E C B E. TO-92 SOT-23 Mark: 2X. TA = 25 C unless otherwise noted. Symbol Parameter Value Units

Transcription

1 2N4401 MMBT4401 C 2N4401 / MMBT4401 E C B E TO-92 SOT-23 Mark: 2X B NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 ma. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units V CEO Collector-Emitter Voltage 40 V V CBO Collector-Base Voltage 60 V V EBO Emitter-Base Voltage 6.0 V I C Collector Current - Continuous 600 ma T J, T stg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25 C unless otherwise noted Symbol Characteristic Max Units 2N4401 *MMBT4401 P D Total Device Dissipation Derate above 25 C mw mw/ C R θjc Thermal Resistance, Junction to Case 83.3 C/W R θja Thermal Resistance, Junction to Ambient C/W *Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." 2001 Fairchild Semiconductor Corporation 2N4401/MMBT4401, Rev A

2 Electrical Characteristics TA = 25 C unless otherwise noted NPN General Purpose Amplifier (continued) Symbol Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V (BR)CEO Collector-Emitter Breakdown Voltage* I C = ma, I B = 0 40 V V (BR)CBO Collector-Base Breakdown Voltage I C = 0.1 ma, I E = 0 60 V V (BR)EBO Emitter-Base Breakdown Voltage I E = 0.1 ma, I C = V I BL Base Cutoff Current V CE = 35 V, V EB = V 0.1 µa I CEX Collector Cutoff Current V CE = 35 V, V EB = V 0.1 µa 2N4401 / MMBT4401 ON CHARACTERISTICS* h FE DC Current Gain I C = 0.1 ma, V CE = V I C = ma, V CE = V I C = 10 ma, V CE = V I C = 150 ma, V CE = V I C = 500 ma, V CE = 2.0 V V CE(sat) Collector-Emitter Saturation Voltage I C = 150 ma, I B = 15 ma I C = 500 ma, I B = 50 ma V BE(sat) Base-Emitter Saturation Voltage I C = 150 ma, I B = 15 ma I C = 500 ma, I B = 50 ma V V V V SMALL SIGNAL CHARACTERISTICS f T Current Gain - Bandwidth Product I C = 20 ma, V CE = 10 V, f = MHz C cb Collector-Base Capacitance V CB = 5.0 V, I E = 0, f = 140 khz C eb Emitter-Base Capacitance V BE = 0.5 V, I C = 0, f = 140 khz h ie Input Impedance I C = ma, V CE = 10 V, f = khz h re Voltage Feedback Ratio I C = ma, V CE = 10 V, f = khz h fe Small-Signal Current Gain I C = ma, V CE = 10 V, f = khz h oe Output Admittance I C = ma, V CE = 10 V, f = khz 250 MHz 6.5 pf 30 pf 15 kω x µmhos 3 SWITCHING CHARACTERISTICS t d Delay Time V CC = 30 V, V EB = 2 V, 15 ns t r Rise Time I C = 150 ma, I B1 = 15 ma 20 ns t s Storage Time V CC = 30 V, I C = 150 ma 225 ns t f Fall Time I B1 = I B2 = 15 ma 30 ns *Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%

3 Typical Characteristics h - TYPICAL PULSED CURRENT GAIN FE Typical Pulsed Current Gain vs Collector Current 125 C 25 C - 40 C I - COLLECTOR CURRENT (ma) C V = 5V CE V - COLLECTOR-EMITTER VOLTAGE (V) CESAT NPN General Purpose Amplifier Collector-Emitter Saturation Voltage vs Collector Current β = C I - COLLECTOR CURRENT (ma) C 125 C - 40 C (continued) 2N4401 / MMBT4401 V - BASE-EMITTER VOLTAGE (V) BESAT Base-Emitter Saturation Voltage vs Collector Current β = C I - COLLECTOR CURRENT (ma) C 25 C 125 C V - BASE-EMITTER ON VOLTAGE (V) BE (ON) Base-Emitter ON Voltage vs Collector Current V CE = 5V - 40 C I - COLLECTOR CURRENT (ma) C 25 C 125 C I - COLLECTOR CURRENT (na) CBO Collector-Cutoff Current vs Ambient Temperature V = 40V CB T - AMBIENT TEMPERATURE ( C) A CAPACITANCE (pf) Emitter Transition and Output Capacitance vs Reverse Bias Voltage C ob C te f = 1 MHz REVERSE BIAS VOLTAGE (V)

4 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) Plastic Medium-Power Complementary Silicon Transistors Designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 I C = Adc CollectorEmitter Sustaining 30 madc V CEO(sus) = 60 Vdc (Min) TIP110, TIP115 = 80 Vdc (Min) TIP111, TIP116 = Vdc (Min) TIP112, TIP117 Low CollectorEmitter Saturation Voltage V CE(sat) = 2.5 Vdc I C = 2.0 Adc Monolithic Construction with Builtin BaseEmitter Shunt Resistors PbFree Packages are Available* DARLINGTON 2 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 6080 VOLTS, 50 WATTS TO220AB CASE 221A STYLE 1 STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR MARKING DIAGRAM TIP11xG AYWW TIP11x = Device Code x = 0, 1, 2, 5, 6, or 7 A = Assembly Location Y = Year WW = Work Week G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information on page 3 of this data sheet. *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2014 November, 2014 Rev. 8 1 Publication Order Number: TIP110/D

5 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) MAXIMUM RATINGS Rating Symbol TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 CollectorEmitter Voltage V CEO Vdc CollectorBase Voltage V CB Vdc EmitterBase Voltage V EB 5.0 Vdc Collector Current Continuous Peak I C Base Current I B 50 madc Total Power T C = 25 C Derate above 25 C Total Power T A = 25 C Derate above 25 C P D 50 P D Unclamped Inductive Load Energy Figure 13 E 25 mj Operating and Storage Junction T J, T stg 65 to C THERMAL CHARACTERISTICS Unit Adc W W/ C W W/ C Characteristics Symbol Max Unit Thermal Resistance, JunctiontoCase R JC 2.5 C/W Thermal Resistance, JunctiontoAmbient R JA 62.5 C/W Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 1) (I C = 30 madc, I B = 0) TIP110, TIP115 TIP111, TIP116 TIP112, TIP117 Collector Cutoff Current (V CE = 30 Vdc, I B = 0) TIP110, TIP115 (V CE = 40 Vdc, I B = 0) TIP111, TIP116 (V CE = 50 Vdc, I B = 0) TIP112,TIP117 Collector Cutoff Current (V CB = 60 Vdc, I E = 0) TIP110, TIP115 (V CB = 80 Vdc, I E = 0) TIP111, TIP116 (V CB = Vdc, I E = 0) TIP112, TIP117 Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0) V CEO(sus) I CEO I CBO Vdc madc madc I EBO 2.0 madc ON CHARACTERISTICS (Note 1) DC Current Gain (I C = Adc, V CE = 4.0 Vdc) (I C = 2.0 Adc, V CE = 4.0 Vdc) h FE CollectorEmitter Saturation Voltage (I C = 2.0 Adc, I B = 8.0 madc) V CE(sat) 2.5 Vdc BaseEmitter On Voltage (I C = 2.0 Adc, V CE = 4.0 Vdc) V BE(on) 2.8 Vdc DYNAMIC CHARACTERISTICS SmallSignal Current Gain (I C = 0.75 Adc, V CE = 10 Vdc, f = MHz) h fe 25 Output Capacitance (V CB = 10 Vdc, I E = 0, f = 0.1 MHz) TIP115, TIP116, TIP117 TIP110, TIP111, TIP112 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. C ob 200 pf 2

6 TIP110, TIP111, TIP112 (NPN); TIP115, TIP116, TIP117 (PNP) NPN TIP110, 111, 112 PNP TIP115, 116, k 4.0 k T J = 125 C V CE = 3.0 V 6.0 k 4.0 k T J = 125 C V CE = 3.0 V hfe, DC CURRENT GAIN 3.0 k 2.0 k k C - 55 C hfe, DC CURRENT GAIN 3.0 k 2.0 k k C - 55 C I C, COLLECTOR CURRENT (AMP) I C, COLLECTOR CURRENT (AMP) Figure 9. DC Current Gain V CE, COLLECTOR-EMITTER VOLTAGE (VOLTS) I C = 0.5 A A 2.0 A 4.0 A T J = 25 C I B, BASE CURRENT (ma) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 10. Collector Saturation Region I C = 0.5 A A 2.0 A 4.0 A T J = 25 C I B, BASE CURRENT (ma) 2.2 T J = 25 C 2.2 T J = 25 C V, VOLTAGE (VOLTS) 1.4 V I C /I B = 250 V I C /I B = 250 V V CE = 3.0 V V, VOLTAGE (VOLTS) 1.4 V I C /I B = 250 V I C /I B = 250 V V CE = 3.0 V I C, COLLECTOR CURRENT (AMP) I C, COLLECTOR CURRENT (AMP) Figure 11. On Voltages 6

7 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) Complementary Silicon Plastic Power Transistors Designed for use in general purpose amplifier and switching applications. Features CollectorEmitter Saturation Voltage V CE(sat) = 1.2 Vdc I C = 3.0 Adc CollectorEmitter Sustaining Voltage V CEO(sus) = 40 Vdc (Min) TIP31, TIP32 = 60 Vdc (Min) TIP31A, TIP32A = 80 Vdc (Min) TIP31B, TIP32B = Vdc (Min) TIP31C, TIP32C High Current Gain Bandwidth Product f T = 3.0 MHz I C = 500 madc Compact TO220 AB Package PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B V CEO Vdc TIP31C, TIP32C CollectorBase Voltage TIP31, TIP32 TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C V CB Vdc EmitterBase Voltage V EB 5.0 Vdc Collector Current Continuous I C 3.0 Adc Peak 5.0 Base Current I B Adc Total Power T C = 25 C Derate above 25 C Total Power T A = 25 C Derate above 25 C P D P D W W/ C W W/ C Unclamped Inductive Load Energy (Note 1) E 32 mj Operating and Storage Junction T J, T stg 65 to C Temperature Range +150 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. I C = 1.8 A, L = 20 mh, P.R.F. = 10 Hz, V CC = 10 V, R BE = *For additional information on our PbFree strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON VOLTS, 40 WATTS TO220AB CASE 221A STYLE 1 PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR TIP3xx = Device Code xx = 1, 1A, 1B, 1C, 2, 2A, 2B, 2C, A = Assembly Location Y = Year WW = Work Week G PbFree Package MARKING DIAGRAM TIP3xxG AYWW ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Semiconductor Components Industries, LLC, 2011 September, 2011 Rev Publication Order Number: TIP31A/D

8 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, JunctiontoAmbient R JA 62.5 C/W Thermal Resistance, JunctiontoCase R JC C/W ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS CollectorEmitter Sustaining Voltage (Note 2) TIP31, TIP32 V CEO(sus) 40 Vdc (I C = 30 madc, I B = 0) TIP31A, TIP32A TIP31B, TIP32B TIP31C, TIP32C Collector Cutoff Current (V CE = 30 Vdc, I B = 0) TIP31, TIP32, TIP31A, TIP32A I CEO 0.3 madc Collector Cutoff Current (V CE = 60 Vdc, I B = 0) TIP31B, TIP31C, TIP32B, TIP32C 0.3 Collector Cutoff Current (V CE = 40 Vdc, V EB = 0) TIP31, TIP32 (V CE = 60 Vdc, V EB = 0) TIP31A, TIP32A (V CE = 80 Vdc, V EB = 0) TIP31B, TIP32B (V CE = Vdc, V EB = 0) TIP31C, TIP32C Emitter Cutoff Current (V BE = 5.0 Vdc, I C = 0) I EBO madc ON CHARACTERISTICS (Note 2) DC Current Gain (I C = Adc, V CE = 4.0 Vdc) h FE 25 DC Current Gain (I C = 3.0 Adc, V CE = 4.0 Vdc) CollectorEmitter Saturation Voltage (I C = 3.0 Adc, I B = 375 madc) V CE(sat) 1.2 Vdc BaseEmitter On Voltage (I C = 3.0 Adc, V CE = 4.0 Vdc) V BE(on) 1.8 Vdc DYNAMIC CHARACTERISTICS CurrentGain Bandwidth Product (I C = 500 madc, V CE = 10 Vdc, f test = MHz) f T 3.0 MHz SmallSignal Current Gain (I C = 0.5 Adc, V CE = 10 Vdc, f = khz) h fe Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. I CES Adc 2

9 TIP31, TIP31A, TIP31B, TIP31C, (NPN), TIP32, TIP32A, TIP32B, TIP32C, (PNP) hfe, DC CURRENT GAIN T J = 150 C V CE = 2.0 V 25 C - 55 C I C, COLLECTOR CURRENT (AMP) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) T J = 25 C I C = 0.3 A A 3.0 A I B, BASE CURRENT (ma) Figure 9. DC Current Gain Figure 10. Collector Saturation Region V, VOLTAGE (VOLTS) 1.4 T J = 25 C V I C /I B = 10 V V CE = 2.0 V 0.2 V I C /I B = I C, COLLECTOR CURRENT (AMPS) Figure 11. On Voltages V, TEMPERATURE COEFFICIENTS (mv/ C) θ *APPLIES FOR I C /I B h FE /2 T J = - 65 C TO C * VC FOR V CE(sat) VB FOR V BE I C, COLLECTOR CURRENT (AMP) Figure 12. Temperature Coefficients, COLLECTOR CURRENT ( A) μ IC V CE = 30 V T J = 150 C C REVERSE FORWARD 25 C I CES R BE, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) I C I CES I C = 2 x I CES I C = 10 x I CES (TYPICAL I CES VALUES OBTAINED FROM FIGURE 12) V CE = 30 V V BE, BASEEMITTER VOLTAGE (VOLTS) T J, JUNCTION TEMPERATURE ( C) Figure 13. Collector CutOff Region Figure 14. Effects of BaseEmitter Resistance 6

10 March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. BS170 D TO-92 SOT-23 G G S Absolute Maximum Ratings T A = 25 C unless otherwise noted D Features MMBF170 High density cell design for low R DS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. Symbol Parameter BS170 MMBF170 Units V DSS Drain-Source Voltage 60 V V DGR Drain-Gate Voltage (R GS 1MΩ) 60 V V GSS Gate-Source Voltage ± 20 V I D Drain Current - Continuous Pulsed ma T J, T STG Operating and Storage Temperature Range - 55 to 150 C T L Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds 300 C S BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor Thermal Characteristics T A = 25 C unless otherwise noted Symbol Parameter BS170 MMBF170 Units P D Maximum Power Dissipation Derate above 25 C mw mw/ C R θja Thermal Resistance, Junction to Ambient C/W 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 1

11 Electrical Characteristics T A =25 C unless otherwise noted Symbol Parameter Conditions Type Min. Typ. Max. Units OFF CHARACTERISTICS BV DSS Drain-Source Breakdown Voltage V GS = 0V, I D = μa All 60 V I DSS Zero Gate Voltage Drain Current V DS = 25V, V GS = 0V All 0.5 μa I GSSF Gate - Body Leakage, Forward V GS = 15V, V DS = 0V All 10 na ON CHARACTERISTICS (Notes 1) V GS(th) Gate Threshold Voltage V DS = V GS, I D = 1mA All V R DS(ON) Static Drain-Source On-Resistance V GS = 10V, I D = 200mA All Ω g FS Forward Transconductance V DS = 10V, I D = 200mA BS ms V DS 2 V DS(on), I D = 200mA MMBF Dynamic Characteristics C iss Input Capacitance V DS = 10V, V GS = 0V, All pf C oss Output Capacitance f = MHz All pf C rss Reverse Transfer Capacitance All 7 10 pf Switching Characteristics (Notes 1) t on Turn-On Time V DD = 25V, I D = 200mA, BS ns V GS = 10V, R GEN = 25Ω V DD = 25V, I D = 500mA, MMBF V GS = 10V, R GEN = 50Ω t off Turn-Off Time V DD = 25V, I D = 200mA, BS ns V GS = 10V, R GEN = 25Ω V DD = 25V, I D = 500mA, V GS = 10V, R GEN = 50Ω MMBF Note: 1. Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%. Ordering Information Part Number Package Package Type Lead Frame Pin array BS170 TO-92 BULK STRAIGHT D G S BS170_D26Z TO-92 Tape and Reel FORMING D G S BS170_D27Z TO-92 Tape and Reel FORMING D G S BS170_D74Z TO-92 AMMO FORMING D G S BS170_D75Z TO-92 AMMO FORMING D G S MMBF170 SOT-23 Tape and Reel BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 2

12 Typical Electrical Characteristics BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor 2010 Fairchild Semiconductor Corporation BS170 / MMBF170 Rev. E2 3