7X = Device Marking. Symbol
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- Alan Malone
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1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the SMUN52DW series, two BRT devices are housed in the SOT363 package which is ideal for low power surface mount applications where board space is at a premium. Simplifies Circuit Design Reduces Board Space Reduces Component Count Pb-Free Package is available Q R2 R R R2 2 3 Q MARKING DIAGRAM X 2 3 7X = Device Marking.55(.4).47(.2).4(.35).6(.5).87(2.2).79(2.).43(.).35(.9) SOT TYP (.65TYP).2REF (.525)REF.96(2.45).85(2.5).8(.46).(6) 8 o o.6(.5).3(.8) Dimensions in inches and (millimeters).4(.).(.).39(.).35(.9).53(.35).45(.5) MAXIMUM RATINGS (T A = 25 C unless otherwise noted, common for Q and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 5 Vdc Collector-Emitter Voltage V CEO 5 Vdc Collector Current madc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25 C Derate above 25 C Symbol Symbol Max Note Note 2 Total Device Dissipation T A = 25 C P D mw Derate above 25 C.5 2. mw/ C Thermal Resistance Junction-to-Ambient R JA Max Note Note 2 P D C/W mw mw/ C Thermal Resistance Junction-to-Ambient R θja C/W Thermal Resistance Junction-to-Lead R θjl C/W Junction and Storage Temperature T J, T stg 55 to +5 C Unit Unit. Minimum Pad 2. x. inch Pad 22-Jun-27 Rev. A Page of 8
2 DEVICE MARKING, RESISTOR VALUES AND ORDERING INFORMATION Device Package Marking R(K) R2(K) Shipping SMUN52DW SOT-363 7A 3/Tape&Reel SMUN522DW SOT-363 7B /Tape&Reel SMUN523DW SOT-363 7C /Tape&Reel SMUN524DW SOT-363 7D 47 3/Tape&Reel SMUN525DW SOT-363 7E open 3/Tape&Reel SMUN526DW SOT-363 7F 4.7 open 3/Tape&Reel SMUN523DW SOT-363 7G 3/Tape&Reel SMUN523DW SOT-363 7H /Tape&Reel SMUN5232DW SOT-363 7J /Tape&Reel SOT-363 7K /Tape&Reel SOT-363 7L /Tape&Reel SOT-363 7M /Tape&Reel SMUN5236DW SOT-363 7N 3/Tape&Reel SOT-363 7P /Tape&Reel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2 ) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 5 V, I E = ) BO nadc Collector-Emitter Cutoff Current (V CE = 5 V, I B = ) EO 5 nadc Emitter-Base Cutoff Current SMUN52DW I EBO.5 madc (V EB = 6. V, = ) SMUN522DW SMUN523DW SMUN524DW SMUN525DW SMUN526DW SMUN523DW SMUN523DW SMUN5232DW SMUN5236DW Collector-Base Breakdown Voltage ( = A, I E = ) V (BR)CBO 5 Vdc Collector-Emitter Breakdown Voltage(Note 4.)( = 2. ma,i B=) V (BR)CEO 5 Vdc 4. Pulse Test: Pulse Width < 3 s, Duty Cycle < 2.% 22-Jun-27 Rev. A Page 2 of 8
3 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 5.) DC Current Gain SMUN52DW h FE 35 6 (V CE = V, = 5. ma) SMUN522DW SMUN523DW SMUN524DW SMUN525DW SMUN526DW SMUN523DW SMUN523DW SMUN5232DW SMUN5236DW Collector-Emitter Saturation Voltage (= ma,i B=.3 ma) V CE(sat) 5 Vdc (= ma, I B= 5mA) SMUN523DW/SMUN523DW (= ma, I B= ma) SMUN525DW/SMUN526DW SMUN5232DW// Output Voltage (on) V SMUN52DW OL Vdc (V CC = 5. V, V B = 2.5 V, R L =. kω) SMUN522DW (V CC = 5. V, V B = 3.5 V, R L =. kω) (V CC = 5. V, V B = 5.5 V, R L =. kω) (V CC = 5. V, V B = 4. V, R L =. kω) SMUN524DW SMUN525DW SMUN526DW SMUN523DW SMUN523DW SMUN5232DW SMUN523DW SMUN5236DW Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. kω) V OH 4.9 Vdc (V CC = 5. V, V B =.5 V, R L =. kω) SMUN523DW (V CC = 5. V, V B = 5 V, R L =. kω) SMUN525DW SMUN526DW 5. Pulse Test: Pulse Width < 3 ms, Duty Cycle < 2.% 22-Jun-27 Rev. A Page 3 of 8
4 R /R ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 6.) Input Resistor SMUN52DW SMUN522DW SMUN523DW SMUN524DW SMUN525DW SMUN526DW SMUN523DW SMUN523DW SMUN5232DW SMUN5236DW R kω Resistor Ratio SMUN52DW/SMUN522DW SMUN523DW/SMUN5236DW SMUN524DW/SMUN525DW SMUN526DW/SMUN523DW SMUN523DW/SMUN5232DW Pulse Test: Pulse Width < 3 ms, Duty Cycle < 2.% 3 P D, POWER DISSIPATION (mw) C T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve 22-Jun-27 Rev. A Page 4 of 8
5 TYPICAL ELECTRICAL CHARACTERISTICS SMUN52DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 2. V CE(sat) versus h FE, DC CURRENT GAIN (NORMALIZED) Figure 3. DC Current Gain 4 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current 22-Jun-27 Rev. A Page 5 of 8
6 TYPICAL ELECTRICAL CHARACTERISTICS SMUN522DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 7. V CE(sat) versus h FE, DC CURRENT GAIN (NORMALIZED) Figure 8. DC Current Gain 4 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current versus Input oltage ,COLLECTOR CURRENT (ma) Figure. Input Voltage versus Output Current 22-Jun-27 Rev. A Page 6 of 8
7 TYPICAL ELECTRICAL CHARACTERISTICS SMUN523DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 2. V CE(sat) versus h FE, DC CURRENT GAIN (NORMALIZED) Figure 3. DC Current Gain C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input oltage Figure 6. Input Voltage versus Output Current 22-Jun-27 Rev. A Page 7 of 8
8 TYPICAL ELECTRICAL CHARACTERISTICS SMUN524DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 7. V CE(sat) versus h FE, DC CURRENT GAIN (NORMALIZED) Figure 8. DC Current Gain 4 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 2. Output Current versus Input oltage ,COLLECTOR CURRENT (ma) Figure 2. Input Voltage versus Output Current 22-Jun-27 Rev. A Page 8 of 8
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