Obsolete Product(s) - Obsolete Product(s)
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- Ronald Ezra Young
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1 PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL PLANAR NPN TRANSISTOR TO-92 PACKAGE SUITABLE FOR THROUGH-HOLE PCB ASSEMBLY THE PNP COMPLEMENTARY TYPE IS PN2907A TO-92 TO-92 APPLICATIONS Bulk Ammopack WELL SUITABLE FOR T AND HOME APPLIANCE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE INTERNAL SCHEMATIC DIAGRAM Symbol Parameter alue Unit CBO Collector-Emitter oltage (I E = 0) 75 CEO Collector-Emitter oltage (IB = 0) 40 EBO Emitter-Base oltage (I C = 0) 6 I C Collector Current 0.6 A I CM Collector Peak Current (t p < 5 ms) 0.8 A P tot Total Dissipation at T amb = 25 o C 500 mw T stg Storage Temperature -65 to 150 T j Max. Operating Junction Temperature 150 o C o C February /6
2 THERMAL DATA R thj-amb Rthj-case Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Max Max o C/W o C/W ELECTRICAL CHARACTERISTICS (T case = 25 o C unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit I CEX Collector Cut-off CE = na Current ( BE = -3 ) IBEX Base Cut-off Current CE = na ( BE = -3 ) I CBO Collector Cut-off CB = na Current (I E = 0) CB = 75 T j = 150 o C 10 µa I EBO Emitter Cut-off Current (IC = 0) EB = 3 15 na (BR)CEO (BR)CBO (BR)EBO CE(sat) BE(sat) Collector-Emitter Breakdown oltage (I B = 0) Collector-Base Breakdown oltage (I E = 0) Emitter-Base Breakdown oltage (I C = 0) Collector-Emitter Saturation oltage I C = 10 ma 40 IC = 10 µa 75 IE = 10 µa 6 I C = 150 ma I C = 500 ma I B = 15 ma I B = 50 ma Collector-Base I C = 150 ma I B = 15 ma Saturation oltage I C = 500 ma I B = 50 ma h FE DC Current Gain I C = 0.1 ma CE = 10 I C = 1 ma CE = 10 IC = 10 ma CE = 10 I C = 150 ma CE = 10 IC = 150 ma CE = 1 I C = 500 ma CE = f T Transition Frequency I C = 20 ma CE = 20 f = 100MHz 270 MHz Collector-Base I E = 0 CB = 10 f = 1 MHz 4 8 pf Capacitance Emitter-Base I C = 0 EB = 0.5 f = 1MHz pf Capacitance NF Noise Figure I C = 0.1 ma CE = 10 f = 1 KHz 4 db f = 200 Hz RG = 1 KΩ h ie Input Impedance CE = 10 I C = 1 ma f = 1 KHz 2 8 KΩ CE = 10 I C = 10 ma f = 1 KHz KΩ C CBO C EBO h re Reverse oltage Ratio CE = 10 I C = 1 ma f = 1 KHz CE = 10 I C = 10 ma f = 1 KHz h fe Small Signal Current Gain CE = 10 I C = 1 ma f = 1 KHz CE = 10 IC = 10 ma f = 1 KHz hoe Output Admittance CE = 10 IC = 1 ma f = 1 KHz CE = 10 I C = 10 ma f = 1 KHz Pulsed: Pulse duration = 300 µs, duty cycle 2 % µs µs 2/6
3 ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit t d Delay Time I C = 150 ma I B = 15 ma 5 10 ns tr Rise Time CC = ns ts Storage Time IC = 150 ma IB1 = - IB2 = 15 ma ns tf Fall Time CC = ns Pulsed: Pulse duration = 300 µs, duty cycle 2 % 3/6
4 TO-92 MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A b D E e e L R S W degree 6 degree 4 degree 6 degree 4/6
5 TO-92 AMMOPACK SHIPMENT (Suffix"-AP") MECHANICAL DATA DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A T T T d P P F1,F delta H W W W W H H H D t L I delta P /6
6 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 2003 STMicroelectronics Printed in Italy All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. 6/6
Obsolete Product(s) - Obsolete Product(s)
MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES PRELIMINARY DATA DESCRIPTION The 2N2219A and 2N2222A are silicon Planar Epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal
MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS
MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code Marking Package Shipment MJD122T4 MJD122-1 MJD127T4 MJD127-1 MJD122 MJD122 MJD127 MJD127 TO-252 (DPAK) TO-251
STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR
STX93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR ST93003 SILICON IN TO-92 PACKAGE MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY
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INTEGRATED ANTISATURATION AND PROTECTION NETWORK INTEGRATED ANTIPARALLEL COLLECTOR EMITTER DIODE HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
2N2219A 2N2222A HIGH SPEED SWITCHES
2N2219A 2N2222A HIGH SPEED SWITCHES DESCRIPTION The 2N2219A and 2N2222A are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2219A) and in Jedec TO-18 (for 2N2222A) metal case. They are designed
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BUL138FP HIGH OLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR HIGH OLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE
2STA1695. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -140 V Complementary to 2STC4468 Typical f t = 20 MHz Fully characterized at 125 C Applications 1 2 3 Audio power
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Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed 3 Miniature SOT-23 plastic package for surface
2STR2215. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 C Application 1 2 3 Audio power
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation voltage High current gain characteristic TAB Fast-switching speed Applications Voltage regulators High
Obsolete Product(s) - Obsolete Product(s)
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -120 V Complementary to 2STC4467 Fast-switching speed Typical f t = 20 MHz Fully characterized at 125 o C Applications
Order codes Marking Package Packaging. STD2805T4 D2805 DPAK Tape & reel STD D2805 IPAK Tube. June 2007 Rev 1 1/9
Low voltage fast-switching PNP power transistor Preliminary Data Features Very low collector to emitter saturation voltage High current gain characteristic Fast-switching speed Surface-mounting DPAK (TO-252)
STD1802T4-A. Low voltage fast-switching NPN power transistor. Features. Description. Applications
Low voltage fast-switching NPN power transistor Features This device is qualified for automotive application Very low collector to emitter saturation voltage High current gain characteristic Fast-switching
2STA1943. High power PNP epitaxial planar bipolar transistor. Features. Application. Description
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO > -230V Complementary to 2STC5200 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier Description
2STC4468. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 140 V Complementary to 2STA1695 Typical f t = 20 MHz Fully characterized at 125 o C Application Audio power amplifier
2STR SOT-23 Tape and reel 2STR1230G 130G SOT-23 Tape and reel
Low voltage fast-switching NPN power transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23 plastic package for surface
2STD1665. Low voltage fast-switching NPN power transistor. Features. Applications. Description
Low voltage fast-switching NPN power transistor Features Very low collector to emitter saturation volatage High current gain characteristic Fast-switching speed Through-hole IPAK (TO-251) power package
Order codes Marking Package Packaging 2STF SOT-89 2STN2550 N2550 SOT-223. November 2008 Rev 1 1/8
2STF2550 2STN2550 Low voltage high performance PNP power transistors Preliminary Data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface
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High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2STX2220. High Gain Low Voltage PNP Power Transistor. General features. Description. Internal schematic diagram. Applications.
High Gain Low Voltage PNP Power Transistor General features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current In compliance with the 2002/93/EC
2N2219AHR. Hi-Rel NPN bipolar transistor 40 V A. Features. Description
Hi-Rel NPN bipolar transistor 40 V - 0.8 A Features BV CEO 40 V I C (max) 0.8 A H FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Hi-Rel NPN bipolar transistor Linear gain characteristics
MMBTA42. Small signal NPN transistor. Features. Applications. Description
Small signal NPN transistor Datasheet - production data Features Miniature SOT-23 plastic package for surface mounting circuits Tape and reel packaging The PNP complementary type is MMBTA92 SOT-23 Figure
2STC5242. High power NPN epitaxial planar bipolar transistor. Features. Application. Description
2STC5242 High power NPN epitaxial planar bipolar transistor Features High breakdown voltage V CEO = 230 V Complementary to 2STA1962 Fast-switching speed Typical f T = 30 MHz Application Audio power amplifier
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. STX112-AP X112 NPN TO92-AP Ammopack STX117-AP X117 PNP TO92-AP Ammopack
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High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2STC5949 Typical f t = 25 MHz Fully characterized at 125 o C Application Audio power amplifier
Obsolete Product(s) - Obsolete Product(s)
ST8812FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED TIGHT hfe CONTROL LARGE R.B.S.O.A. FULLY INSULATED PACKAGE U.L. COMPLIANT FOR EASY MOUNTING
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BU208A BU508A/BU508AFI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY (> 1500 V) FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING
BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS. Figure 1: Package
BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTORS n n n n VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE FULLY INSULATED PACKAGE
STN2580. High voltage fast switching NPN power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast switching NPN power transistor Datasheet production data Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is
SD1488 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS
RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY 470 MHz 12.5 VOLTS EFFICIENCY % COMMON EMITTER P OUT = 38 W MIN. WITH 5.8 db GAIN DESCRIPTION The SD1488 is a 12.5 V Class C epitaxial
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High gain Low Voltage PNP power transistor Features Very low Collector to Emitter saturation voltage D.C. Current gain, h FE >100 1.5 A continuous collector current Applications Power management in portable
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2N6284 2N6287 Complementary power Darlington transistors Features Complementary transistors in monolithic Darlington configuration Integrated collector-emitter antiparallel diode Applications Audio power
2ST2121. High power PNP epitaxial planar bipolar transistor. Features. Applications. Description 1 2 TO-3
High power PNP epitaxial planar bipolar transistor Features High breakdown voltage V CEO = -250 V Complementary to 2ST5949 Typical f t = 25 MHz Fully characterized at 125 o C Applications Audio power amplifier
STX616. High voltage NPN power transistor. Features. Applications. Description
STX616 High voltage NPN power transistor Features High voltage capability High DC current gain Minimum lot-to-lot spread for reliable operation Applications Switching mode power supply Battery charger
Order codes Marking Package Packaging. STX0560 X0560 TO-92 Bag STX0560-AP X0560 TO-92AP Ammopack. December 2010 Doc ID Rev 1 1/9
High voltage fast-switching NPN power transistor Preliminary data Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description
STR2550. High voltage fast-switching PNP power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
High voltage fast-switching PNP power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape and
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BU808DFI HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN MONOLITHIC DARLINGTON WITH INTEGRATED FREE-WHEELING DIODE HIGH VOLTAGE CAPABILITY ( > 1400
Features. Description. Table 1. Device summary. Quality Level. Engineering Model
Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 LCC-3UB Figure 1. Internal schematic diagram Parameter Value BV CEO 60 V I C (max) 50 ma h
MJE182 Low voltage high speed switching NPN transistor Features Applications Description High speed switching NPN device
Low voltage high speed switching NPN transistor Features High speed switching NPN device Applications Audio amplifier High speed switching applications Description This device is an NPN low voltage transistor
SD1275 RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS. FEATURES SUMMARY 160 MHz 13.6 VOLTS COMMON EMITTER P OUT = 40 W MIN.
RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS FEATURES SUMMARY 1 MHz 13.6 VOLTS COMMON EMITTER P OUT = W MIN. WITH 9 db GAIN Figure 1. Package DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial
Obsolete Product(s) - Obsolete Product(s)
TIP33C Complementary power transistors Features. Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Description The devices are manufactured in epitaxial-base
STX13005G-AP. High voltage fast-switching NPN power transistor. Features. Applications. Description
STX13005 High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
2STD1360 2STF1360-2STN1360
2STD1360 2STF1360-2STN1360 Low voltage fast-switching NPN power transistors Features Very low collector-emitter saturation voltage High current gain characteristic Fast-switching speed 4 1 2 3 4 1 3 2
BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)).
BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS
2STR2160. Low voltage fast-switching PNP power transistor. Features. Applications. Description
Low voltage fast-switching PNP power transistor Datasheet - production data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Miniature SOT-23
STGP10NB60SD. N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT. General features. Description. Internal schematic diagram.
STGP10NB60SD N-CHANNEL 10A - 600V - TO-220 Low Drop PowerMESH IGBT General features Type V CES V CE(sat) (Max)@ 25 C I C @100 C STGP10NB60SD 600V < 1.7V 10A HIGH CURRENT CAPABILITY HIGH INPUT IMPEDANCE
ST2111FX HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. Features. Applications. Internal Schematic Diagram. Description.
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR Features NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L. COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY (1500V) HIGH SWITCHING SPEED
BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR. STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED
BUH1215 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS
3STL2540. Low voltage high performance PNP power transistor. Features. Applications. Description
Low voltage high performance PNP power transistor Datasheet production data Features Very low collector-emitter saturation voltage High current gain characteristic Small, thin, leadless SMD plastic package
2STN2540. Low voltage fast-switching PNP power bipolar transistor. Features. Applications. Description
2STN2540 Low voltage fast-switching PNP power bipolar transistor Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Surface mounting device in
Order codes Packages Lead finish Marking Type EPPL Packaging. 2N5153SHR SMD.5 Gold ESCC Flight Yes Strip pack
Hi-Rel PNP bipolar transistor 80 V - 5 A Features BV CEO I C (max) Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific
ESM3030DV NPN DARLINGTON POWER MODULE
ESM3030D NPN DARLINGTON POWER MODULE HIGH CURRENT POWER BIPOLAR MODULE ERY LOW Rth JUNCTION CASE SPECIFIED ACCIDENTAL OERLOAD AREAS ULTRAFAST FREEWHEELING DIODE FULLY INSULATED PACKAGE (UL COMPLIANT) EASY
STR1550. High voltage fast-switching NPN power transistor. Features. Applications. Description. Excellent h FE linearity up to 50 ma
STR1550 High voltage fast-switching NPN power transistor Features Datasheet - production data Excellent h FE linearity up to 50 ma 3 1 2 Miniature SOT-23 plastic package for surface mounting circuits Tape
D44H8 - D44H11 D45H8 - D45H11
D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed TAB Applications Power amplifier Switching circuits 1 2 3 Description
BUX87. High voltage NPN power transistor. Features. Applications. Description
High voltage NPN power transistor Features High voltage capability (450 V V CEO ) Minimum lot-to-lot spread for reliable operation High DC current gain Applications Flyback and forward single transistor
Obsolete Product(s) - Obsolete Product(s)
High voltage fast-switching NPN power transistor Features High voltage capability Minimum lot-to-lot spread for reliable operation ery high switching speed Applications Electronic ballast for fluorescent
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Dual NPN-PNP complementary Bipolar General features V CE(sat) h FE I C 0.35V >100 1A High gain Low V CE(sat) Simplified circuit design Reduced component count Applications Push-Pull or Totem-Pole configuration
STD840DN40. Dual NPN high voltage transistors in a single package. Features. Applications. Description
Dual NPN high voltage transistors in a single package Datasheet production data Features Low V CE(sat) Simplified circuit design Reduced component count Fast switching speed Applications Compact fluorescent
STN High voltage fast-switching PNP power transistor. Features. Application. Description. High voltage capability Very high switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Very high switching speed 4 Application Electronics ballasts for fluorescent lighting Description 1 2 SOT-223 3 The device
R 1 typ. = 15 kω. Order codes Marking Polarity Package Packaging. 2N6036 2N6036 NPN SOT-32 Tube 2N6039 2N6039 PNP SOT-32 Tube
2N6036 2N6039 Complementary power Darlington transistors Features. Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications
Order codes Marking Polarity Package Packaging. MJD44H11T4 MJD44H11 NPN DPAK Tape and reel MJD45H11T4 MJD45H11 PNP DPAK Tape and reel
MJD44H11 MJD45H11 Complementary power transistors Features. Low collector-emitter saturation voltage Fast switching speed Surface-mounting TO-252 (DPAK) power package in tape and reel (suffix "T4") Applications
MJD122 MJD127 Complementary power Darlington transistors Features Applications Description
MJD122 MJD127 Complementary power Darlington transistors Features Low collector-emitter saturation voltage Integrated antiparallel collector-emitter diode Applications General purpose linear and switching
BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
BUH1015 BUH1015HI HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR
ST26025A. PNP power Darlington transistor. Features. Applications. Description
ST26025A PNP power Darlington transistor Features High current monolithic Darlington configuration Integrated antiparallel collector-emitter diode Applications Automotive fan control Linear and switching
BUL743. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching speed Applications
Order codes ESCC Part num. Quality Level Rad. level Package Lead Finish Mass EPPL
Hi-Rel 40 V - 0.8 A NPN bipolar transistor Features Parameter Value BV CEO 40 V I C (max) 0.8 A h FE at 10 V - 150 ma > 100 Operating temperature range - 65 C to + 200 C Linear gain characteristics Hermetic
STN9260. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Features High voltage capability Fast switching speed Applications Lighting Switch mode power supply Description This device is a high voltage fast-switching
Features 3. Order codes ESCC part num. Qual. level Rad level Packages Lead finish Mass (g) EPPL
Hi-Rel 80 V - 1 A NPN bipolar transistor Features 3 BV CEO 80 V I C (max) 1 A H FE at 10 V - 150 ma > 100 Operating temperature range -65 C to +200 C 1 2 2 3 TO-18 LCC-3 3 1 Hi-Rel NPN bipolar transistor
STD830CP40. Complementary transistor pair in a single package. Features. Application. Description
Complementary transistor pair in a single package Datasheet production data Features Low CE(sat) Simplified circuit design Reduced component count Low spread of dynamic parameters Application Compact fluorescent
BU941Z/BU941ZP BU941ZPFI
BU941Z/BU941ZP BU941ZPFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON TRANSISTOR VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES
2N4401 & 2N4403 General Purpose Switching Transistors
Features: NPN/PNP Silicon Planar Epitaxial Transistors. General purpose Switching Applications. 2N 4401 Type NPN. 2N 4403 Type PNP. 2N4401 NPN TO92 2N4403 PNP Dimensions Minimum Maximum A 4.32 5.33 B 4.45
Order codes Marking Package Packaging
STX13003 High voltage fast-switching NPN power transistor Features High voltage capability Very high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery charger Description The
SD1731 (TH562) RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS. Figure 1. Package
RF POWER BIPOLAR TRANSISTORS HF SSB APPLICATIONS FEATURES SUMMARY OPTIMIZED FOR SSB 30 MHz 50 VOLTS EFFICIENCY 40% COMMON EMITTER GOLD METALLIZATION P OUT = 220 W PEP WITH 13 db GAIN Figure 1. Package
STN9360. High voltage fast-switching PNP power transistor. Features. Applications. Description. High voltage capability Fast switching speed
High voltage fast-switching PNP power transistor Datasheet production data Features High voltage capability Fast switching speed 4 Applications Lighting Switch mode power supply Description 2 SOT-223 3
BULB7216 BUL7216. High voltage fast-switching NPN power transistor. Features. Applications. Description
BULB7216 BUL7216 High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters High voltage capability Minimum lot-to-lot spread for reliable operation Very high switching
Features. H FE at 10 V ma > 150. Description. Table 1. Device summary. Agency specification
Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Features Datasheet - production data TO-78 1 2 3 4 5 6 LCC-6 Figure 1. Internal schematic diagram for TO-78 BV CEO I C (max) Hi-Rel PNP dual matched
STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT
STGP7NB60KD - STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D 2 PAK SHORT CIRCUIT RATED PowerMESH IGBT TYPE V CES V CE(sat) I C STGP7NB60KD STGP7NB60KDFP STGB7NB60KD 600 V 600 V 600 V
STD10NF10 N-CHANNEL 100V Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET
N-CHANNEL 100V - 0.115 Ω - 13A IPAK/DPAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STD10NF10 100 V
BUL39D. High voltage fast-switching NPN power transistor. Features. Application. Description
High voltage fast-switching NPN power transistor Features Integrated antiparallel collector-emitter diode High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable
Order codes Marking Package Packaging
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters ery high switching speed Applications Compact fluorescent lamps (CFLs) SMPS for battery
Features. Description. Table 1. Device summary. Agency specification
Hi-Rel NPN bipolar transistor 60 V, 50 ma Features Datasheet - production data 3 1 2 TO-18 1 2 3 3 4 1 2 LCC-3 UB Pin 4 in UB is connected to the metallic lid. Figure 1. Internal schematic diagram Parameter
BDX53B - BDX53C BDX54B - BDX54C
BDX53B - BDX53C BDX54B - BDX54C Complementary power Darlington transistors Features Good h FE linearity High f T frequency Monolithic Darlington configuration with integrated antiparallel collector-emitter
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET
STP55NF03L STB55NF03L STB55NF03L-1 N-CHANNEL 30V - 0.01 Ω - 55A TO-220/D 2 PAK/I 2 PAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STP55NF03L STB55NF03L STB55NF03L-1 30 V 30 V 30 V
STB High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed Through hole TO-262 (I 2 PAK) power
STD12NF06L N-CHANNEL 60V Ω - 12A IPAK/DPAK STripFET II POWER MOSFET
N-CHANNEL 60V - 0.08 Ω - 12A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V < 0.1 Ω 12 A TYPICAL R DS (on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY LOW GATE CHARGE LOW THRESHOLD DRIVE THROUGH-HOLE
STL128D. High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Very high switching speed Integrated antiparallel collector-emitter diode TAB Applications
SGSD100 SGSD200. Complementary power Darlington transistors. Features. Applications. Description
SGSD100 SGSD200 Complementary power Darlington transistors Features Complementary NPN - PNP transistors Monolithic Darlington configuration Applications Audio power amplifier DC-AC converter Easy driver
High voltage NPN Power transistor for standard definition CRT display. R BE =60Ω typ. Order code Marking Package Packing
High voltage NPN Power transistor for standard definition CRT display Features State-of-the-art technology: Diffused collector enhanced generation Stable performance versus operating temperature variation
BD235 BD237. Low voltage NPN power transistors. Features. Applications. Description. Low saturation voltage NPN transistors
BD235 BD237 Low voltage NPN power transistors Features Low saturation voltage NPN transistors Applications Audio, power linear and switching applications Description The devices are manufactured in Planar
MD2009DFX. High voltage NPN power transistor for CRT TV. Features. Application. Description
High voltage NPN power transistor for CRT TV Features State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement
-55 to 175 C T j ( ) Pulse width limited by safe operating area.
N-CHANNEL 60V - 0.020 Ω - 28A IPAK/DPAK STripFET II POWER MOSFET TYPE V DSS R DS(on) I D 60 V
Very high voltage NPN power transistor for high definition and slim CRT display. Part number Marking Package Packaging HD1750JL HD1750JL TO-264 Tube
HD1750JL Very high voltage NPN power transistor for high definition and slim CRT display Features PRELIMINARY DATA State-of-the-art technology: diffused collector enhanced generation EHVS1 Wider range
Obsolete Product(s) - Obsolete Product(s)
P-CHANNEL 20V - 0.065Ω - 5ASOT23-6L 2.5V-DRIVE STripFET II POWER MOSFET TYPE V DSS R DS(on) I D STT5PF20V 20 V < 0.080 Ω (@4.5V)
ST High voltage fast-switching NPN power transistor. Features. Applications. Description
High voltage fast-switching NPN power transistor Features DC current gain classification High voltage capability Low spread of dynamic parameters ery high switching speed TAB Applications Electronic ballast
TIP2955 TIP3055. Complementary power transistors. Features. Applications. Description
TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier Description The devices
BD533 BD535 BD537 BD534 BD536
BD533 BD535 BD537 BD534 BD536 Complementary power transistors Features. BD533, BD535, and BD537 are NPN transistors Description The devices are manufactured in Planar technology with Base Island layout.
BZW06-5V8/376 BZW06-5V8B/376B
BZW06-5V8/376 BZW06-5V8B/376B TRANSIL TM FEATURES PEAK PULSE POWER : 600 W (10/1000µs) STAND-OFF VOLTAGE RANGE : From 5.8V to 376 V UNI AND BIDIRECTIONAL TYPES LOW CLAMPING FACTOR FAST RESPONSE TIME UL