CJMNT30 PNP Power Transistor with N-MOSFET

Transcription

1 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB2 2-6L-SA Power Management Transistors-MOSFET CJMNT3 PNP Power Transistor with N-MOSFET V (BR)DSS /VR R DS(on) MAX / DFNWB2 2-6L-SA 36mΩ@4.5V 2V 41mΩ@2.5V.69A 48mΩ@1.8V -3V / - 2A FEATURES Ultra low collector-to-emitter saturation voltage High DC current gain Small package DFNWB2x2-6L-SA MARKING: 3 APPLICATIONS Charging circuit Other power management in portable equipments Equivalent circuit N3 N1 3 YY 3 = Device code YY=Code PIN1 TOP VIEW BOTTOM VIEW N4 N6 MAXIMUM RATINGS ( unless otherwise noted) Symbol Parameter Value Unit PNP Transistor V CBO Collector-Base Voltage -3 V V CEO Collector-Emitter Voltage -3 V V EBO Emitter-Base Voltage -6 V Collector Current-Continuous(Note1) -3 A Collector Current-Continuous(Note2) -2 A M Collector Current-Pulse(Note3) -6 A N-MOSFET V DS Drain-Source Voltage 2 V Gate-Source Voltage ±6 V Drain Current -Continuous(Note1).8 A Drain Current -Continuous(Note2).69 A M Drain Current - Pulse(Note3) 1.4 A Power Dissipation, Temperature and Thermal Resistance P D Power Dissipation.7 W PC Power Dissipation (Tc=25,Note1) 2.5 W R θja Thermal Resistance from Junction to Ambient 179 /W T j Junction Temperature 15 T stg Storage Temperature -55~+15 T L Lead Temperature 26 1 A-1,May,217

2 ELECTRICAL CHARACTERISTICS =25 unless otherwise specified PNP Transistor Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V (BR)CBO =-1mA,I E = -3 V Collector-emitter breakdown V (BR)CEO =-1mA,I B = -3 V Emitter-base breakdown voltage V (BR)EBO I E =-μa, = -6 V Collector cut-off current BO V CB =-3V,I E = -.1 μa Emitter cut-off current I EBO V EB =-5V, = -.1 μa DC current gain h FE V CE =-2V, =-1A 3 Collector-emitter saturation voltage V CE(sat) =-2A,I B =-ma V Base-emitter saturation voltage V BE(sat) =-2A,I B =-ma V Base-emitter voltage V BE(on) V CE =-2V, =-ma V N-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =V, ID=25µA 2 V Zero gate voltage drain current IDSS VDS =2V,VGS = V 1 µa Gate-body leakage current IGSS VGS =±5V, VDS = V ±5 µa Gate threshold voltage VGS(th) VDS =, ID =25µA V Drain-source on-resistance RDS(on) VGS =4.5V, ID =.55A mω VGS =2.5V, ID =.45A mω VGS =1.8V, ID =.35A mω Diode forward voltage V SD I S =.35A, VGS = V.5 1 V DYNAMIC PARAMETERS (note 4) Input Capacitance C iss 5 pf Reverse Transfer Capacitance C rss 8 pf Output Capacitance C oss VDS =1V,VGS =V,f =1MHz 13 pf SWITCHING PARAMETERS (note 4) Turn-on delay time t d(on) 22 ns Turn-on rise time t r =4.5V,V DS =1V, 8 ns Turn-off delay time t d(off) R L =1Ω,R GEN =6Ω, ID=.5A 7 ns Turn-off fall time t f 65 ns Total Gate Charge Q g 1.15 nc VDS =1V,VGS =4.5V, Gate-Source Charge Q gs.15 nc ID =.6A Gate-Drain Charge.23 nc Note: 1 Surface mounted on FR-4 board using 1 square inch pad size, 1oz copper 2 Surface mounted on FR-4 board using minimum pad size, 1oz copper Q gd 3 Pulse test: pulse width =3μs, duty cycle 2% 4 These parameters have no way to verify. 2 A-1,May,217

3 PNP Transistor Typical Characteristics COLLECTOR CURRENT COMMON EMITTER Static Characteristic -5mA -4.5mA -4mA -3.5mA -3mA -2.5mA -2mA -1.5mA -1mA I B =-.5mA COLLECTOR-EMITTER VOLTAGE V CE DC CURRENT GAIN h FE COMMON EMITTER V CE = -2V h FE = COLLECTOR CURRENT V BEsat - V CEsat BASE-EMITTER SATURATION VOLTAGE V BEsat = COLLECTOR-EMITTER SATURATION VOLTAGE V CEsat (mv) - -1 = β= COLLECTOR CURREMT COLLECTOR CURREMT β=1-3 COLLECTOR POWER DISSIPATION P C (mw) P C CAPACITANCE C (pf) 1 C ob /C ib C ib C ob V CB /V EB f=1mhz I E =/ = = AMBIENT TEMPERATURE ( ) REVERSE VOLTAGE V D,Jun,214

4 NMOS Typical Characteristics 5 4 Output Characteristics =5.5V =4.5V V DS =16V Transfer Characteristics DRAIN CURRENT (A) 3 2 =3.5V =2.5V DRAIN CURRENT 3 = 1 =1.5V DRAIN TO SOURCE VOLTAGE V DS GATE TO SOURCE VOLTAGE R DS(ON) 6 R DS(ON) ON-RESISTANCE R DS(ON) (mω) 3 =1.8V =2.5V ON-RESISTANCE R DS(ON) (mω) 3 =55mA = =4.5V 3 6 DRAIN CURRENT GATE TO SOURCE VOLTAGE I S V SD 1. Threshold Voltage SOURCE CURRENT I S 1 1 = THRESHOLD VOLTAGE V TH =25uA SOURCE TO DRAIN VOLTAGE V SD JUNCTION TEMPERATURE T J ( ) 4 D,Jun,214

5 DFNWB2X2-6L-SA Package Outline Dimensions Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A A2.23REF..8REF. D E D E D E e1.65typ..26typ. e2.325typ..13typ. k.min..8min. b e.65typ..26typ. L DFNWB2X2-6L-SA Suggested Pad Layout 5 A-1,May,217

6 DFNWB2X2-6L Tape and Reel 6 A-1,May,217