TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS

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1 TIP7G, TIP8G, TIP5G High oltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 to (Min) CEO(sus) 1 A Rated Collector Current Popular TO 22 Plastic Package These Devices are Pb Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol TIP7 TIP8 TIP5 Unit Collector Emitter oltage CEO 25 3 dc Collector Base oltage CB 35 5 dc Emitter Base oltage EB 5. dc Collector Current Continuous Peak I C 2. Adc Base Current I B.6 Adc Total Power T C = 25 C Derate above 25 C Total Power T C = 25 C Derate above 25 C Unclamped Inducting Load Energy (See Figure 8) P D.32 P D W W/ C W W/ C E 2 mj AMPERE POWER TRANSISTORS NPN SILICON 25 3 OLTS WATTS TO 22AB CASE 221A STYLE 1 TIPxx = Device Code xx = 7, 8, or 5 A = Assembly Location Y = Year WW = Work Week G = Pb Free Package MARKING DIAGRAM TIPxxG AYWW Operating and Storage Junction Temperature Range T J, T stg 65 to +15 C THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case R JC C/W ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Thermal Resistance, Junction to Ambient R JA 62.5 C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1 TIP7/D

2 TIP7G, TIP8G, TIP5G ÎÎ ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic ÎÎ Symbol Min Î Max Unit ÎÎ OFF CHARACTERISTICS Collector Emitter Sustaining oltage (Note 1) TIP7ÎÎ CEO(sus) ÎÎ (I C = 3 madc, I B = ) TIP8Î 25 3Î dc TIP5 ÎÎ Collector Cutoff Current I ( CE = 15 dc, I B = ) TIP7ÎÎ CEO madc ( CE = 2 dc, I B = ) TIP8 ( CE = 3 dc, I B Î Î = ) TIP5 ÎÎ Collector Cutoff Current I ( CE = 35 dc, BE = ) TIP7ÎÎ CES madc ÎÎ ( CE = dc, BE = ) TIP8Î Î ( CE = 5 dc, BE = ) TIP5 Emitter Cutoff Current I ( BE = 5. dc, I C ÎÎ EBO madc = ) ÎÎ ON CHARACTERISTICS (Note 1) Î DC Current Gain h FE ÎÎ (I C =.3 Adc, CE = 1 dc) Î (I C = Adc, CE = 1 dc) Î Collector Emitter Saturation oltage (I C = Adc, I B ÎÎ CE(sat) dc = Adc) Base Emitter On oltage (I C = Adc, CE = 1 dc) ÎÎ BE(on) Î 1.5 Î dc ÎÎ DYNAMIC CHARACTERISTICS Current Gain Bandwidth Product ÎÎ f T 1 Î (I C =.1 Adc, CE = 1 dc, f = 2. MHz) Î MHz Small Signal Current Gain h (I C = Adc, CE ÎÎ fe 25 Î = 1 dc, f = khz) 1. Pulse Test: Pulse width 3 s, Duty Cycle 2.%. ORDERING INFORMATION Device Package Shipping TIP7 TO 22 5 Units / Rail TIP7G TO 22 5 Units / Rail TIP8 TO 22 5 Units / Rail TIP8G TO 22 5 Units / Rail TIP9 TO 22 5 Units / Rail TIP9G TO 22 5 Units / Rail TIP5 TO 22 5 Units / Rail TIP5G TO 22 5 Units / Rail 2

3 TIP7G, TIP8G, TIP5G T A T C PD, POWER DISSIPATION (WATTS) T A T C T C, CASE TEMPERATURE ( C) Figure 1. Power Derating 16 TURN-ON PULSE APPROX +11 in EB(off) t 1 APPROX +11 in t 2 t 3 TURN-OFF PULSE CC t 1 7. ns 1 < t 2 < 5 s t 3 < 15 ns DUTY CYCLE 2.% APPROX - 9. R B and R C ARIED TO OBTAIN DESIRED CURRENT LEELS. in R C R B C jd << C eb -. Figure 2. Switching Time Equivalent Circuit SCOPE t, TIME ( s) μ t r t d Figure 3. Turn On Time T J = 25 C CC = 2 I C /I B = 5. r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED D = SINGLE PULSE Z JC(t) = r(t) R JC R JC = C/W MAX D CURES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t 1 T J(pk) - T C = P (pk) Z JC(t) t, TIME (ms) Figure. Thermal Response P (pk) t 1 t 2 DUTY CYCLE, D = t 1 /t 2 k 3

4 TIP7G, TIP8G, TIP5G T C 25 C ms SECONDARY BREAKDOWN LIMITED THERMALLY 25 C BONDING WIRE LIMITED CURES APPLY BELOW RATED CEO CE, COLLECTOR-EMITTER OLTAGE (OLTS) dc TIP7 TIP8 TIP5 1 s 5 s There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C CE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on T J(pk) = 15 C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 1% provided T J(pk) 15 C. T J(pk) may be calculated from the data in Figure. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure 5. Active Region Safe Operating Area t, TIME ( s) μ t s t f Figure 6. Turn Off Time T J = 25 C CC = 2 I C /I B = 5. 2., TEMPERATURE COEFFICIENTS (m/ C) θ *APPLIES FOR I C /I B h FE /5 C FOR CE(sat) + 25 C to + 15 C + 25 C to + 15 C B FOR BE - 55 C to + 25 C C to + 25 C Figure 7. Temperature Coefficients INPUT 5 5 MJE171 BB1 = 1 R BB1 = 15 R BB2 = 1 BB2 = CE MONITOR TUT R S =.1 1 mh CC = 2 I C MONITOR Note A: Input pulse width is increased until I CM =.63 A. INPUT OLTAGE COLLECTOR CURRENT COLLECTOR OLTAGE A CER 1 CE(sat) t w 3 ms (SEE NOTE A) 1 ms Figure 8. Inductive Load Switching

5 TIP7G, TIP8G, TIP5G hfe, DC CURRENT GAIN T J = 15 C 25 C - 55 C CE = Figure 9. DC Current Gain, OLTAGE (OLTS) I C /I B = 5. CE = I C /I B = Figure 1. On oltages 2. 5

6 PACKAGE DIMENSIONS TO 22AB CASE 221A 9 ISSUE AF H Q Z L G B N D A K F T U S R C T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y1.5M, CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. INCHES MILLIMETERS DIM MIN MAX MIN MAX A B C D F G H J K L N Q R S T U Z STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER. COLLECTOR 6