General Purpose Transistor

Transcription

1 General Purpose Transistor Pb Free Package May be Available. The G Suffix Denotes a Pb Free Lead Finish We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q Qualified and PPAP Capable. ORDERING INFORMATION Device Marking Shipping LMBT394LTG S-LMBT394LTG 3 LMBT394LTG AM 3/Tape & Reel S-LMBT394LTG LMBT394LT3G AM /Tape & Reel S-LMBT394LT3G MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 4 Vdc Collector Base Voltage V CBO 6 Vdc Emitter Base Voltage V EBO 6. Vdc Collector Current Continuous I C madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR Board, () P D mw T A = C Derate above C.8 mw/ C Thermal Resistance, Junction to Ambient R θja 6 C/W Total Device Dissipation P D 3 mw Alumina Substrate, () T A = C Derate above C.4 mw/ C Thermal Resistance, Junction to Ambient R θja 4 C/W Junction and Storage Temperature T J,T stg to + C BASE SOT 3 3 COLLECTOR EMITTER ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted.) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage(3) V (BR)CEO 4 Vdc (I C =. madc) Collector Base Breakdown Voltage V (BR)CBO 6 Vdc (I C = µadc) Emitter Base Breakdown Voltage V (BR)EBO 6. Vdc (I E = µadc) Base Cutoff Current I BL nadc ( V CE= 3 Vdc, V EB = 3. Vdc, ) Collector Cutoff Current I CEX nadc ( V CE = 3Vdc, V EB = 3.Vdc ). FR =. x. x.6 in.. Alumina =.4 x.3 x.4 in. 99.% alumina. 3. Pulse Test: Pulse Width <3 µs, Duty Cycle <.%. Rev.O /

2 LMBT394LTG,S-LMBT394LTG ELECTRICAL CHARACTERISTICS (T A = C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS (3) DC Current Gain() h FE (I C =. madc, V CE =. Vdc) 4 (I C =. madc, V CE =. Vdc) (I C = madc, V CE =. Vdc) 3 (I C = madc, V CE =.Vdc) 6 (I C = madc, V CE =. Vdc) 3 Collector Emitter Saturation Voltage V CE(sat) Vdc (I C = madc, I B =. madc)(3). (I C = madc, I B =.madc).3 Base Emitter Saturation Voltage(3) V BE(sat) Vdc (I C = madc, I B =.madc).6.8 (I C = madc, I B =.madc ).9 SMALL SIGNAL CHARACTERISTICS Current Gain Bandwidth Product (I C = madc, V CE= Vdc, f = MHz) Output Capacitance (V CB =.Vdc, I E =, f =. MHz) Input Capacitance (VEB =.Vdc, I C =, f =. MHz) Input Impedancen (V CE = Vdc, I C =.madc, f =. khz) Voltage Feedback Ratio (V CE = Vdc, I C =. madc, f =. khz) Small Signal Current Gain (V CE = Vdc, I C =. madc, f =. khz) Output Admittance (V CE = Vdc, I C =. madc, f =. khz) Noise Figure (V CE =. Vdc, I C = µadc, R S =. k Ω, f =. khz) f T 3 MHz C obo 4. pf C ibo 8. pf h ie. k h re. 8. X 4 h fe 4 h oe. 4 mhos NF. db SWITCHING CHARACTERISTICS Delay Time (V CC = 3. Vdc,V BE =.Vdc t d 3 Rise Time I C = madc, I B =.madc) t r 3 Storage Time (V CC = 3.Vdc, t s Fall Time I C = madc,i B = I B =. madc) t f ns ns 3. Pulse Test: Pulse Width <3 µs, Duty Cycle <.%. Rev.O /

3 LMBT394LTG,S-LMBT394LTG DUTY CYCLE = % 3 ns +.9 V +3 V < t < s DUTY CYCLE = % t +.9 V +3 V -. V < ns k C S < 4 pf* k N96 C S < 4 pf* - 9. V * Total shunt capacitance of test jig and connectors < ns Figure. Delay and Rise Time Equivalent Test Circuit Figure. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS T J = C T J = C CAPACITANCE (pf) C ibo C obo REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Capacitance Q, CHARGE (pc) 3 3. V CC = 4 V I C /I B = Q T Figure 4. Charge Data Q A 3 I C /I B = 3 V CC = 4 V I C /I B = TIME (ns) 3 V t V OB = V. V Figure. Turn On Time t V CC = 3. V 4 V t, RISE TIME (ns) r Figure 6. Rise Time Rev.O 3/

4 f LESHAN RADIO COMPANY, LTD. LMBT394LTG,S-LMBT394LTG t, STORAGE TIME (ns) s 3 3 I C /I B = I C /I B = t s = t s - / 8 t f I B = I B I C /I B = I C /I B = t, FALL TIME (ns) 3 3 I C /I B = I C /I B = V CC = 4 V I B = I B Figure. Storage Time Figure 8. Fall Time TYPICAL AUDIO SMALL SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (V CE =. Vdc, T A = C, Bandwidth =. Hz) NF, NOISE FIGURE (db) SOURCE RESISTANCE = I C =. ma SOURCE RESISTANCE = I C =. ma SOURCE RESISTANCE =. k I C = A NF, NOISE FIGURE (db) f =. khz I C =. ma I C =. ma I C = A I C = A SOURCE RESISTANCE = I C = A f, FREQUENCY (khz) R S, SOURCE RESISTANCE (k OHMS) 3 Figure 9. h PARAMETERS (V CE = Vdc, f =. khz, T A = C) Figure. h fe, CURRENT GAIN Figure. Current Gain h oe, OUTPUT ADMITTANCE ( mhos) Figure. Output Admittance Rev.O 4/

5 LMBT394LTG,S-LMBT394LTG h ie, INPUT IMPEDANCE (k OHMS).... h, VOLTAGE FEEDBACK RATIO (X -4 re ) Figure 3. Input Impedance Figure 4. Voltage Feedback Ratio TYPICAL STATIC CHARACTERISTICS T J = + C V CE =. V h FE, DC CURRENT GAIN + C - C.. Figure. DC Current Gain V CE, COLLECTOR EMITTER VOLTAGE (VOLTS) I C =. ma.3.. T J = C ma 3 ma ma I B, BASE CURRENT (ma) Figure 6. Collector Saturation Region Rev.O /

6 LMBT394LTG,S-LMBT394LTG V CE(sat), COLLECTOR EMITTER SATURATION VOLTAGE (V) V BE(on), BASE EMITTER VOLTAGE (V) f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) I C, COLLECTOR CURRENT (A) Figure. Collector Emitter Saturation Voltage vs. Collector Current.. C C I C /I B = V CE = V C.... I C, COLLECTOR CURRENT (A) Figure 9. Base Emitter Voltage vs. Collector Current V CE = V T A = C C C Figure. Current Gain Bandwidth vs. Collector Current C V BE(sat), BASE EMITTER SATURATION VOLTAGE (V) COEFFICIENT (mv/ C) IC (A) I C /I B = C C C... I C, COLLECTOR CURRENT (A) Figure 8. Base Emitter Saturation Voltage vs. Collector Current VC FOR V CE(sat) VB FOR V BE(sat) Single Pulse T A = C... + C TO + C - C TO + C - C TO + C + C TO + C Figure. Temperature Coefficients Thermal Limit s ms V CE (Vdc) Figure. Safe Operating Area ms ms Rev.O 6/

7 LMBT394LTG,S-LMBT394LTG SOT-3 V A L 3 G B S NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98.. CONTROLLING DIMENSION: INCH. DIM INCHES MILLIMETERS MIN MAX MIN MAX A B C D...3. G C H D H K J J K L S V PIN. BASE. EMITTER 3. COLLECTOR inches mm Rev.O /