MMBT5087L. Low Noise Transistor. PNP Silicon

Transcription

1 Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 5 Vdc 1 BASE COLLECTOR 2 EMITTER CollectorBase Voltage V CBO 5 Vdc EmitterBase Voltage V EBO. Vdc Collector Current Continuous I C 5 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR5 Board, (Note 1) T A = 25 C Derate above 25 C P D mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 556 C/W Total Device Dissipation Alumina Substrate, (Note 2) T A = 25 C Derate above 25 C P D 2.4 mw mw/ C Thermal Resistance, JunctiontoAmbient R JA 417 C/W Junction and Storage Temperature T J, T stg 55 to +15 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR5 = x.75 x.62 in. 2. Alumina =.4 x. x.24 in. 99.5% alumina. 1 2 SOT2 (TO26) CASE 18 STYLE 6 MARKING DIAGRAM 1 2Q M 2Q = Device Code M = Date Code* = PbFree Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT587LT1G, NSVMMBT587LT1G MMBT587LTG, NSVMMBT587LTG SOT2 (PbFree) SOT2 (PbFree), / Tape & Reel, / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD811/D. Semiconductor Components Industries, LLC, 1994 October, 216 Rev. 6 1 Publication Order Number: MMBT587LT1/D

2 ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Max Unit CollectorEmitter Breakdown Voltage (I C = madc, I B = ) CollectorBase Breakdown Voltage (I C = Adc, I E = ) V (BR)CEO 5 Vdc V (BR)CBO 5 Vdc Collector Cutoff Current (V CB = Vdc, I E = ) (V CB = 5 Vdc, I E = ) I CBO 5 nadc ON CHARACTERISTICS DC Current Gain (I C = Adc, V CE = 5. Vdc) (I C = madc, V CE = 5. Vdc) (I C = madc, V CE = 5. Vdc) h FE CollectorEmitter Saturation Voltage (I C = madc, I B = madc) BaseEmitter Saturation Voltage (I C = madc, I B = madc) V CE(sat). Vdc V BE(sat).85 Vdc SMALLSIGNAL CHARACTERISTICS CurrentGain Bandwidth Product (I C = Adc, V CE = 5. Vdc, f = 2 MHz) Output Capacitance (V CB = 5. Vdc, I E =, f = MHz) SmallSignal Current Gain (I C = madc, V CE = 5. Vdc, f = khz) f T 4 MHz C obo 4. pf h fe 25 9 Noise Figure (I C = 2 madc, V CE = 5. Vdc, R S = k, f = khz) (I C = Adc, V CE = 5. Vdc, R S =. k, f = khz) NF db Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL NOISE CHARACTERISTICS (V CE = 5. Vdc, T A = 25 C) en, NOISE VOLTAGE (nv) ma I C = A A A A 2 5 k 2. k 5. k k f, FREQUENCY (Hz) Figure 1. Noise Voltage BANDWIDTH = Hz R S In, NOISE CURRENT (pa) I C = ma A A A A k 2. k 5. k k f, FREQUENCY (Hz) Figure 2. Noise Current BANDWIDTH = Hz R S 2

3 NOISE FIGURE CONTOURS (V CE = 5. Vdc, T A = 25 C) RS, SOURCE RESISTANCE (OHMS) M k k k 5 k 2 k k 5. k 2. k k I C, COLLECTOR CURRENT ( A) BANDWIDTH = Hz RS, SOURCE RESISTANCE (OHMS) M k k k 5 k I C, COLLECTOR CURRENT ( A) BANDWIDTH = Hz 2 k.5 db k.5 db db 5. k 2. k db 2. db k 2. db. db. db 5. db 5. db k k RS, SOURCE RESISTANCE (OHMS) M k k k 5 k 2 k k 5. k 2. k k Figure. Narrow Band, Hz.5 db I C, COLLECTOR CURRENT ( A) Figure 5. Wideband Hz to 15.7 khz db 2. db. db 5. db k Figure 4. Narrow Band, khz Noise Figure is Defined as: NF 2 log e n 2 4KTRS In 2 RS KTRS e n = Noise Voltage of the Transistor referred to the input. (Figure ) I n = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman s Constant (1.8 x 2 j/ K) T = Temperature of the Source Resistance ( K) R S = Source Resistance (Ohms)

4 TYPICAL STATIC CHARACTERISTICS VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I B, BASE CURRENT (ma) T A = 25 C I C = ma ma 5 ma ma IC, COLLECTOR CURRENT (ma) T A = 25 C PULSE WIDTH = s DUTY CYCLE 2.% 5 A I B = 4 A A 25 A V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A 15 A A 5 A Figure 6. Collector Saturation Region Figure 7. Collector Characteristics V, VOLTAGE (VOLTS) V I C /I B = V V CE = V 1.6 VB for V BE V I C /I B = V, TEMPERATURE COEFFICIENTS (mv/ C) θ *APPLIES for I C /I B h FE /2 * VC for V CE(sat) 25 C to 125 C -55 C to 25 C 25 C to 125 C -55 C to 25 C Figure 8. On Voltages Figure 9. Temperature Coefficients 4

5 TYPICAL DYNAMIC CHARACTERISTICS t, TIME (ns) t V BE(off) =.5 V t r V CC =. V I C /I B = t, TIME (ns) t s t f V CC = -. V I C /I B = I B1 = I B Figure. TurnOn Time Figure 11. TurnOff Time f, T CURRENT-GAIN BANDWIDTH PRODUCT (MHz) V CE = 2 V 5. V C, CAPACITANCE (pf) C ib C ob V R, REVERSE VOLTAGE (VOLTS) Figure 12. CurrentGain Bandwidth Product Figure 1. Capacitance 5

6 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = SINGLE PULSE k 2. k 5. k k 2 k 5 k k t, TIME (ms) P (pk) FIGURE 16 t 1 t2 DUTY CYCLE, D = t 1 /t 2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 (SEE AN569/D) Z JA(t) = r(t) R JA T J(pk) T A = P (pk) Z JA(t) Figure 14. Thermal Response IC, COLLECTOR CURRENT (na) V CC = V -2 I CEO I CBO AND I V BE(off) =. V T J, JUNCTION TEMPERATURE ( C) Figure 15. Typical Collector Leakage Current DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 16. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 14 was calculated for various duty cycles. To find Z JA(t), multiply the value obtained from Figure 14 by the steady state value R JA. Example: Dissipating 2. watts peak under the following conditions: t 1 = ms, t 2 = 5. ms (D = ) Using Figure 14 at a pulse width of ms and D =, the reading of r(t) is 2. The peak rise in junction temperature is therefore T = r(t) x P (pk) x R JA = 2 x 2. x = 88 C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at 6

7 PACKAGE DIMENSIONS SOT2 (TO26) CASE 188 ISSUE AR A E A1 D 1 2 e TOP VIEW SIDE VIEW HE L X b L1 VIEW C SEE VIEW C c END VIEW T 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, CONTROLLING DIMENSION: MILLIMETERS.. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF THE BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A A b c D E e L L H E T STYLE 6: PIN 1. BASE 2. EMITTER. COLLECTOR RECOMMENDED SOLDERING FOOTPRINT* 2.9 X.9 X.8.95 PITCH DIMENSIONS: MILLIMETERS *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 7 MMBT587LT1/D