS = V % UIS + R g Tested Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) G DS Top
More informationSymbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS
Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (T C=25 C Unless Otherwise Noted) V DSS Drain-Source Voltage 3 V GSS Gate-Source Voltage ±2 T J Maximum Junction Temperature 75 C T
More informationG : Halogen and Lead Free Device SM 3403 XXXXX - Lot Code XXXXX
P-Channel Enhancement Mode MOSFET Features -2V/-95A, = 3.6mΩ(max.) @ =-1V = 4.6mΩ(max.) @ =-4.5V = 7mΩ(max.) @ =-2.5V = 1mΩ(max.) @ =-1.8V HBM ESD protection level of 2.3KV typical 1% UIS + R g Tested
More informationHandling Code Temperature Range Package Code
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, R DS(ON) =.5mW (max.) @ V GS =V R DS(ON) =14.5mW (max.) @ V GS =4.5V 0% UIS + R g Tested D G S Reliable and Rugged Lead Free and Green
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/60A, R DS(ON) =5.7mW V GS. =10V =9mW (Max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/6A, R DS(ON) =5.7mW (Max.) @ V GS =V R DS(ON) =9mW (Max.) @ V GS =4.5V % UIS + R g Tested D G S Reliable and Rugged Lead Free and Green Devices
More informationSM2408NSAN. Applications. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET
N-Channel Enhancement Mode MOSFET Features Pin Description 30V/4.8A R DS(ON) =31.2mΩ(max.)@V GS =10V R DS(ON) =54.6mΩ(max.)@V GS =4.5V D S Reliable and Rugged Lead Free and Green Devices Available (RoHS
More informationSM4377NSKP. Features. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/50A, R DS(ON) =10V = 9.6mW (max.
N-Channel Enhancement Mode MOSFET Features Pin Description 3V/5A, R DS(ON) = 7mW (max.) @ V GS =V R DS(ON) = 9.6mW (max.) @ V GS =4.5V Provide Excellent Qgd x Rds-on % UIS + R g Tested Reliable and Rugged
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -60V/-15A, R DS(ON) =-10V
P-Channel Enhancement Mode MOSFET Features -6V/-15, R DS(ON) =93mΩ(max.) @ V GS =-1V R DS(ON) =128mΩ(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) 1% UIS
More informationS1 / D2 (3)(4) (2)(5)(6)(7)
Dual N-Channel Enhancement Mode MOSFET Features Channel 3V/24A, R DS(ON) = 3.9mW (max.) @ = V R DS(ON) = 6.5mW (max.) @ = 4.5V Channel 2 3V/44A, R DS(ON) =.2mW (max.) @ =V R DS(ON) = 2mW (max.) @ =4.5V
More informationFeatures. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-68A, R DS(ON) =-10V = V GS. = 9mW(max.
P-Channel Enhancement Mode MOSFET Features -3V/-68, R DS(ON) = 9mW(max.) @ V GS =-V R DS(ON) = 5mW(max.) @ V GS =-4.5V Reliable and Rugged Lead Free and Green Devices vailable (RoHS Compliant) HBM ESD
More informationHandling Code Temperature Range. TU : Tube. Assembly Material
N-Channel Enhancement Mode MOSFET Features Pin Description 650V/20A, R DS(ON) = 0.8W(max.) @ V GS = V V @Tj, max=750v (typ.) DS Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available
More informationV OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
More informationFeatures. Ordering and Marking Information. Dual N-Channel Enhancement Mode MOSFET 20V/9A, R DS(ON) = V GS = 4.5V = 4V = 3.
ual N-Channel Enhancement Mode MOSFET Features 2V/9, = 9.5mW(max.) @ = 4.5V = mw(max.) @ = 4V =.5mW(max.) @ = 3.7V = 11.5mW(max.) @ = 3.1V = 13mW(max.) @ = 2.5V Reliable and Rugged ES Protected Lead Free
More informationOUT2 1 IN- Package Code X : MSOP - 8. Temperature Range. I : -40 to 105 C Handling Code TR : Tape & Reel. Handling Code.
Single-Phase Full-Wave Motor Driver for Silent Fan Motor Features Single Phase Full Wave Fan Driver Silent Driver Low Supply Current Built-in Lock Protection and Auto Restart Function (External Capacitor
More informationGeneral Description. Features. Applications. Pin Configuration. 1A Low Dropout, Fast Response Fixed Voltage Regulator APL1565A. Front View for SOP-8
1A Low Dropout, Fast Response Fixed Voltage Regulator Features General Description Guaranteed Output Voltage Accuracy within 2% Fast Transient Response Load Regulation : 1mV Typ. Line Regulation : 4mV
More informationFeatures. Ordering and Marking Information. N-Channel Enhancement Mode MOSFET 30V/7.4A, R DS(ON)
SM268NSC N-Channel Enhancement Mode MOSFET Features Pin escription 3V/7.4, R S(ON) = 7mΩ(max.) @ V GS =V R S(ON) = 2.5mΩ(max.) @ V GS =4.5V Reliable and Rugged Lead Free and Green evices vailable (RoHS
More informationP-Channel Enhancement Mode MOSFET
Features -20V/-3A, R DS(ON) =72mΩ(typ.) @ V GS =-4.5V Pin Description R DS(ON) =98mΩ(typ.) @ V GS =-2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) Top View of
More informationFeatures. General Description. Applications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features General Description Micro Power Operation for Battery Applications Chopper Stabilized Amplifier Independent of North or South Pole Magnet, Easy for Manufacture Small
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8-PIN Synchronous Buck PWM Controller Features General Description Operating with Single 5V or 1V Input Drives N-Channel MOSFETs Simple Single-Loop Control Design - Voltage-Mode PWM Control - Full 0% to
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU4953BH. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -3V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =7mΩ(Typ.)@V GS =-4.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
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Three-Terminal Low Current Positive Voltage Regulator Features Three-Terminal Regulators Maximum Input Voltage : 30V Output Voltages of 5V, 12V Output Current Up to 100m No External Components Internal
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU20P5E. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
P-Channel Advanced Power MOSFET Features -2V/-5A, R DS (ON) =5mΩ(Typ.)@V GS =-4.5V R DS (ON) =65mΩ(Typ.)@V GS =-3V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green
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More informationRU20P7C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings. -20V/-5A, R DS (ON) GS =-2.5V
P-Channel Advanced Power MOSFET Features -V/-5A, R DS (ON) =mω(typ.)@v GS =-4.5V R DS (ON) =3mΩ(Typ.)@V GS =-.5V Low On-Resistance Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices
More informationRU30C8H. Complementary Advanced Power MOSFET. Applications. Absolute Maximum Ratings. N-Channel 30V/8A, P-Channel -30V/-7A,
RUC8H Complementary Advanced Power MOSFET Features N-Channel V/8A, R DS (ON) =mω(typ.) @ V GS =V R DS (ON) =6mΩ(Typ.) @ V GS =4.5V P-Channel -V/-7A, R DS (ON) =8mΩ (Typ.) @ V GS =-V R DS (ON) =5mΩ (Typ.)
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationRU1HP60R. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings -100V/-60A,
P-Channel Advanced Power MOSFET Features -V/-6A, R DS (ON) =8mΩ(Typ.)@V GS =-V Low On-Resistance Super High Dense Cell Design Fast Switching and Fully Avalanche Rated % avalanche tested 75 C Operating
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More informationKS3304DA. Single P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
Single P-Channel Advanced Power MOSFET Features -3V/-A, R DS (ON) =mω(typ.)@v GS =-V R DS (ON) =7.2mΩ(Typ.)@V GS =-4.V Low R DS (ON) Super High Dense Cell Design Reliable and Rugged G Pin Description D
More informationRU1HE16L. N-Channel Advanced Power MOSFET MOSFET. Applications. Absolute Maximum Ratings TO252. Power Management. N-Channel MOSFET
N-Channel Advanced Power MOSFET MOSFET Features 100V/16A, RDS (ON) =70mΩ(Typ.)@VGS=10V RDS (ON) =85mΩ(Typ.)@VGS=4.5V Pin Description Super High Dense Cell Design ESD protected Reliable and Rugged Lead
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N-Channel Advanced Power MOSFET Features 3V/2A, R DS (ON) =mω(typ.)@v GS =V R DS (ON) =2mΩ(Typ.)@V GS =4.V Fast Switching Speed Low gate Charge % avalanche tested Lead Free and Green Devices Available
More informationRU30P4B. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings
RU3P4B P-Channel Advanced Power MOSFET Features -25V/-4A, R DS (ON) =5mΩ(Typ.)@V GS =-V R DS (ON) =6mΩ(Typ.)@V GS =-4.5V R DS (ON) =8mΩ(Typ.)@V GS =-2.5V Low On-Resistance Super High Dense Cell Design
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationTO-252 Pin Configuration
WSF46 General Description The WSF46 is the highest performance trench with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications.
More informationRU20P4C. P-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings SOT23-3. Power Management Load Switch.
P-Channel Advanced Power MOSFET Features -20V/-4A, RDS (ON) =40m (Typ.) @ VGS=-4.5V RDS (ON) =55m (Typ.) @ VGS=-2.5V Pin Description Low R DS (ON) Super High Dense Cell Design Reliable and Rugged Lead
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DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
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N-Channel Enhancement Mode Power MOSFET DESCRIPTION The PE30C uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as.5v. This device is
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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More informationApplications. Pin Configuration. Ordering and Marking Information. Hall Effect Micro Switch IC
Hall Effect Micro Switch IC Features Micro Power Operation for Battery pplications Chopper Stabilized mplifier Independent of North or South Pole Magnet, Easy for Manufacture Small Size Package Lead Free
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TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
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TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationRU75N08S. N-Channel Advanced Power MOSFET. Applications. Absolute Maximum Ratings TO-263. Switching Application Systems.
N-Channel Advanced Power MOSFET Features 75V/80A, RDS (ON) =8mΩ (typ.) @VGS=10V Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche
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N-Channel Advanced Power MOSFET MOSFET Features 75V/80A, RDS (ON) =8mΩ VGS=10V I DS =40A Pin Description Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100%
More informationSSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
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