MMUN2111LT1 SERIES. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network LESHAN RADIO COMPANY, LTD. MMUN2111LT1 Series
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1 PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. Simplifies Circuit Design Reduces Board Space Reduces Component Count The SOT-23 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die. Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel. Replace T1 with T3 in the Device Number to order the 13 inch/10,000 unit reel. MAXIMUM RATINGS (T A = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current I C 100 madc THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation T A = 25 C Derate above 25 C Thermal Resistance Junction-to-Ambient P D 246 (Note 1.) 400 (Note 2.) 1.5 (Note 1.) 2.0 (Note 2.) R θja 508 (Note 1.) 311 (Note 2.) mw C/W C/W SERIES 1 PIN 1 BASE (INPUT) 2 CASE 318, STYLE 6 SOT23 (TO236AB) R 1 R 2 PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND) MARKING DIAGRAM A6x M A6x = Device Marking x = A L(See Page 2) M = Date Code DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. 3 Thermal Resistance Junction-to-Lead R θjl 174 (Note 1.) 208 (Note 2.) C/W Junction and Storage Temperature Range 1. Minimum Pad x 1.0 inch Pad T J, T stg 55 to +150 C MMUN2111S-1/11
2 DEVICE MARKING AND RESISTOR VALUES MMUN2111LT3 Device Package Marking R1 (K) R2 (K) Shipping SOT23 A6A /Tape & Reel MMUN2112LT3 MMUN2113LT3 MMUN2114LT3 (Note 3.) MMUN2115LT3 (Note 3.) MMUN2116LT3 (Note 3.) MMUN2130LT3 (Note 3.) MMUN2131LT3 (Note 3.) MMUN2132LT3 (Note 3.) MMUN2133LT3 (Note 3.) MMUN2134LT3 SOT23 A6B /Tape & Reel SOT23 A6C /Tape & Reel SOT23 A6D /Tape & Reel SOT23 A6E /Tape & Reel SOT23 A6F /Tape & Reel SOT23 A6G /Tape & Reel SOT23 A6H /Tape & Reel SOT23 A6J /Tape & Reel SOT23 A6K /Tape & Reel SOT23 A6L /Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) OFF CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO 100 nadc Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO 500 nadc Emitter-Base Cutoff Current (V EB = 6.0 V, I C = 0 ) I EBO Collector-Base Breakdown Voltage (I C = 10 µa, I E = 0) V (BR)CBO 50 Vdc Collector-Emitter Breakdown Voltage (Note 4.) (I C = 2.0 ma, I B = 0) 3. New devices. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% madc V (BR)CEO 50 Vdc MMUN2111S2/11
3 ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 5.) DC Current Gain (V CE = 10 V, I C = 5.0 ma ) Collector-Emitter Saturation Voltage (I C = 10 ma, I E = 0.3 ma) (I C = 10 ma, I B = 5 ma) / (I C = 10 ma, I B = 1 ma) // // Output Voltage (on) (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kω ) (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kω ) Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kω) (V CC = 5.0 V, V B = 5 V, R L = 1.0 kω ) (V CC = 5.0 V, V B = V, R L = 1.0 kω ) h FE V CE(sat) 5 Vdc V OL Vdc V OH 4.9 Vdc Input Resistor R k Ω Resistor Ratio // / // R 1 /R Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% MMUN2111S3/11
4 θ Figure 1. Derating Curve Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage Figure 6. Input Voltage versus Output Current MMUN2111S4/11
5 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage Figure 11. Input Voltage versus Output Current MMUN2111S5/11
6 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage Figure 16. Input Voltage versus Output Current MMUN2111S6/11
7 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage Typical Application for PNP BRTs Figure 21. Input Voltage versus Output Current Figure 22. Inexpensive, Unregulated Current Source MMUN2111S7/11
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Type Marking Pin Configuration Package BCR08PN WFs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
BCR8PN NPN/PNP Silicon Digital Transistor Array Switching circuit, inverter, interface circuit, driver circuit Two (galvanic) internal isolated NPN/PNP Transistors in one package Built in bias resistor
BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
LM3046 Transistor Array
Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentiallyconnected
BC857BTT1G. General Purpose Transistor. PNP Silicon
General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.
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MMBT2222A APPLICATIONS WELL SUITABLE FOR PORTABLE EQUIPMENT SMALL LOAD SWITCH TRANSISTOR WITH HIGH GAIN AND LOW SATURATION OLTAGE SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking MMBT2222A M22
UNISONIC TECHNOLOGIES CO., LTD
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ZXTDE4M832. MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION
MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LO SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor V CEO = 80V; R SAT = 68m ; C = 3.5A PNP Transistor V CEO = -70V; R SAT = 117m ;
UNISONIC TECHNOLOGIES CO., LTD 2SC5305
UNISONIC TECHNOLOGIES CO., LTD 2SC535 HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In
ZXTP2008Z 30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY. BV CEO = -30V : R SAT = 24m DESCRIPTION FEATURES APPLICATIONS PINOUT
30V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BV CEO = -30V : R SAT = 24m ; I C = -5.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 30V PNP transistor offers low
ZX5T2E6 20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6. SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A
20V PNP LOW SAT MEDIUM POWER TRANSISTOR IN SOT23-6 SUMMARY BV CEO = -20V : R SAT = 31m ; I C = -3.5A DESCRIPTION Packaged in the SOT23-6 outline this new 5 th generation low saturation 20V PNP transistor
BDW93C, BDW94C Series
Features Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage- CEO (sus) = (Minimum) Collector-emitter saturation voltage- CE (sat) = 2 (Maximum)
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PN2222A ABSOLUTE MAXIMUM RATINGS SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Ordering Code Marking Package / Shipment PN2222A PN2222A TO-92 / Bulk PN2222A-AP PN2222A TO-92 / Ammopack SILICON EPITAXIAL
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[ /Title /Subject /Autho /Keyords ) /Cretor /DOCI FO dfark /Pageode /Useutines /DOC- IEW dfark Semiconductor General Purpose Transistor Arrays The CA8 and CA8A consist of four general purpose silicon NPN
MMBT2222A SMALL SIGNAL NPN TRANSISTOR
SMALL SIGNAL NPN TRANSISTOR PRELIMINARY DATA Type Marking M22 SILICON EPITAXIAL PLANAR NPN TRANSISTOR MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE & REEL PACKING THE PNP COMPLEMENTARY
ZXTP2008G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m
30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV CEO = -30V : R SAT = 31m ; I C = -5.5A DESCRIPTION Packaged in the SOT223 outline this new low saturation 30V PNP transistor offers extremely low
Darlington Transistors
Features: Designed for general-purpose amplifier and low speed switching applications Collector-emitter sustaining voltage - V CEO (sus) = 60 V (minimum) - TIP120, TIP125 80 V (minimum) - TIP121, TIP126
BCR BCR183 BCR183W BCR183S BCR183U. Type Marking Pin Configuration Package BCR183 BCR183S BCR183U SOT23 SOT363 SC74 SOT323.
BCR8... PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor (R = kω, R = kω) BCR8S / U: Two internally isolated transistors with good matching
MPSA44. High Voltage Transistor. NPN Silicon MAXIMUM RATINGS. MARKING DIAGRAM THERMAL CHARACTERISTICS ORDERING INFORMATION
Preferred Device High Voltage Transistor NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit CollectorEmitter Voltage V CEO 400 Vdc CollectorBase Voltage V CBO 500 Vdc EmitterBase Voltage V EBO 6.0 Vdc
ZX5T949G 30V PNP LOW SATURATION TRANSISTOR IN SOT223. SUMMARY BV CEO = -30V : R SAT = 31m
30V PNP LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BV CEO = -30V : R SAT = 31m ; I C = -5.5A DESCRIPTION Packaged in the SOT223 outline this new 5 th generation low saturation 30V PNP transistor offers
NJT4030P. Bipolar Power Transistors. PNP Silicon PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS
Bipolar Power Transistors PNP Silicon Features Collector -Emitter Sustaining Voltage - V CEO(sus) =(Min)@I C =madc High DC Current Gain - h FE = (Min) @ I C =.Adc = (Min) @ I C =3.Adc Low Collector -Emitter
ZXTP2014Z 140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89. SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A
140V PNP LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BV CEO = -140V : R SAT = 85m ; I C = -3A DESCRIPTION Packaged in the SOT89 outline this new low saturation 140V PNP transistor offers low
BD545, BD545A, BD545B, BD545C NPN SILICON POWER TRANSISTORS
Copyright 1997, Power Innovations Limited, UK Designed for Complementary Use with the BD546 Series 85 W at 25 C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION