General Purpose Transistors
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- Candace Newton
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1 General Purpose Transistors PNP Silicon FEATURE Collector current capability I C = -5 ma. LBC87-6LTG LBC87-25LTG LBC87-4LTG Collector-emitter voltage V CEO (max) = -45 V. General purpose switching and amplification. PNP complement: LBC87 Series. 3 We declare that the material of product compliance with RoHS requirements. 2 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping SOT 23 LBC87-6LTG 5A 3/Tape&Reel LBC87-6LT3G 5A /Tape&Reel LBC87-25LTG 5B 3/Tape&Reel 3 COLLECTOR LBC87-25LT3G 5B /Tape&Reel BASE LBC87-4LTG 5C 3/Tape&Reel LBC87-4LT3G 5C /Tape&Reel 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 V Collector Base Voltage V CBO 5 V Emitter Base Voltage V EBO 5. V Collector Continuous I C 5 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR 5 Board, () T A = 225 mw Derate above.8 mw/ C Thermal Resistance, Junction to Ambient R θja 556 C/W Total Device Dissipation Alumina Substrate, (2) T A = 3 mw Derate above 2.4 mw/ C Thermal Resistance, Junction to Ambient R θja 47 C/W Junction and Storage Temperature T J, T stg 55 to +5 C. FR 5 =. x.75 x.62 in. 2. Alumina =.4 x.3 x.24 in. 99.5% alumina. P D P D Rev.O /
2 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage (I C = ma) V(BR)CEO 45 V Collector Emitter Breakdown Voltage (V EB =, IC = µa) V(BR)CES 5 V Emitter Base Breakdown Voltage (I E =. µa) V(BR)EBO 5. V Collector Cutoff I CBO (V CB = 2 V) na (V CB = 2 V, TJ = 5 C) 5. µa ELECTRICAL CHARACTERISTICS (TA = unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Gain h FE (I C = ma, V CE =. V) LBC LBC LBC (I C = 5 ma, V CE =. V) 4 Collector Emitter Saturation Voltage (I C = 5 ma, I B = 5 ma) V CE(sat).7 V Base Emitter On Voltage (I C = 5 ma, V CE=. V) V BE(on).2 V SMALL SIGNAL CHARACTERISTICS Gain Bandwidth Product (I C = ma, V CE = 5. V dc, f = MHz) f T MHz Output Capacitance C obo pf (V CB = V, f =. MHz) Rev.O 2/
3 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 6LTG h FE, DC CURRENT GAIN C V CE = V V CE(sat), COLLECTOR EMITTER. I C /I B = 5 C Figure. DC Gain vs. Collector Figure 2. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASE EMITTER I C /I B =.. 5 C. V BE(on), BASE EMITTER VOLTAGE (V).2. V CE = 5 V C. Figure 3. Base Emitter Saturation Voltage vs. Collector Figure 4. Base Emitter Voltage vs. Collector Rev.O 3/
4 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 6LTG VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = - ma I C = -3 ma T J = I C = -5 ma I C = - ma I B, BASE CURRENT (ma) Figure 5. Saturation Region V, TEMPERATURE COEFFICIENTS (mv/ C) θ VB for V BE VC for V CE(sat) I C, COLLECTOR CURRENT Figure 6. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob V R, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitances Rev.O 4/
5 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 25LTG h FE, DC CURRENT GAIN C V CE = V V CE(sat), COLLECTOR EMITTER. I C /I B = 5 C Figure 8. DC Gain vs. Collector Figure 9. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASE EMITTER I C /I B =.. 5 C. V BE(on), BASE EMITTER VOLTAGE (V).2. V CE = 5 V C. Figure. Base Emitter Saturation Voltage vs. Collector Figure. Base Emitter Voltage vs. Collector f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz). V CE = V T A = Figure 2. Gain Bandwidth Product vs. Collector Rev.O 5/
6 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 25LTG VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = - ma I C = -3 ma T J = I C = -5 ma I C = - ma I B, BASE CURRENT (ma) Figure 3. Saturation Region V, TEMPERATURE COEFFICIENTS (mv/ C) θ VB for V BE VC for V CE(sat) I C, COLLECTOR CURRENT Figure 4. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob V R, REVERSE VOLTAGE (VOLTS) Figure 5. Capacitances Rev.O 6/
7 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 4LTG h FE, DC CURRENT GAIN C... V CE = V Figure 6. DC Gain vs. Collector V CE(sat), COLLECTOR EMITTER... I C /I B =.. 5 C Figure 7. Collector Emitter Saturation Voltage vs. Collector V BE(sat), BASE EMITTER I C /I B =.. 5 C. V BE(on), BASE EMITTER VOLTAGE (V).2. V CE = 5 V C. Figure 8. Base Emitter Saturation Voltage vs. Collector Figure 9. Base Emitter Voltage vs. Collector f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz). V CE = V T A = Figure 2. Gain Bandwidth Product vs. Collector Rev.O 7/
8 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 4LTG VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = - ma I C = -3 ma T J = I C = -5 ma I C = - ma I B, BASE CURRENT (ma) Figure 2. Saturation Region V, TEMPERATURE COEFFICIENTS (mv/ C) θ VB for V BE VC for V CE(sat) I C, COLLECTOR CURRENT Figure 22. Temperature Coefficients C, CAPACITANCE (pf) C ib C ob V R, REVERSE VOLTAGE (VOLTS) Figure 23. Capacitances Rev.O 8/
9 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG TYPICAL CHARACTERISTICS LBC87 6LTG, LBC87 25LTG, LBC87 4LTG.. S ms ms Thermal Limit ms.. V CE, COLLECTOR EMITTER VOLTAGE (V) Figure 24. Safe Operating Area Rev.O 9/
10 LBC87-6LTG,LBC87-25LTG,LBC87-4LTG SOT-23 V D A L 3 2 G H B C S K J NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D G H J K L S V inches mm Rev.O /
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UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2N441 NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. ORDERING
MMBTA05L, MMBTA06L. Driver Transistors. NPN Silicon
Driver Transistors NPN Silicon Features S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ0 Qualified and PPAP Capable These Devices are
MPSA92, MPSA93. High Voltage Transistors. PNP Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
MPSA9, MPSA9 is a Preferred Device High Voltage Transistors PNP Silicon MAXIMUM RATINGS CollectorEmitter Voltage CollectorBase Voltage Rating Symbol Value Unit MPSA9 MPSA9 V CEO V CBO 00 00 00 00 EmitterBase
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
NPN Silicon Planar High Voltage Transistor
NPN Silicon Planar High Voltage Transistor FEATURES High BV CEO, BV CBO High current gain Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC Halogen-Free according to IEC 61249-2-21
ZXT11N20DF SUMMARY V CEO =20V; R SAT = 2.5A. = 40m ;I C SOT23. SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR
ZXT11N20DF SuperSOT4 20V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =20V; R SAT = 40m ;I C = 2.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix
NSTB1005DXV5T1, NSTB1005DXV5T5. Dual Common Base Collector Bias Resistor Transistors
NSTB005DXV5T, NSTB005DXV5T5 Preferred Devices Dual Common Base Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
BC856ALT1G Series. General Purpose Transistors. PNP Silicon
General Purpose Transistors PNP Silicon Features S and NS Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and PPAP Capable These Devices
2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS
Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter
NSV2029M3T5G. PNP Silicon General Purpose Amplifier Transistor PNP GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT
PNP Silicon General Purpose Amplifier Transistor This PNP transistor is designed for general purpose amplifier applications. This device is housed in the package which is designed for low power surface
WPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//:
Single, PNP, -30V, -A, Power Transistor with 20V N-MOSFET Http//:www.willsemi.com Descriptions The is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD MJE13007D NPN BIPOLAR POWER TRANSISTOR FOR SWITCHING POWER SUPPLY APPLICATIONS DESCRIPTION The UTC MJE13007D is designed for high-voltage, high-speed power switching inductive
MJW3281A (NPN) MJW1302A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors
MJW3281A (NPN) MJW132A (PNP) Complementary NPN-PNP Silicon Power Bipolar Transistors The MJW3281A and MJW132A are PowerBase power transistors for high power audio, disk head positioners and other linear
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: V CEO =15V; V CE(sat) =.1V; I C = 1.5A; PNP: V CEO =-12V; V CE(sat) =-.1V; I C = -1.25A; DESCRIPTION This new combination device comprises
UNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD PNP PLANAR SILICON TRANSISTOR FEATURES SOT-89 * Low collector-to-emitter saturation voltage: V CE(SAT) =-0.4V max/i C =-A, I B =-0.A TO- TO-6 ORDERING INFORMATION Ordering
TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS
TIP7G, TIP8G, TIP5G High oltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features
ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low
ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY. BV CEO = -30V : R SAT = 24m DESCRIPTION FEATURES APPLICATIONS PINOUT
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BV CEO = -30V : R SAT = 24m ; I C = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low
MPSA18G. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Low Noise Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 45 Vdc Collector Base Voltage V CBO 45
SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
PT23T5401 Transistor. Feature. Mechanical Characteristics. Absolute maximum Top View. Parameter Symbol Value Units
PT23T54 Transistor Feature 3 - Collector PNP epitaxial planar silicon transistor - Base Top View 2 - Emitter Mechanical Characteristics Lead finish:% matte Sn(Tin) Mounting position: Any Qualified max
NSTB1002DXV5T1G, NSTB1002DXV5T5G
NSTB002DXV5TG, NSTB002DXV5T5G Preferred Devices Dual Common BaseCollector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/MMBT5089
UNISONIC TECHNOLOGIES CO., LTD MMBT5088/ NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION 3 The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from
ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m
30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV CEO = -30V : R SAT = 31m ; I C = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low
ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m
30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV CEO = -30V : R SAT = 31m ; I C = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5 th generation low saturation 30V PNP transistor offers
FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =80V; R SAT = 90m ;I C = 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure
MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors
MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth
ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8
ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 45m ;I C = 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the
NST3906DXV6T1, NST3906DXV6T5. Dual General Purpose Transistor
NST396DXV6T1, NST396DXV6T5 Dual General Purpose Transistor The NST396DXV6T1 device is a spin off of our popular SOT23/SOT323 threeleaded device. It is designed for general purpose amplifier applications