Dual Bias Resistor Transistors
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- Tabitha Daniels
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1 DATA SHEET SEMICONDUCTOR MUN5DW Series Dual Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the LMUN5DWT series, two BRT devices are housed in the SOT363 package which is ideal for lowpower surface mount applications where board space is at a premium.. Simplifies Circuit Design. Reduces Board Space. Reduces Component Count. Available in 8 mm, 7 inch/3 Unit Tape and Reel H 5 SC-88/SOT MAXIMUM RATINGS (T A = 25 C unless otherwise noted, common for Q and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 5 Vdc Collector-Emitter Voltage V CEO 5 Vdc Collector Current madc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation P D 87 (Note.) mw T A = 25 C Derate above 25 C 256 (Note 2.).5 (Note.) mw/ C 2. (Note 2.) Thermal Resistance R θja 67 (Note.) C/W Junction-to-Ambient 49 (Note 2.) Characteristic (Both Junctions Heated) Symbol Max Unit Total Device Dissipation T A = 25 C Derate above 25 C P D 25 (Note.) 385 (Note 2.) 2. (Note.) mw mw/ C 3. (Note 2.) Thermal Resistance R θja 493 (Note.) C/W Junction-to-Ambient 325 (Note 2.) Thermal Resistance R θjl 88 (Note.) C/W Junction-to-Lead 28 (Note 2.) Junction and Storage Temperature T J, T stg 55 to +5 C. Minimum Pad 2. x. inch Pad Q 2 R2 R R R2 2 3 XX Q MARKING DIAGRAM xx = Device Marking = (See Page 2) DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. REV
2 MUN5DW Series DEVICE MARKING AND RESISTOR VALUES Device Package Marking R (K) R 2(K) Shipping MUN5DW SOT363 A 3/Tape & Reel MUN52DW SOT363 B /Tape & Reel MUN53DW SOT363 C /Tape & Reel MUN54DW SOT363 D 47 3/Tape & Reel MUN55DW(Note 3.) SOT363 E 3/Tape & Reel MUN56DW (Note 3.) SOT363 F 4.7 3/Tape & Reel MUN53DW (Note 3.) SOT363 G.. 3/Tape & Reel MUN53DW (Note 3.) SOT363 H /Tape & Reel MUN532DW (Note 3.) SOT363 J /Tape & Reel MUN533DW (Note 3.) SOT363 K /Tape & Reel MUN534DW (Note 3.) SOT363 L /Tape & Reel MUN535DW (Note 3.) SOT363 M /Tape & Reel MUN536DW (Note 3.) SOT363 N 3/Tape & Reel MUN537DW (Note 3.) SOT363 P /Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2 ) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 5 V, I E = ) BO nadc Collector-Emitter Cutoff Current (V CE = 5 V, I B = ) EO 5 nadc Emitter-Base Cutoff Current MUN5 DW I EBO.5 madc (V EB = 6. V, = ) MUN52DW.2 MUN53DW. MUN54DW.2 MUN55DW.9 MUN56DW.9 MUN53DW 4.3 MUN53DW 2.3 MUN532DW.5 MUN533DW.8 MUN534DW.3 MUN535DW.2 MUN536DW.5 MUN537DW.3 Collector-Base Breakdown Voltage ( = µa, I E = ) V (BR)CBO 5 Vdc Collector-Emitter Breakdown Voltage(Note 4.)( = 2. ma,i B=) V (BR)CEO 5 Vdc ON CHARACTERISTICS (Note 4.) Collector-Emitter Saturation Voltage (= ma,i E=.3 ma) V CE(sat).25 Vdc (= ma, I B= 5mA) MUN53DW/MUN53DW (= ma, I B= ma) MUN55DW/LMUN56DW MUN532DW/MUN533DW/MUN534DW 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 3 µs, Duty Cycle < 2.% 2 REV
3 ELECTRICAL CHARACTERISTICS MUN5DW Series V ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 5.) DC Current Gain MUN5DW 35 6 (V CE = V, = 5. ma) MUN52DW MUN53DW MUN54DW MUN55DW MUN56DW MUN53DW MUN53DW MUN532DW MUN533DW MUN534DW MUN535DW MUN536DW MUN537DW Output Voltage (on) Vdc (V CC = 5. V, V B = 2.5 V, R L =. kω) (V CC = 5. V, V B = 3.5 V, R L =. kω) (V CC = 5. V, V B = 5.5 V, R L =. kω) (V CC = 5. V, V B = 4. V, R L =. kω) MUN5DW MUN52DW MUN54DW MUN55DW MUN56DW MUN53DW MUN53DW MUN532DW MUN533DW MUN534DW MUN535DW MUN53DW MUN536DW MUN537DW OL Output Voltage (off) (V CC = 5. V, V B =.5 V, R L =. kω) (V CC = 5. V, V B =.5 V, R L =. kω) MUN53DW (V CC = 5. V, V B =.25 V, R L =. kω) MUN55DW MUN56DW MUN53DW MUN533DW V OH 4.9 Vdc 3 REV
4 ELECTRICAL CHARACTERISTICS MUN5DW Series R /R ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted, common for Q and Q 2,) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS(Note 5.) Input Resistor MUN5DW MUN52DW MUN53DW MUN54DW MUN55DW MUN56DW MUN53DW MUN53DW MUN532DW MUN533DW MUN534DW MUN535DW MUN536DW MUN537DW R kω Resistor Ratio MUN5DW/MUN52DW MUN53DW/MUN536DW MUN54DW/MUN55DW MUN56DW/MUN53DW MUN53DW/MUN532DW.8..2 MUN533DW MUN534DW MUN535DW MUN537DW Pulse Test: Pulse Width < 3 ms, Duty Cycle < 2.% 3 P D, POWER DISSIPATION (mw) T A, AMBIENT TEMPERATURE ( C) Figure. Derating Curve 4 REV
5 MUN5DW Series TYPICAL ELECTRICAL CHARACTERISTICS MUN5 DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 2. V CE(sat) versus Figure 3. DC Current Gain 4 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current 5 REV
6 MUN5DW Series TYPICAL ELECTRICAL CHARACTERISTICS MUN5 2DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 7. V CE(sat) versus Figure 8. DC Current Gain 4 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure. Output Current versus Input voltage ,COLLECTOR CURRENT (ma) Figure. Input Voltage versus Output Current 6 REV
7 MUN5DW Series V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS). TYPICAL ELECTRICAL CHARACTERISTICS MUN53DW Figure 2. V CE(sat) versus Figure 3. DC Current Gain C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capacitance Figure 5. Output Current versus Input oltage Figure 6. Input Voltage versus Output Current 7 REV
8 MUN5DW Series TYPICAL ELECTRICAL CHARACTERISTICS MUN54DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 7. V CE(sat) versus Figure 8. DC Current Gain 4.5 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 2. Output Current versus Input oltage ,COLLECTOR CURRENT (ma) Figure 2. Input Voltage versus Output Current 8 REV
9 MUN5DW Series TYPICAL ELECTRICAL CHARACTERISTICS MUN5 5DW Figure 22. DC Current Gain TYPICAL ELECTRICAL CHARACTERISTICS MUN56DW Figure 23. DC Current Gain 9 REV
10 MUN5DW Series TYPICAL ELECTRICAL CHARACTERISTICS MUN536DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 24. Maximum Collector Voltage versus Collector Current Figure 25. DC Current Gain.2 C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 26. Output Capacitance Figure 27. Output Current versus Input oltage Figure 28. Input Voltage versus Output Current REV
11 MUN5DW Series TYPICAL ELECTRICAL CHARACTERISTICS MUN537DW V CE(sat), MAXIMUM COLLECTOR VOLTAGE (VOLTS) Figure 29. Maximum Collector Voltage versus Collector Current Figure 3. DC Current Gain C ob CAPACITANCE (pf) V R, REVERSE BIAS VOLTAGE (VOLTS) Figure 3. Output Capacitance Figure 32. Output Current versus Input oltage Figure 33. Input Voltage versus Output Current REV
12 PACKAGE OUTLINE & DIMENSIONS MUN5DW Series SC-88/SOT-363 A G NOTES:. DIMENSIONING AND TOLERANCING PER ANSI Y4.5M, CONTROLLING DIMENSION: INCH DIM INCHES MILLIMETERS MIN MAX MIN MAX A S B- B C D G.26 BSC.65 BSC D6 P L.2 (.8) M N B M H J K N.8 REF.2 REF J S C H K PIN. EMITTER 2 2. BASE 2 3. COLLECTOR 4.EMITTER 5. BASE 6.COLLECTOR 2.5 mm (min).4 mm (min).65 mm.65 mm.9 mm 2 REV
7X = Device Marking. Symbol
The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a baseemitter resistor. These digital transistors
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ZXTD4591E6 DUAL 60V NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: V CEO. = 1A; h FE =60V; I C = PNP: V CEO =
DUAL 6 NPN/PNP SILICON MEDIUM POWER TRANSISTORS SUMMARY NPN: CEO =6; I C = ; h FE =1-3 PNP: CEO =-6; I C = -; h FE =1-3 DESCRIPTION Complementary NPN and PNP medium power transistors packaged in the 6
BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
FMMT620 SUMMARY V CEO =80V; R SAT. = 90m ;I C = 1.5A SOT23. SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR
SuperSOT 80V NPN SILICON LOW SATURATION TRANSISTOR SUMMARY V CEO =80V; R SAT = 90m ;I C = 1.5A DESCRIPTION Enhancing the existing SuperSOT range this 80V NPN transistor utilises the Zetex matrix structure
BC856ALT1 Series. PNP Silicon. Pb Free Packages are Available. Features. MAXIMUM RATINGS (T A = 25 C unless otherwise noted)
Preferred Devices General Purpose Transistors PNP Silicon Features PbFree Packages are Available COLLECTOR MAXIMUM RATINGS ( unless otherwise noted) Rating Symbol alue Unit Collector-Emitter oltage BC856
MMBT2222AWT1G SMMBT2222AWT1G. General Purpose Transistor. NPN Silicon
MMBT2222AWTG, SMMBT2222AWTG General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT323/SC7 package which is designed
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR
120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR FCX705 SUMMARY V CEO =120V; V CE(sat) = 1.3V; I C = -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance
TIP120, 121, 122, 125, 126, 127
Features: Collector - emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126 100 V (minimum) - TIP122, TIP127 Collector - emitter saturation voltage
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
General Purpose Transistor
NPN Silicon RoHS product for packing code suffix "G", Halogen free product for packing code suffix "H". MAXIMUM RATINGS Rating Symbol 2222 2222A Unit Collector Emitter Voltage O 3 4 Vdc SOT 23 Collector
MMBT5087L. Low Noise Transistor. PNP Silicon
Low Noise Transistor PNP Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ1 Qualified and PPAP Capable These Devices are PbFree,
2N5400, 2N5401. PNP Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM THERMAL CHARACTERISTICS
Preferred Device Amplifier Transistors PNP Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol 2N5400 Unit Collector Emitter Voltage V CEO 1 1 Collector Base Voltage V CBO 1 160
2N6515, 2N6517, 2N6520. High Voltage Transistors NPN and PNP
2N6515, 2N6517, 2N65 High Voltage Transistors NPN and PNP Features Voltage and Current are Negative for PNP Transistors PbFree Package is Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N6515 2N6517
MPS5172G. General Purpose Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
General Purpose Transistor NPN Silicon Features Pb Free Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 25 Vdc Collector Base Voltage V CBO 25 Vdc Emitter
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS = -1.25A;
COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: V CEO =15V; V CE(sat) =.1V; I C = 1.5A; PNP: V CEO =-12V; V CE(sat) =-.1V; I C = -1.25A; DESCRIPTION This new combination device comprises
BC846BM3T5G. General Purpose Transistor. NPN Silicon
General Purpose Transistor NPN Silicon Moisture Sensitivity Level: ESD Rating: Human Body Model: >4 Machine Model: >4 This is a PbFree Device MAXIMUM RATINGS COLLECTOR Rating Symbol alue Unit CollectorEmitter
BC618G. Darlington Transistors. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS THERMAL CHARACTERISTICS
Darlington Transistors NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 55 Collector Base Voltage V CBO 80 EmitterBase Voltage
MUN2231, MMUN2231L, MUN5231, DTC123EE, DTC123EM3, NSBC123EF3. Digital Transistors (BRT) R1 = 2.2 k, R2 = 2.2 k
MUN, MMUNL, MUN5, DTCEE, DTCEM, NSBCEF Digital Transistors (BRT) R =. k, R =. k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single
50 Vdc Collector-Base Voltage VCEO. 50 Vdc Collector Current-Continuous VCBO. THERMAL CHARACTERISTICS Characteristics Symbol Value Unit
MMUN Series Bias Resistor Transistor NPN Silicon P b Lead(Pb)Free BASE COLLECTOR R R EMITTER SOT MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage VCEO 5 Vdc CollectorBase Voltage VCBO
MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors
MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and
ZXT12N50DX. SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 3A MSOP8
ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY V CEO =50V; R SAT = 45m ;I C = 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the
ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6. SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new 5 th generation low saturation 20V PNP transistor
Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor
NSS12200WT1G. 12 V, 2 A, Low V CE(sat) PNP Transistor. 12 VOLTS 2.0 AMPS PNP LOW V CE(sat) TRANSISTOR EQUIVALENT R DS(on) 163 m
NSS22WTG 2, 2 A, Low CE(sat) PNP Transistor ON Semiconductor s e 2 PowerEdge family of low CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage ( CE(sat) ) and
UNISONIC TECHNOLOGIES CO., LTD MMBT4401
UNISONIC TECHNOLOGIES CO., LTD MMBT441 NPN GENERAL PURPOSE AMPLIFIER 3 DESCRIPTION The UTC MMBT441 is designed for use as a medium power amplifier and switch requiring collector currents up to 5mA. 2 1
NJX1675PDR2G. Complementary 30 V, 6.0 A, Transistor. 30 VOLTS, 6.0 AMPS COMPLEMENTARY TRANSISTOR EQUIVALENT R DS(on) 80 mω
NJX67PDR2G Complementary 3, 6. A, Transistor These devices are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. Typical applications
MUN2216, MMUN2216L, MUN5216, DTC143TE, DTC143TM3, NSBC143TF3. Digital Transistors (BRT) R1 = 4.7 k, R2 = k
MUN226, MMUN226L, MUN526, DTC4TE, DTC4TM, NSBC4TF Digital Transistors (BRT) R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace
SOT-23 Mark: 1S. TA = 25 C unless otherwise noted. Symbol Parameter Value Units
C B E PN2369A TO-92 MMBT2369A C SOT-23 Mark: S B E Discrete POWER & Signal Technologies MMPQ2369 E B E B E B E B SOIC-6 C C C C C C C C This device is designed for high speed saturation switching at collector
NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR
NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)
ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m
30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV CEO = -30V : R SAT = 31m ; I C = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low
NGB8207BN - 20 A, 365 V, N-Channel Ignition IGBT, D 2 PAK
NGB8207BN - 20 A, 365, N-Channel Ignition IGBT, D 2 PAK Pb Description This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over oltage clamped protection
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) Darlington Complementary Silicon Power Transistors
BDX33B, BDX33C* (NPN) BDX34B, BDX34C* (PNP) BDX33C and BDX34C are Preferred Devices Darlington Complementary Silicon Power Transistors These devices are designed for general purpose and low speed switching
WPT2N32 WPT2N32. Descriptions. Features. Applications. Order information. Http//:
Single, PNP, -30V, -A, Power Transistor with 20V N-MOSFET Http//:www.willsemi.com Descriptions The is PNP bipolar power transistor with 20V N-MOSFET. This device is suitable for use in charging circuit
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors
MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors These devices are designed for generalpurpose amplifier and lowspeed switching motor control applications. Features Similar
MJE243 - NPN, MJE253 - PNP
Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and lowcurrent, highspeed switching applications. Features High CollectorEmitter
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
2N3055A (NPN), MJ15015 (NPN), MJ15016 (PNP) Complementary Silicon High Power Transistors
(NPN), MJ (NPN), MJ6 (PNP) MJ and MJ6 are Preferred Devices Complementary Silicon HighPower Transistors These PowerBase complementary transistors are designed for high power audio, stepping motor and other